Abstract: An optoelectronic component for data transmission with infrared radiation is described. This component integrates in a single housing an infrared transmitter, an infrared receiver and an integrated circuit for signal conditioning. owing to a particular design of the connecting legs, all of which emerge from the housing at one lateral face and are bent twice through 90° so that they extend in part parallel to this lateral face and in part to the rear side, and owing to additional protrusions on the housing in the form of supporting feet and a bearing shoulder, it is possible to process the IrDA transceiver module both in the top view and in the side view position in surface mounting technology. Assembly is performed with an accuracy that is typical for surface mount devices. No additional mounting aids are needed.

Abstract: An optical infrared transceiver for a directed bi-directional optical data transmission through the atmosphere has a stack formed of an emitter chip for transmitting IR beams, a detector chip for receiving IR beams, an integrated circuit for amplifying the transmission and reception power, and a lens aligned with the stack along an optical axis for focusing the transmitted and received beams, whereby received and transmitted beams pass through the same lens.

Abstract: An infrared transceiver for a directed bi-directional optical data transmission through the air has a single-part or multi-part housing in which a stack of components is mounted as follows: an emitter chip for transmitting IR beams, a detector chip for receiving IR beams, and an optical system with a lens and a reflector having an optical axis for focusing the transmitted and received beams. The reflector is arranged concentrically to the optical axis and relative to the components so that transmission power and reception sensitivity of the IR transceiver are increased.

Abstract: In a transceiver component for optical data transmission a transmitter, a receiver and at least one integrated circuit are arranged in a single housing. The housing has a number of terminals. One terminal of the transceiver component is provided solely for feeding the driver current to the transmitter. Consequently, it is possible to connect the transmitter with its high current consumption directly with the non-stabilized power supply such as, for instance, the mains adapter, the rechargeable battery pack or the batteries. The stabilized power supply can then be dimensioned correspondingly smaller and be produced at lower cost.

Abstract: Chip card, in particular a PCMCIA card, complete with a transceiver component for infrared data transmission, where the IR transceiver component is completely integrated into a standard connector and the external structural components--in particular the dimensions of the chip card, connector, and printed circuit board--are not altered.

Abstract: The invention relates to an opto-electronic component having a narrow aperture angle. The conventional design of components transmitting radiation or reacting to radiation and concentrating that radiation with the aid of lenses results, on account of the increasing distance between the lens and the semiconductor chip, in increasing component dimensions in the radiating or detecting direction with an increasingly narrow aperture angle. In accordance with the invention, a parabolic or approximately parabolic reflector is provided that is connected to a support strip supporting the semiconductor chip such that the latter is as close as possible to the focal point of the parabolic or approximately parabolic surface of the reflector. The reflector is preferably connected to the support strip by engaging elements and surrounded by a housing.

Abstract: The invention relates to an opto-electronic component having a narrow aperture angle. The conventional design of components transmitting radiation or reacting to radiation and concentrating that radiation with the aid of lenses results, on account of the increasing distance between the lens and the semiconductor chip, in increasing component dimensions in the radiating or detecting direction with an increasingly narrow aperture angle. In accordance with the invention, a parabolic or approximately parabolic reflector is provided that is connected to a support strip supporting the semiconductor chip such that the latter is as close as possible to the focal point of the parabolic or approximately parabolic surface of the reflector. The reflector is preferably connected to the support strip by engaging elements and surrounded by a housing.

Abstract: A semiconductor assembly with a metal frame configuration is described, having a semiconductor component (HL) on a carrier section (T) of a ground strip section (M). The ground strip segment has an extension section (V) with which it is extended beyond said carrier section and is both folded over in relation to said carrier section and of sufficient length that it covers said semiconductor component in order to shield it electromagnetically.In this assembly, the ground strip section has a multiple function. It is used not only for carrying and contacting of electrical components, but also acts at the same time as electromagnetic shielding for a semiconductor component, for example for the radiation detector of a remote control reception module.

Abstract: A method for manufacturing ohmic contacts on an n-doped semiconductor layer of a III-V compound semiconductor wherein initially an AuGe layer is formed on the n-type III-V compound semiconductor, with the thickness of the AuGe layer being between 5 and 50 nm and the germanium concentration being less than 1% by weight. An Au layer with a thickness of between 200 and 600 nm is deposited on the AuGe layer. This layer sequence is now either tempered at a temperature of approx. 360.degree.-390.degree. C. for a period between 40 and 180 minutes, or undergoes rapid thermal annealing at a temperature between 430.degree. C. and 480.degree. C. for a period of 5-20 seconds. The metal semiconductor contact manufactured in accordance with the invention is free of inhomogeneities and has predominantly even boundary surfaces.

Abstract: The invention relates to a semiconductor arrangement used in particular for the manufacture of infrared-emitting diodes. A first Si-doped GaAlAs layer containing an n-conductivity zone and a p-conductivity zone is deposited onto an n-doped GaAs semiconductor substrate. The Al content decreases continuously over the thickness of the layer. A second GaAlAs layer is deposited on the p-conductivity first zone of the first GaAlAs layer. The Al concentration of the second layer at the barrier surface with the first layer is greater than the Al concentration of the first GaAlAs layer at the barrier surface with the substrate and decreases continuously with the thickness of the second layer. The curve of the Al concentrations in the two epitaxial layers permits a light guiding effect so that the emitted radiation can, unlike conventional GaAlAs diodes, be output preferably onto those sides of the semiconductor array oriented vertically or perpendicularly to the substrate.

Abstract: The invention relates to a wide-area lamp in which luminescent semiconductor elements in a wide-area spread are connected to one another by a conducting path structure and the individual luminescent semiconductor elements are surrounded by casing elements. The invention provides for the conducting path structure between the individual casing elements to be designed movable such that the lamp can be curved to any shape required. The casing elements are here surrounded by parabolic reflectors, with the conducting path structure with the semiconductor elements being so arranged that one semiconductor element is in the focal point of each reflector.

Abstract: The invention relates to a wide-area lamp and consists of a transparent mounting plate with conducting path structure on which a large number of luminescent semiconductor elements connected to the conducting path structure are mounted in a wide-area spread. Each semiconductor element is surrounded by a reflector, with these reflectors being arranged on the mounting plate and reflecting through the mounting plate the light emitted by the semiconductor elements.

Abstract: To improve the external quantum efficiency of light-emitting diodes made from semiconductive material of III/V compounds with lattice constants heavily dependent on the respective material composition of the mixed crystal, for example in GaAsP light-emitting diodes, a thin surface layer having an increased energy band gap in relation to the covered material is arranged on the surface layer of mixed crystal containing the p-zone and being from the same mixed-crystal system, through which layer the p-zone extends, with the transition in the lattice structure between the two surface layers being abrupt.

Abstract: Optoelectronic components, in particular those comprising a line of luminescent diodes arranged in a row, are provided according to the prior art with contacts that have a number of disadvantages, some of which are that the light efficiency is relatively low and that irregularities in the light efficiency of a row occur due to incorrect adjustments of the contacts. According to the invention the contact is therefore designed as a contact bridge passing transversely over the contact window, so that on the one hand only a small amount of light-emitting surface is covered and a high light power thereby attained, and on the other hand the regularity of the light efficiency is independent of any misalignment of the contact bridge.

Abstract: A heterostructure semiconductor laser diode with a sequence of layers, formed on a substrate, including a laser-active layer arranged between enclosing layers of opposite respectively conductivity types, a cover layer disposed on the side of the sequence of layers facing away from the substrate, and a layer of a conductivity type opposite to that of the substrate arranged between the substrate and the lower enclosing layer and having in the area of the plane of symmetry, a narrow strip produced by diffusion which has the same conductivity type as the substrate and penetrates into the area of the substrate. The current flowing in the forward direction of the semiconductor laser diode is thereby restricted to a narrow strip-shaped area of the laser-active layer.

Abstract: The invention relates to a heterostructure semiconductor laser diode with a layer sequence formed on a substrate, wherein a laser-active zone is arranged between layers of respectively opposite conductivity types, wherein an additional layer having a cover layer disposed thereon, and both of the same conductivity type as the substrate, are formed on the side of the layer sequence facing away from the substrate, and wherein a semiconductor area doped oppositely to the cover layer is produced by diffusion in the cover layer and penetrates, in a strip-shaped zone extending perpendicularly to the exit surface of the laser radiation in the area of the plane of symmetry below a v-groove-shaped recess, the boundary plane between the cover layer and the adjacent additional layer and extends into but not through the layer arranged thereunder, whereby the current flowing in the forward direction of the semiconductor laser diode is confined to a narrow strip-shaped area of the laser-active layer.

Abstract: The invention relates to a heterostructure semiconductor laser diode with a layer sequence formed on a substrate, wherein the layer sequence includes a laser-active zone arranged between layers of respectively opposite conductivity types, and an additional layer and having a cover layer disposed thereon, and both of the same conductivity type as the substrate, formed on the side of the layer sequence facing away from the substrate, and wherein the cover layer includes an oppositely doped semiconductor area which, in a stripe-shaped surface region extending perpendicularly to the exit surface of the laser radiation in the area of the axis of symmetry, and through a v-groove-shaped recess penetrates, the boundary plane between the cover layer and the adjacent additional layer and extends into the layer located thereunder, whereby the current flowing in the forward direction of the semiconductor laser diode is confined to a narrow, strip-shaped area of the laser-active zone.

Abstract: A luminescent semiconductor component has a casing member of a light transmissive plastics material containing particles which simultaneously determine the light scattering and filtering properties of the light which is emitted by the semiconductor component and passes out of the casing member. The casing member may be of epoxy resin, and the particles may be of colored ground filter glass.

Abstract: The invention relates to an alloyed contact for n-conducting GaAlAs semiconductor material with a high proportion of aluminum. According to the invention, a first layer consisting of a metal from one of the subgroups IVb, Vb or VIb of the periodic table is first applied to the n-conducting semiconductor material, this layer is then covered with a second metal layer consisting of a gold germanium alloy and both layers are alloyed together.

Abstract: A data transmission system using an alternating mains supply for a signal transmission path including a movable module having a data input device, a first transmitter coupled to the data input device for transmitting a first wireless transmission of data fed into the input device, a first receiver for receiving a second wireless transmission of data and an output device coupled to the first receiver for putting out data corresponding to the received second wireless transmission.