Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

Abstract: A semiconductor device includes: a semiconductor substrate; a power device formed in the semiconductor substrate; a metal bilayer formed over the semiconductor substrate, the metal bilayer including a discontinuous metal layer formed on and in contact with a continuous base metal layer; and one or more contact pads formed in the metal bilayer or in a metallization layer above the metal bilayer. The discontinuous metal layer includes a plurality of metal blocks which are laterally spaced apart from one another and which form a heat sink structure over the power device. The continuous base metal layer is configured to laterally spread heat energy from the power device to the plurality of metal blocks. Methods of producing the semiconductor device are also described.

Abstract: According to various embodiments, a device may include: a semiconductor region; a metallization layer disposed over the semiconductor region; and a self-organizing barrier layer disposed between the metallization layer and the semiconductor region, wherein the self-organizing barrier layer comprises a first metal configured to be self-segregating from the metallization layer.

Abstract: A semiconductor device includes: a semiconductor substrate; a power device formed in the semiconductor substrate; a metal bilayer formed over the semiconductor substrate, the metal bilayer including a discontinuous metal layer formed on and in contact with a continuous base metal layer; and one or more contact pads formed in the metal bilayer or in a metallization layer above the metal bilayer. The discontinuous metal layer includes a plurality of metal blocks which are laterally spaced apart from one another and which form a heat sink structure over the power device. The continuous base metal layer is configured to laterally spread heat energy from the power device to the plurality of metal blocks. Methods of producing the semiconductor device are also described.

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

Abstract: An electrolyte may be provided. The electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C., and a water soluble metal salt, and the electrolyte may be free from carbon nanotubes. In various embodiments, a method of forming a metal layer may be provided: The method may include depositing a metal layer on a carrier using an electrolyte, wherein the electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C. and a water soluble metal salt, wherein the electrolyte is free from carbon nanotubes; and annealing the metal layer to form a metal layer comprising a plurality of pores. In various embodiments, a semiconductor device may be provided.

Abstract: A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.

Abstract: According to various embodiments, a device may include: a semiconductor region; a metallization layer disposed over the semiconductor region; and a self-organizing barrier layer disposed between the metallization layer and the semiconductor region, wherein the self-organizing barrier layer comprises a first metal configured to be self-segregating from the metallization layer.

Abstract: A semiconductor device includes a semiconductor chip, an electrical connection element for electrically connecting the semiconductor device to a carrier, and a metallization adjoining the electrical connection element, the metallization contains porous nanocrystalline copper that contains portions of organic acids.

Abstract: According to various embodiments, a device may include: a semiconductor region; a metallization layer disposed over the semiconductor region; and a self-organizing barrier layer disposed between the metallization layer and the semiconductor region, wherein the self-organizing barrier layer comprises a first metal configured to be self-segregating from the metallization layer.

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

Abstract: According to various embodiments, a device may include: a semiconductor region; a metallization layer disposed over the semiconductor region; and a self-organizing barrier layer disposed between the metallization layer and the semiconductor region, wherein the self-organizing barrier layer comprises a first metal configured to be self-segregating from the metallization layer.

Abstract: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.

Abstract: A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.

Abstract: One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.

Abstract: An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 ?m and a ratio of average grain size to thickness of less than 0.7.

Abstract: An electrolyte may be provided. The electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C., and a water soluble metal salt, and the electrolyte may be free from carbon nanotubes. In various embodiments, a method of forming a metal layer may be provided: The method may include depositing a metal layer on a carrier using an electrolyte, wherein the electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C. and a water soluble metal salt, wherein the electrolyte is free from carbon nanotubes; and annealing the metal layer to form a metal layer comprising a plurality of pores. In various embodiments, a semiconductor device may be provided.

Abstract: Various methods, apparatuses and devices relate to porous metal layers on a substrate which are three-dimensionally coated. In one embodiment, a porous metal layer is deposited over a substrate. The porous metal layer can be three-dimensionally coated with a coating material.

Abstract: One or more embodiments relate to a semiconductor structure, comprising: a barrier layer overlying a workpiece surface; a seed layer overlying the barrier layer; an inhibitor layer overlying said seed layer, the inhibitor layer having a opening exposing a portion of the seed layer, and a fill layer overlying the exposed portion of the seed layer.