Abstract: A power semiconductor bridge circuit includes two power semiconductor components connected in series between positive and negative voltage sources. A connection between the two power semiconductor components is connected in common to an unsteady load. The connections between each power semiconductor component and a respective one of the positive and negative voltage sources includes at least two parallel-connected conductors. By reducing the current variation in each conductor, the parallel connections reduce self-induction and thereby voltage spikes due to rapid variations in the unsteady load. In one embodiment, one of the conductors connecting to the positive voltage source is arranged parallel to, and spatially proximate to, one conductor connecting to the negative source and likewise with the conductors connecting to the negative voltage source. In the latter embodiment, a further reduction in induction is obtained.

Abstract: The circuit arrangement comprises a mounting plate carrying at least one preferably chip-form component and contact surfaces electrically conductively connected to the component by connecting elements. The mounting plate is carried on a cooling member and is pressed thereagainst by a pressing arrangement. The pressing arrangement has a mounting element, with an elastically yielding cushion element on the side which is towards the cooling member, to press against the electrical component and/or in the vicinity thereof against the mounting plate in electrically insulated relationship therewith.

Abstract: A freewheeling diode device (10) for a commutation branch includes a first diode (12) with a soft recovery behavior and a second diode (14) with a snappy recovery behavior. The second diode (14) is connected in parallel to the first diode (12).

Abstract: A thyristor comprising a semiconductor body having at least four sequential layers of alternatingly opposite conductivity types. One of the layers is an emitter zone and the contiguous layer of opposite conductivity type is a base zone. A control electrode is electrically connected to the base zone and surrounded by the emitter zone. A first penetration region, including at least first and second groups of apertures in the emitter zone arranged in corresponding concentric circles of different diameters about the control electrode, permits electrical contact between the base and emitter zones. The number of apertures in each of the first and second groups is the same, and the region of the emitter zone in which the first penetration region is located is of smaller expanse than the remainder of the emitter zone.

Abstract: In a semiconductor arrangement including at least one semiconductor element composed of a semiconductor material which generates recombination radiation when current flows through the semiconductor element, and a control element disposed for monitoring the operation of the semiconductor element, the control element has an internal photoelectric effect and is disposed for receiving the recombination radiation generated in the semiconductor material for producing an output parameter representative of the intensity of such radiation.

Abstract: A method of producing semiconductor devices having high reverse blocking ability comprising initially forming grooves in at least one major surface of a semiconductor disc of a first conductivity type according to a pattern which subdivides the disc into areal sections capable of being separated into individual device-containing semiconductor wafers and then subjecting the disc to a diffusion process to provide in each section a sequence of layer type zones of different conductivities which form at least one pn-junction and with one of the layer zones being a highly resistive zone, and to provide a zone of single conductivity type passing through the entire disc in the profile region of each of the grooves. A recess is then formed in each section of the major surface which is adjacent the pn-junction which is to be stressed in the reverse direction during use of the intended device and adjacent to each of the grooves.