Patents by Inventor Wesley S. Hackenberger
Wesley S. Hackenberger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11486055Abstract: A relaxor-PT based piezoelectric crystal is disclosed, comprising the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI?,MII?)z]1-yTiy}O3, wherein: M is a rare earth cation; MI is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, and In3+; MII is Nb5+; MI? is selected from the group consisting of Mg2+, Zn2+, Yb3+, Sc3+, In3+, and Zr4; MII? is Nb5+ or Zr4+; 0<x?0.05; 0.02<y<0.7; and 0?z?1, provided that if either MI? or MII? is Zr4+, both MI? and MII? are Zr4+. A method for forming the relaxor-PT based piezoelectric crystal is disclosed, comprising pre-synthesizing precursor materials by calcining mixed oxides, mixing the precursor materials with single oxides and calcining to form a feeding material, and growing the relaxor-PT based piezoelectric crystal having the general formula of (Pb1-1.5xMx){[(MI,MII)1-z(MI?,MII?)z]1-yTiy}O3 from the feeding material by a Bridgman method.Type: GrantFiled: August 31, 2018Date of Patent: November 1, 2022Assignees: TRS TECHNOLOGIES, INC., THE PENN STATE RESEARCH FOUNDATIONInventors: Jun Luo, Wesley S. Hackenberger, Fei Li, Shujun Zhang, Thomas R. Shrout
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Patent number: 9673380Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.Type: GrantFiled: November 24, 2014Date of Patent: June 6, 2017Inventors: Wesley S. Hackenberger, Jun Luo, Shujun Zhang, Fei Li, Thomas R. Shrout, Kevin A. Snook, Raffi Sahul
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Patent number: 9070865Abstract: A transducer is disclosed that includes a multiply resonant composite, the composite having a resonator bar of a piezoelectric single crystal configured in a d32 transverse length-extensional resonance mode having a crystallographic orientation set such that the thickness axis is in the <110> family and resonance direction is the <001> family.Type: GrantFiled: October 19, 2012Date of Patent: June 30, 2015Inventors: Kevin A. Snook, Yu Liang, Jun Luo, Wesley S. Hackenberger, Raffi Sahul
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Patent number: 8907546Abstract: The application is directed to piezoelectric single crystals having shear piezoelectric coefficients with enhanced temperature and/or electric field stability. These piezoelectric single crystal may be used, among other things, for vibration sensors as well as low frequency, compact sonar transducers with improved and/or enhanced performance.Type: GrantFiled: August 10, 2011Date of Patent: December 9, 2014Inventors: Wesley S. Hackenberger, Jun Luo, Thomas R. Shrout, Kevin A. Snook, Shujun Zhang, Fei Li, Raffi Sahul
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Patent number: 8894765Abstract: A PIN-PMN-PT ferroelectric single crystal and a method of manufacture are disclosed. The PIN-PMN-PT ferroelectric single crystal is oriented and polarized along a single crystallographic direction. The PIN-PMN-PT ferroelectric single crystal ferroelectric has increased remnant polarization.Type: GrantFiled: November 12, 2010Date of Patent: November 25, 2014Assignee: TRS Technologies, Inc.Inventors: Wesley S. Hackenberger, Edward F. Alberta
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Patent number: 8821748Abstract: A ceramic or single crystal ferroelectric and a method of manufacture are disclosed. The ceramics and single crystals of the present disclosure are located near phase boundaries between ferroelectric and antiferroelectric phases. These ceramics, single crystals, and composite may be used in pulsed power applications.Type: GrantFiled: November 12, 2010Date of Patent: September 2, 2014Assignee: TRS Technologies, Inc.Inventors: Wesley S. Hackenberger, Edward F. Alberta
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Patent number: 8241519Abstract: A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.Type: GrantFiled: March 16, 2010Date of Patent: August 14, 2012Assignees: TRS Technologies, Inc., Penn State Research FoundationInventors: Jun Luo, Wesley S. Hackenberger, Shujun Zhang, Richard J. Meyer, Jr., Thomas R. Shrout, Nevin P. Sherlock
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Patent number: 8148877Abstract: A piezoelectric composite micromachined ultrasound transducer including single and multilayer 1-D and 2-D arrays having through-wafer-vias (TWVs) that significantly decreased electrical impedance per element, and hence the improved electrical impedance matching to T/R electronics and improved signal to noise ratio is disclosed. The TWVs facilitate integrated interconnection in single element transducers (positive and negative contact on the same side) and array transducers (contact pads array for integration with T/R switches and/or pre-amplifier circuits).Type: GrantFiled: April 8, 2011Date of Patent: April 3, 2012Assignee: TRS Technologies, Inc.Inventors: Xiaoning Jiang, Wesley S. Hackenberger, Kevin A. Snook
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Patent number: 8008842Abstract: A piezoelectric composite micromachined ultrasound transducer including single and multilayer 1-D and 2-D arrays having through-wafer-vias (TWVs) that significantly decreased electrical impedance per element, and hence the improved electrical impedance matching to T/R electronics and improved signal to noise ratio is disclosed. The TWVs facilitate integrated interconnection in single element transducers (positive and negative contact on the same side) and array transducers (contact pads array for integration with T/R switches and/or pre-amplifier circuits).Type: GrantFiled: October 27, 2008Date of Patent: August 30, 2011Assignee: TRS Technologies, Inc.Inventors: Xiaoning Jiang, Wesley S. Hackenberger, Kevin A. Snook
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Patent number: 7972527Abstract: A ternary single crystal relaxor piezoelectric grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.Type: GrantFiled: January 31, 2008Date of Patent: July 5, 2011Assignee: TRS Technologies, Inc.Inventors: Jun Luo, Wesley S. Hackenberger
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Patent number: 7969073Abstract: A tangentially poled piezoelectric single crystal ring resonator is disclosed. A single crystal material is machined into elements and formed into a ring structure. The single crystal elements have a <110> poled tangential axis. The elements may also have a <211>, <511> or <322> orientation range in the radial direction. The elements may have a generally wedge shape.Type: GrantFiled: December 18, 2008Date of Patent: June 28, 2011Assignee: TRS Technologies, Inc.Inventors: Wesley S. Hackenberger, Kevin A. Snook
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Patent number: 7884042Abstract: An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.Type: GrantFiled: July 16, 2010Date of Patent: February 8, 2011Assignee: TRS Technologies, Inc.Inventors: Wesley S. Hackenberger, Seongtae Kwon
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Patent number: 7781358Abstract: An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.Type: GrantFiled: February 15, 2008Date of Patent: August 24, 2010Assignee: TRS Technologies, Inc.Inventors: Wesley S. Hackenberger, Seongtae Kwon
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Publication number: 20100076318Abstract: The present invention generally relates to medical devices, and more particularly to an improved medical imaging device. In one embodiment, an imaging device includes a drive shaft having proximal and distal ends received within the lumen; and an imaging transducer assembly. coupled to the distal end of the drive shaft and positioned at the distal portion of the elongate member. The imaging transducer assembly includes one or more imaging transducers formed with a piezoelectric composite plate using photolithography based micromachining.Type: ApplicationFiled: October 29, 2009Publication date: March 25, 2010Applicant: SciMed Life Systems, Inc.Inventors: Paul W. Rehrig, Xiaoning Jiang, Wesley S. Hackenberger, Jian R. Yuan, Richard Romley
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Patent number: 7622853Abstract: The present invention generally relates to medical devices, and more particularly to an improved medical imaging device. In one embodiment, an imaging device includes a drive shaft having proximal and distal ends received within the lumen; and an imaging transducer assembly coupled to the distal end of the drive shaft and positioned at the distal portion of the elongate member. The imaging transducer assembly includes one or more imaging transducers formed with a piezoelectric composite plate using photolithography based micromachining.Type: GrantFiled: August 12, 2005Date of Patent: November 24, 2009Assignee: SciMed Life Systems, Inc.Inventors: Paul W. Rehrig, Xiaoning Jiang, Wesley S. Hackenberger, Jian R. Yuan, Richard Romley
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Publication number: 20090029295Abstract: The present invention generally relates to medical devices, and more particularly to an improved medical imaging device. In one embodiment, an imaging device includes a drive shaft having proximal and distal ends received within the lumen; and an imaging transducer assembly coupled to the distal end of the drive shaft and positioned at the distal portion of the elongate member. The imaging transducer assembly includes one or more imaging transducers formed with a piezoelectric composite plate using photolithography based micromachining.Type: ApplicationFiled: October 6, 2008Publication date: January 29, 2009Inventors: Paul W. Rehrig, Xiaoning Jiang, Wesley S. Hackenberger
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Patent number: 7446459Abstract: A hybrid piezoelectric energy harvesting transducer system includes: (a) first and second symmetric, pre-curved piezoelectric elements mounted separately on a frame so that their concave major surfaces are positioned opposite to each other; and (b) a linear piezoelectric element mounted separately on the frame and positioned between the pre-curved piezoelectric elements. The pre-curved piezoelectric elements and the linear piezoelectric element are spaced from one another and communicate with energy harvesting circuitry having contact points on the frame. The hybrid piezoelectric energy harvesting transducer system has a higher electromechanical energy conversion efficiency than any known piezoelectric transducer.Type: GrantFiled: July 13, 2006Date of Patent: November 4, 2008Assignees: National Institute of Aerospace Associates, The United States of America as represented by the Administrator of NASAInventors: Tian-Bing Xu, Xiaoning Jiang, Ji Su, Paul W. Rehrig, Wesley S. Hackenberger
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Publication number: 20080238260Abstract: A hybrid piezoelectric energy harvesting transducer system includes: (a) first and second symmetric, pre-curved piezoelectric elements mounted separately on a frame so that their concave major surfaces are positioned opposite to each other; and (b) a linear piezoelectric element mounted separately on the frame and positioned between the pre-curved piezoelectric elements. The pre-curved piezoelectric elements and the linear piezoelectric element are spaced from one another and communicate with energy harvesting circuitry having contact points on the frame. The hybrid piezoelectric energy harvesting transducer system has a higher electromechanical energy conversion efficiency than any known piezoelectric transducer.Type: ApplicationFiled: July 13, 2006Publication date: October 2, 2008Applicants: National Institute of Aerospace AssociatesInventors: Tian-Bing Xu, Xiaoning Jiang, Ji Su, Paul W. Rehrig, Wesley S. Hackenberger
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Patent number: 6034015Abstract: A composition of Ba.sub.2 Ti.sub.9 O.sub.20 suitable for use in microwave wireless communications is provided. Ba.sub.2 Ti.sub.9 O.sub.20 doped with Zr is formed by combining starting materials containing barium, titanium and zirconium. In a preferred embodiment of the invention, zirconium-doped Ba.sub.2 Ti.sub.9 O.sub.20 is formed by combining BaCO.sub.3 and TiO.sub.2, and substituting an appropriate amount of ZrO.sub.2 for a portion of the TiO.sub.2. The relative proportion of Ba.sub.2 Ti.sub.9 O.sub.20 obtained as a result is increased over that which may be obtained using other dopants, such as tin (Sn). Forming Ba.sub.2 Ti.sub.9 O.sub.20 with a Zr dopant in the appropriate amount also results in greater stability of the dielectric constant, an increase in the quality factor, and a decrease in the temperature coefficient than exhibited by other compositions of Ba.sub.2 Ti.sub.9 O.sub.20 that lack a Zr dopant.Type: GrantFiled: May 14, 1998Date of Patent: March 7, 2000Assignee: Georgia Tech Research CorporationInventors: Wen-Yi Lin, Robert F. Speyer, Tom R. Shrout, Wesley S. Hackenberger