Abstract: Methods and systems for photomask defect dispositioning are provided. One method includes directing energy to a photomask and detecting energy from the photomask. The photomask is configured for use at one or more extreme ultraviolet wavelengths of light. The method also includes detecting defects on the photomask based on the detected energy. In addition, the method includes generating charged particle beam images of the photomask at locations of the detected defects. The method further includes dispositioning the detected defects based on the charged particle beam images generated for the detected defects.

Abstract: Methods and systems for photomask defect dispositioning are provided. One method includes directing energy to a photomask and detecting energy from the photomask. The photornask is configured for use at one or more extreme ultraviolet wavelengths of light. The method also includes detecting defects on the photomask based on the detected energy. In addition, the method includes generating charged particle beam images of the photomask at locations of the detected defects. The method further includes dispositioning the detected defects based on the charged particle beam images generated for the detected defects.

Abstract: Disclosed are methods and systems for inspecting photolithographic reticles. A first and second reticle that were fabricated with a same design are obtained. A first and second reticle image of the first and second reticles are also obtained. The first reticle image is compared to the second reticle image to output a difference image having a plurality of difference events corresponding to candidate defects on either the first or second reticle. An inspection report of the candidate defects is then generated.

Abstract: Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.

Abstract: Disclosed are methods and systems for inspecting photolithographic reticles. A first and second reticle that were fabricated with a same design are obtained. A first and second reticle image of the first and second reticles are also obtained. The first reticle image is compared to the second reticle image to output a difference image having a plurality of difference events corresponding to candidate defects on either the first or second reticle. An inspection report of the candidate defects is then generated.

Abstract: Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.

Abstract: Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.

Abstract: Methods and systems for integrated multi-pass reticle inspection are provided. One method for inspecting a reticle includes acquiring at least first, second, and third images for the reticle. The first image is a substantially high resolution image of light transmitted by the reticle. The second image is a substantially high resolution image of light reflected from the reticle. The third image is an image of light transmitted by the reticle that is acquired with a substantially low numerical aperture. The method also includes detecting defects on the reticle using at least the first, second, and third images for the reticle in combination.

Abstract: Methods and systems for integrated multi-pass reticle inspection are provided. One method for inspecting a reticle includes acquiring at least first, second, and third images for the reticle. The first image is a substantially high resolution image of light transmitted by the reticle. The second image is a substantially high resolution image of light reflected from the reticle. The third image is an image of light transmitted by the reticle that is acquired with a substantially low numerical aperture. The method also includes detecting defects on the reticle using at least the first, second, and third images for the reticle in combination.

Abstract: Methods and systems for integrated multi-pass reticle inspection are provided. One method for inspecting a reticle includes acquiring at least first, second, and third images for the reticle. The first image is a substantially high resolution image of light transmitted by the reticle. The second image is a substantially high resolution image of light reflected from the reticle. The third image is an image of light transmitted by the reticle that is acquired with a substantially low numerical aperture. The method also includes detecting defects on the reticle using at least the first, second, and third images for the reticle in combination.

Abstract: Disclosed are methods and apparatus for detecting defects in a semiconductor sample having a plurality of identically designed areas. An inspection tool is used to construct an initial focus trajectory for a first swath of the sample. The inspection tool is then used to scan the first swath by following the initial focus trajectory for the first swath while collecting autofocus data. A z offset measurement vector for each identically designed area in the first swath is generated based on the autofocus data. A corrected z offset vector is constructed for inspection of the first swath with the inspection tool. Constructing the corrected z offset vector is based on combining the z offset measurement vectors for two or more of the identically designed areas in the first swath so that the corrected z offset vector specifies a same z offset for each set of same positions in the two or more identically designed areas.

Abstract: Disclosed are methods and apparatus for facilitating an inspection of a sample using an inspection tool. An inspection tool is used to obtain an image or signal from an EUV reticle that specifies an intensity variation across the EUV reticle, and this intensity variation is converted to a CD variation that removes a flare correction CD variation so as to generate a critical dimension uniformity (CDU) map without the flare correction CD variation. This removed flare correction CD variation originates from design data for fabricating the EUV reticle, and such flare correction CD variation is generally designed to compensate for flare differences that are present across a field of view (FOV) of a photolithography tool during a photolithography process. The CDU map is stored in one or more memory devices and/or displayed on a display device, for example, of the inspection tool or a photolithography system.

Abstract: Disclosed are methods and apparatus for detecting defects in a semiconductor sample having a plurality of identically designed areas. An inspection tool is used to construct an initial focus trajectory for a first swath of the sample. The inspection tool is then used to scan the first swath by following the initial focus trajectory for the first swath while collecting autofocus data. A z offset measurement vector for each identically designed area in the first swath is generated based on the autofocus data. A corrected z offset vector is constructed for inspection of the first swath with the inspection tool. Constructing the corrected z offset vector is based on combining the z offset measurement vectors for two or more of the identically designed areas in the first swath so that the corrected z offset vector specifies a same z offset for each set of same positions in the two or more identically designed areas.

Abstract: A method for calibration of a substrate inspection tool is disclosed. The tool is used to inspect a standard substrate having simulated contamination defects with known characteristics. Performance of the tool in detecting the simulated contamination defects is determined. The tool exposes the standard substrate and simulated contamination defects to radiation having a wavelength of about 260 nanometers or less. The simulated contamination defects are stable over time under exposure to radiation having a wavelength of about 260 nanometers or less.