Abstract: This invention uses multiple pairs of electrodes acting as electrical conductivity sensors that are secured at specific locations within spiral wound membrane elements and their interconnecting components of a reverse osmosis or nanofiltration pressure vessel. Each electrode pair might be attached to a wire cord to be inserted through and sealed against a vessel end cap into the permeate carrier tubes and interconnecting components of the membrane elements, or each electrode pair might be attached to a battery and a wireless transmitting device. Conductivity measurements from the sensors would be communicated to a microprocessor, which would evaluate each permeate conductivity measurement relative to other permeate conductivity measurements, as well as relative to derived or measured conductivities in the saline water in calculating a percent salt passage value specific to the location of each permeate sensor.

Abstract: This invention is connected to the influent or effluent stream of an SDI filter holder assembly that might otherwise be applied in the manual measurement of the flow rates and times as required to calculate a silt density index. The invention is based on its ability to provide data collection external to the filter holder assembly in digitally measuring the flow rate and water temperature proceeding to or from the filter assembly and in automatically incorporating those readings into a microprocessor for calculating the silt density index and in normalizing the index value for the effects of variation in initial filter permeability and water temperature, and in minimizing the effect of increasing cake solids on the SDI value as related to the decreasing flow of water-borne solids to the filter surface.

Abstract: The present invention generally relates to systems and methods for determining and analyzing sport related activities in conjunction with low latency transmission and processing. Specifically, embodiments of the present invention utilize sensor units placed on participants in a sporting activity in order to identify actions and/or movements made by the participants and analyze those actions and/or movements. In certain embodiments, the system is further configured to transmit the analyzed data associated with those actions and/or movements such that a group of end users (e.g., broadcast viewers, users of a mobile application) can consume the data in real time or near real time.

Abstract: A plastic bag pad comprising one or more plastic bags including detachable sections, wherein the bags are connected to a plastic header. A portion of each bag may be removed from the header by ripping along a perforated line. Each bag may comprise an overlay panel. Each bag may also include a sleeve to contain a support object. The detachable section of each bag may include an coupon or sample, and each bag may include an advertisement or name.

Abstract: A method of forming sublithography gate lengths involves the steps of patterning the layer of resist above the gate stack (including a gate layer, hardmask layer and etch-control layer) to a desired gate length and etching the etch-control layer and the hardmask layer; the portion of the circuit that has the correct gate length is covered with a blocking mask and the hardmask in the remainder is wet-etched to reduce its dimension, after which the gate stack is etched using both gate lengths of hardmask to produce different gate lengths in different areas.

Abstract: Methods of fabricating metal oxide semiconductor field effect transistor (MOSFET) devices having a high dielectric constant (k greater than 7) gate insulator, low overlap capacitance (0.35 fF/&mgr;m or below) and a channel length (sub-lithographic, e.g., 0.1 &mgr;m or less) that is shorter than the lithography-defined gate lengths are provided. The methods include a damascene processing step and a chemical oxide removal (COR) step. The COR step produces a large taper on a pad oxide layer which, when combined with a high-k gate insulator, results in low overlap capacitance, sort channel lengths and better device performance as compared to MOSFET devices that are formed using conventional Complementary Metal Oxide Semiconductor (CMOS) technologies.

Abstract: Methods of fabricating metal oxide semiconductor field effect transistor (MOSFET) devices having a high dielectric constant (k greater than 7) gate insulator, low overlap capacitance (0.35 fF/&mgr;m or below) and a channel length (sub-lithographic, e.g., 0.1 &mgr;m or less) that is shorter than the lithography-defined gate lengths are provided. The methods include a damascene processing step and a chemical oxide removal (COR) step. The COR step produces a large taper on a pad oxide layer which, when combined with a high-k gate insulator, results in low overlap capacitance, sort channel lengths and better device performance as compared to MOSFET devices that are formed using conventional Complementary Metal Oxide Semiconductor (CMOS) technologies.

Abstract: Methods of fabricating metal oxide semiconductor field effect transistor (MOSFET) devices having a high dielectric constant (k greater than 7) gate insulator, low overlap capacitance (0.35 fF/&mgr;m or below) and a channel length (sub-lithographic, e.g., 0.1 &mgr;m or less) that is shorter than the lithography-defined gate lengths are provided. The methods include a damascene processing step and a chemical oxide removal (COR) step. The COR step produces a large taper on a pad oxide layer which, when combined with a high-k gate insulator, results in low overlap capacitance, sort channel lengths and better device performance as compared to MOSFET devices that are formed using conventional Complementary Metal Oxide Semiconductor (CMOS) technologies.

Abstract: Techniques to fabricate sub−0.05 &mgr;m MOSFET devices with Super-Halo doping profile which provide excellent short-channel characteristics are provided. The techniques utilize a damascene-gate process to obtain MOSFET structures with oxide thickness above the source/drain region independent of the gate-oxide thickness and a disposable-spacer technique for the formation of the Super-Halo doping profile.

Abstract: A dielectric wiring structure and method of manufacture therefor. Successively formed wiring layers synergistically combine with subsequently formed sidewall supports spanning two or more layers to form a self supporting air dielectric interconnection matrix. Wires are supported by vertical nitride sidewalls which are, in turn, held in place and supported by the wires. After forming the complete wiring-sidewall structure, SiO2 between and under the wires is removed using gaseous HF at a partial pressure between 5 and 30 Torr. The metal wires may be clad with nitride for short and oxidation protection. Because sidewalls are formed after wiring, with the wiring at each level providing support definition, complex support alignment is unnecessary.

Abstract: A dielectric wiring structure and method of manufacture therefor. Successively formed wiring layers synergistically combine with subsequently formed sidewall supports spanning two or more layers to form a self supporting air dielectric interconnection matrix. Wires are supported by vertical nitride sidewalls which are, in turn, held in place and supported by the wires. After forming the complete wiring-sidewall structure, SiO.sub.2 between and under the wires is removed using gaseous HF at a partial pressure between 5 and 30 Torr. The metal wires may be clad with nitride for short and oxidation protection. Because sidewalls are formed after wiring, with the wiring at each level providing support definition, complex support alignment is unnecessary.

Abstract: Packaging (1) for cable assemblies (2), is constructed with cable assemblies (2) in a case (3), the cable assemblies (2) being routed along an interior of the case (3), a circuit board (4) positioned by the case (3) over the cable assemblies (2), and electrical connectors (5) on ends of selected cable assemblies (2) connect to the circuit board (4).

Abstract: A film layer not susceptible to aerosol cleaning is removed from a surface by converting the film layer into a film susceptible to aerosol cleaning, and aerosol jet cleaning the converted film and any contaminants. The aerosol jet can be moved in relation to the surface to provide thorough cleaning.

Abstract: An improved tensioning device is provided for use in an inner diameter saw blade housing. A tensioning ring, disposed in an annular clamping member, is internally threaded at plurality of locations along its circumference. An associated plurality of screws, disposed in cylindrical recesses in the clamping member, threadedly engage the internal threads. The screws may be turned through an opening in the clamping member having a diameter smaller than the screw to thereby precisely tension the blade as desired. Since the screws are captive within the clamping member, migration of the tensioning ring relative to the blade is prevented. Further, the screws do not protrude from the surface of the clamping member and the threaded portions of the screws are closed off from the ambient such that foreign matter cannot enter the clamping member and interfere with the tensioning process.