Abstract: According to one configuration, a fabricator produces an electronic device to include: a substrate; a transistor circuit disposed on the substrate; silicide material disposed on first regions of the transistor circuit; and the silicide material absent from second regions of the transistor circuit. Absence of the silicide material over the second regions of the respective of the transistor circuit increases a resistance of one or more parasitic paths (such as one or more parasitic transistors) in the transistor circuit. The increased resistance in the one or more parasitic paths provides better protection of the transistor circuit against electro-static discharge conditions.

Abstract: A device for suppressing stray radiation includes a Micro-ElectroMechanical System (MEMS) sensor module and a conductive cage structure. The conductive cage structure may enclose the MEMS sensor module in order to suppress penetration of stray electromagnetic radiation with a stray wavelength ?o into the conductive cage structure, and the conductive cage structure may be arranged to be thermally insulated from the MEMS sensor module. The device may also include a connecting line. The connecting line may be connected to the MEMS sensor module and fed through the conductive cage structure by a capacitive element.

Abstract: A sensor circuit and a method for compensating for temperature changes are provided. In accordance with an embodiment, sensor circuit includes at least one sensor for determining a measurement variable; a heating structure; and at least one compensation circuit. The compensation circuit is configured to acquire information about a temperature change in an environment of the sensor, and to counteract a temperature change in the sensor on the basis of the information by driving the heating structure.

Abstract: According to one configuration, a fabricator produces an electronic device to include: a substrate; a transistor circuit disposed on the substrate; silicide material disposed on first regions of the transistor circuit; and the silicide material absent from second regions of the transistor circuit. Absence of the silicide material over the second regions of the respective of the transistor circuit increases a resistance of one or more parasitic paths (such as one or more parasitic transistors) in the transistor circuit. The increased resistance in the one or more parasitic paths provides better protection of the transistor circuit against electro-static discharge conditions.

Abstract: According to one embodiment, an apparatus for converting the electrical power of an electromagnetic wave into a DC electrical voltage signal is disclosed, the apparatus comprising a signal input region for receiving the electromagnetic wave, a signal output region for providing the DC electrical voltage signal, and a first conversion device, and the first conversion device comprising at least a first field-effect transistor element and a second field-effect transistor element, which is electrically coupled to the signal output region, the second field-effect transistor element being configured for series coupling to the first field-effect transistor element. According to this embodiment, the apparatus furthermore comprises at least one first capacitive element, which is electrically coupled to the signal input region, the first conversion device being configured in order to avoid at least one harmonic of the electromagnetic wave.

Abstract: A device for suppressing stray radiation includes a MEMS sensor module and a conductive cage structure. The conductive cage structure may enclose the MEMS sensor module in order to suppress penetration of stray electromagnetic radiation with a stray wavelength ?o into the conductive cage structure, and the conductive cage structure may be arranged to be thermally insulated from the MEMS sensor module. The device may also include a connecting line. The connecting line may be connected to the MEMS sensor module and fed through the conductive cage structure by a capacitive element.

Abstract: An integrated circuit device comprises at least one non-linear circuit. Further the integrated circuit device comprises a plurality of terminal circuits coupled to the non-linear circuit. Each terminal circuit comprises an associated terminal and an inductor coupled to the associated terminal and to the at least one non-linear circuit. A protective device for protection of a circuit, comprises an electro-static discharge protection element configured to be coupled to a circuit terminal and an inductor coupled to the electro-static discharge protection element and configured to be coupled to the circuit. The inductor has a low quality factor.

Abstract: In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.

Abstract: An integrated circuit device comprises at least one non-linear circuit. Further the integrated circuit device comprises a plurality of terminal circuits coupled to the non-linear circuit. Each terminal circuit comprises an associated terminal and an inductor coupled to the associated terminal and to the at least one non-linear circuit. A protective device for protection of a circuit, comprises an electro-static discharge protection element configured to be coupled to a circuit terminal and an inductor coupled to the electro-static discharge protection element and configured to be coupled to the circuit. The inductor has a low quality factor.

Abstract: A sensor circuit and a method for compensating for temperature changes are provided. In accordance with an embodiment, sensor circuit includes at least one sensor for determining a measurement variable; a heating structure; and at least one compensation circuit. The compensation circuit is configured to acquire information about a temperature change in an environment of the sensor, and to counteract a temperature change in the sensor on the basis of the information by driving the heating structure.

Abstract: A circuit includes a switching element with a first terminal, a second terminal and a control terminal. The circuit also includes an impedance network coupled between the control terminal and a switching node. The circuit also includes a first accelerating element coupled between the control terminal and a first node. The first node is different from the switching node. The circuit is configured to temporarily activate the first accelerating element when a switching state of the switching element is to be changed.

Abstract: In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.

Abstract: According to one embodiment, an apparatus for converting the electrical power of an electromagnetic wave into a DC electrical voltage signal is disclosed, the apparatus comprising a signal input region for receiving the electromagnetic wave, a signal output region for providing the DC electrical voltage signal, and a first conversion device, and the first conversion device comprising at least a first field-effect transistor element and a second field-effect transistor element, which is electrically coupled to the signal output region, the second field-effect transistor element being configured for series coupling to the first field-effect transistor element. According to this embodiment, the apparatus furthermore comprises at least one first capacitive element, which is electrically coupled to the signal input region, the first conversion device being configured in order to avoid at least one harmonic of the electromagnetic wave.

Abstract: An electronic system includes a carrier including at least one waveguide feeding, a semiconductor chip including a first surface and a second surface, and an integrated RF circuit, and a cooling element including a backshort. The semiconductor chip is mounted to the carrier such that the first surface faces the carrier. The integrated RF circuit is connected to the at least one waveguide feeding. The cooling element is mounted to the carrier such that the backshort is adjacent one end of the at least one waveguide feeding, and the cooling element at least partially covers the semiconductor chip such that the second surface of the semiconductor chip faces the cooling element.

Abstract: In accordance with an embodiment, a radio frequency integrated circuit (RFIC) includes an adjustable capacitance coupled to an input terminal of the RFIC, and a first single-pole multiple-throw (SPMT) radio frequency (RF) switch having an input coupled to the adjustable capacitance and a plurality of output nodes coupled to a corresponding plurality of second output terminals of the RFIC.

Abstract: A circuit includes a current sensing circuit comprising a current input terminal coupled to an input port, a current output terminal coupled to a transmitted port, and a current sensing output terminal configured to provide a current sensing signal proportional to a current flowing between the current input terminal and the current output terminal. The circuit further includes a voltage sensing circuit having a voltage input terminal coupled to the transmitted port and a voltage sensing output terminal configured to provide a voltage sensing signal proportional to a voltage at the transmitted port. A combining circuit has a first input coupled to the current sensing output terminal, a second input coupled to the voltage sensing output terminal, and a combined output node coupled to an output port.

Abstract: In accordance with an embodiment, a radio frequency integrated circuit (RFIC) includes an adjustable capacitance coupled to an input terminal of the RFIC, and a first single-pole multiple-throw (SPMT) radio frequency (RF) switch having an input coupled to the adjustable capacitance and a plurality of output nodes coupled to a corresponding plurality of second output terminals of the RFIC.

Abstract: An electronic system includes a carrier including at least one waveguide feeding, a semiconductor chip including a first surface and a second surface, and an integrated RF circuit, and a cooling element including a backshort. The semiconductor chip is mounted to the carrier such that the first surface faces the carrier. The integrated RF circuit is connected to the at least one waveguide feeding. The cooling element is mounted to the carrier such that the backshort is adjacent one end of the at least one waveguide feeding, and the cooling element at least partially covers the semiconductor chip such that the second surface of the semiconductor chip faces the cooling element.

Abstract: In accordance with an embodiment, a circuit includes a current sensing circuit comprising a current input terminal coupled to an input port, a current output terminal coupled to a transmitted port, and a current sensing output terminal configured to provide a current sensing signal proportional to a current flowing between the current input terminal and the current output terminal. The circuit further includes a voltage sensing circuit having a voltage input terminal coupled to the transmitted port and a voltage sensing output terminal configured to provide a voltage sensing signal proportional to a voltage at the transmitted port. A combining circuit has a first input coupled to the current sensing output terminal, a second input coupled to the voltage sensing output terminal, and a combined output node coupled to an output port.

Abstract: A circuit includes a switching element with a first terminal, a second terminal and a control terminal. The circuit also includes an impedance network coupled between the control terminal and a switching node. The circuit also includes a first accelerating element coupled between the control terminal and a first node. The first node is different from the switching node. The circuit is configured to temporarily activate the first accelerating element when a switching state of the switching element is to be changed.