Abstract: A silicon solar cell including a carbon nanotube layer is provided. The carbon nanotube layer is disposed on at least one of front and back surfaces of a p-n junction silicon substrate which includes a p-type silicon layer and an n-type silicon layer. Accordingly, the intensity of the electric field applied to devices may be increased due to introduction of the carbon nanotube layer, resulting in improved photoelectric conversion efficiency.

Abstract: A carbon nanotube manufacturing method is provided. In the carbon nanotube manufacturing method, carbon nanoparticles are dispersed in a strong acid solution and heated at a predetermined temperature under reflux to form carbon nanotubes from the carbon nanoparticles. The carbon nanotubes can be simply produced on a mass-scale at low costs by using the strong acid solution.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

Abstract: A carbon nanotube manufacturing method is provided. In the carbon nanotube manufacturing method, carbon nanoparticles are dispersed in a strong acid solution and heated at a predetermined temperature under reflux to form carbon nanotubes from the carbon nanoparticles. The carbon nanotubes can be simply produced on a mass-scale at low costs by using the strong acid solution.

Abstract: A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.

Abstract: A method for etching a layer of a microelectronic structure includes the steps of masking the layer to be etched so that predetermined portions of the layer are exposed, and providing an etching gas. An additional gas is also provided wherein the additional gas generates a compound having a carbene structure when exposed to a plasma discharge. A plasma of the etching gas and the additional gas is generated to thereby etch the exposed portions of the layer and to form the compound having a carbene structure. A polymer can thus be formed from the compound having the carbene structure on the sidewalls of the etched portions of the layer. Accordingly, the profile of the etched layer can be improved.