Patents by Inventor Wesley Grant

Wesley Grant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing CCDS in a conventional CMOS process
    Publication number: 20070161148
    Abstract: A technique for forming Charge-Coupled Devices (CCDS) in a conventional Complementary Metal Oxide Semiconductor (CMOS) process. A number of single-layer polysilicon gates are formed on an as-grown, native doped silicon substrate, with gaps between them. Masking is used to selectively dope the gates while preventing doping of the silicon in the gaps. Masking may likewise be used to selectively silicide the gates while preventing silicide formation in the gaps. Conventional source-drain processing produces input/output diffusions for the CCD.
    Type: Application
    Filed: February 20, 2007
    Publication date: July 12, 2007
    Inventors: Gerhard Sollner, Lawrence Kushner, Michael Anthony, Edward Kohler, Wesley Grant
  • Manufacturing CCDs in a conventional CMOS process
    Patent number: 7179676
    Abstract: A technique for forming Charge-Coupled Devices (CCDs) in a conventional Complementary Metal Oxide Semiconductor (CMOS) process. A number of single-layer polysilicon gates are formed on an as-grown, native doped silicon substrate, with gaps between them. Masking is used to selectively dope the gates while preventing doping of the silicon in the gaps. Masking may likewise be used to selectively silicide the gates while preventing silicide formation in the gaps. Conventional source-drain processing produces input/output diffusions for the CCD.
    Type: Grant
    Filed: March 28, 2005
    Date of Patent: February 20, 2007
    Assignee: Kenet, Inc.
    Inventors: Gerhard Sollner, Lawrence J. Kushner, Michael P. Anthony, Edward Kohler, Wesley Grant
  • Manufacturing CCDs in a conventional CMOS process
    Publication number: 20060216871
    Abstract: A technique for forming Charge-Coupled Devices (CCDs) in a conventional Complementary Metal Oxide Semiconductor (CMOS) process. A number of single-layer polysilicon gates are formed on an as-grown, native doped silicon substrate, with gaps between them. Masking is used to selectively dope the gates while preventing doping of the silicon in the gaps. Masking may likewise be used to selectively silicide the gates while preventing silicide formation in the gaps. Conventional source-drain processing produces input/output diffusions for the CCD.
    Type: Application
    Filed: March 28, 2005
    Publication date: September 28, 2006
    Applicant: Kenet, Inc.
    Inventors: Gerhard Sollner, Lawrence Kushner, Michael Anthony, Edward Kohler, Wesley Grant