Abstract: In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.

Abstract: An LED module has a carrier, which contains a semiconductor layer and has a planar main area, on which LED semiconductor bodies are applied. Use is preferably made of LED semiconductor bodies which emit light of differing central wavelengths during operation, so that the LED module is suitable for generating mixed-color light, and in particular for generating white light.

Abstract: A transmission and reception device, in which the transmission device and the reception device and the input/output end of a glass fiber are disposed optically in series with respect to one another. A laser diode is disposed on a central part of a photosensitive surface and the input/output end of the glass fiber is in turn adjusted in front of its end face. As a result of a cylindrical symmetry of the photosensitive surface and of the laser diode with respect to a fiber axis, a maxima of the coupling curves coincide with the fiber axis, so that a lateral fiber offset leads to only a moderate change in coupling efficiency.

Abstract: A white light source has a light emission device, in particular an IR laser diode, whose emitted radiation beam is converted, in a nonlinear-optical element and a conversion element, into a radiation beam with wavelengths &lgr;1, . . . &lgr;n which can be perceived as white light and can have a higher power rating.

Abstract: A polarization detector is described which contains a beam splitter, which disperses an incident light beam into partial beam paths. The partial beams pass though &lgr;/4 wafers and a cholesterol layer and impinge upon detectors. The polarization direction of the incident light beam can be measured by the polarization detector with the aid of the signal level of the detectors.

Abstract: A measuring arrangement for measuring product parameters of a component in the epitaxial layer (28) of a wafer comprises measuring probe (3) on whose contact side (23) a recess (24) is installed, into which an electrolyte can be poured. The electrolyte produces an electrical connection between a contact body (11), which is charged with a signal from a pulsed-current source, and the surface (22) of the wafer (2). A detector (16) serves for detecting the light which is emitted by the component.

Abstract: An apparatus for producing a chip-substrate connection, in particular by soldering a semiconductor chip on a substrate. The apparatus has a support, on which the substrate is temporarily supported, and a heating device which is provided for forming the chip-substrate connection. The heating device has a radiation source in the form of a laser in the infrared wavelength range. The support is formed by a heat body, which is assigned to the chip-substrate connection and is heated with thermal radiation by the radiation source. A surface of the heat body is coated with a material, in particular a material containing chromium, exhibiting high absorption with respect to the light radiation emitted by the radiation source.

Abstract: An optoelectronic sensor module is provided for recognition of reflection patterns on a magnetic data carrier. A laser component having a laser radiation axis, at least a first sensor photodetector laterally displaced relative to the laser radiation axis, electrically conducting bond pads and mutually electrically insulated conducting paths, are disposed on or in a silicon submount or cooling element. A lens configuration which is provided at a side of the laser emitter component opposite the cooling element, is fixed on the cooling element by at least one supporting web.

Abstract: An optoelectronic module for bidirectional optical data transmission has a molded element provided as a beam splitter, which consists essentially of a material that is transparent for the emitted radiation and the received radiation, and in which a beam splitter is embedded. A transmitting component, a receiving component and a radiation focusing device are advantageously directly connected to the molded element.

Abstract: An optoelectronic transmitting and/or receiving module for signal transmission through the use of an optical waveguide, includes an optoelectronic transmitting and receiving unit disposed in a housing having a support plate, a covering cap and a window. The covering cap has an optical waveguide connection device which is constructed in such a way that the optical waveguide connection device can be adjusted with respect to the optoelectronic unit prior to final fixing. A method for producing the optoelectronic transmitting and/or receiving module is also provided.

Abstract: An immersion system for a magneto-optical storage device has a spherical-segment-shaped lens. The lens is formed of material that is transparent to the electromagnetic radiation of the wavelength .lambda. at which the device is operated, and preferably of a semiconductor material. The lens has a first refractive index n.sub.1 which is greater than that of air. A layer with a higher refractive index than the lens is disposed in the propagation path of the electromagnetic radiation. The layer is composed of a material with a second refractive index n.sub.2 that is greater than the first refractive index n.sub.1 of the material of the lens.

Abstract: An LED device includes at least one LED chip having a front contact metallization disposed on a light exit surface of a light-emitting member and a rear contact metallization disposed on a side of the light-emitting member opposite the light exit surface. The LED chip is disposed between first and second conductor track supports. The first conductor track support is transparent and has at least one first electric conductor contacting the front contact metallization. The second conductor track support has at least one second electric conductor contacting the rear contact metallization. The LED device has, inter alia, the special advantage of permitting the size of the LED chips to be reduced, in contrast with the chip size in conventional LED devices, thus allowing the luminous spot density to be increased.

Abstract: A method is provided for producing at least one beam splitter molded part from transparent material in which a beam splitter layer is embedded. Two radiation-transparent wafers, of which one is provided with a beam splitter layer, are interconnected in such a way that the beam splitter layer lies between the two wafers. Subsequently, this wafer assembly is further processed to form individual prism ingots, for example by sawing them through into wafer strips and grinding or polishing lateral surfaces, or by profile sawing. An optoelectronic module for bidirectional optical data transmission uses the beam splitter molded part.

Abstract: An integrated semiconductor circuit has a component formed of a semiconductor substrate with an active pn junction formed between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The semiconductor circuit also has a protective circuit that is associated with the component and serves to dissipate overvoltages and/or electrostatic charges. The protective circuit has a protective pn junction formed in a semiconductor mount with a first semiconductor mount region of the first conductivity type and a second semiconductor mount region of the second conductivity type. The second semiconductor mount region of the second conductivity type is electrically coupled to the first semiconductor region formed in the semiconductor substrate of the first conductivity type.

Abstract: An optoelectronic transducer configuration has a radiation-emitting and/or receiving semiconductor component fastened to a carrier plate in such a way that its beam exit/entry face is directed towards the carrier plate. The carrier plate is composed of a material which is transparent to the radiation. A device for focusing the radiation is additionally disposed on the carrier plate. The optoelectronic transducer is distinguished in particular by low reflection losses and simple mounting. A multiplicity of such transducers can be fabricated as a unit and then separated.

Abstract: An optoelectric module for bidirectional optical data transmission has a molded element provided as a beam splitter, which consists essentially of a material that is transparent for the emitted radiation and the received radiation, and in which a beam splitter is embedded. A transmitting component, a receiving component and a radiation focusing device are advantageously directly connected to the molded element.