Abstract: A semiconductor device having a trench in the side portion of a conducting line pattern and methods of forming the same. The semiconductor device provides a way of preventing an electrical short between the conducting line pattern and a landing pad adjacent to the conducting line pattern. There are disposed two conducting line patterns on a semiconductor substrate. Each of the conducting line patterns includes a conducting line and a conducting line capping layer pattern stacked thereon. Each of the conducting line patterns has a trench between the conducting line capping layer pattern and the conducting line. Conducting line spacers are formed between the conducting line patterns. One conducting line spacer covers a portion of a sidewall of one of the conducting line patterns, and the remaining conducting line spacer covers an entire sidewall of the remaining conducting line pattern. A landing pad is disposed between the conducting line patterns.

Abstract: A semiconductor device having a trench in the side portion of a conducting line pattern and methods of forming the same. The semiconductor device provides a way of preventing an electrical short between the conducting line pattern and a landing pad adjacent to the conducting line pattern. There are disposed two conducting line patterns on a semiconductor substrate. Each of the conducting line patterns includes a conducting line and a conducting line capping layer pattern stacked thereon. Each of the conducting line patterns has a trench between the conducting line capping layer pattern and the conducting line. Conducting line spacers are formed between the conducting line patterns. One conducting line spacer covers a portion of a sidewall of one of the conducting line patterns, and the remaining conducting line spacer covers an entire sidewall of the remaining conducting line pattern. A landing pad is disposed between the conducting line patterns.

Abstract: A semiconductor device having a trench in the side portion of a conducting line pattern and methods of forming the same. The semiconductor device provides a way of preventing an electrical short between the conducting line pattern and a landing pad adjacent to the conducting line pattern. There are disposed two conducting line patterns on a semiconductor substrate. Each of the conducting line patterns includes a conducting line and a conducting line capping layer pattern stacked thereon. Each of the conducting line patterns has a trench between the conducting line capping layer pattern and the conducting line. Conducting line spacers are formed between the conducting line patterns. One conducting line spacer covers a portion of a sidewall of one of the conducting line patterns, and the remaining conducting line spacer covers an entire sidewall of the remaining conducting line pattern. A landing pad is disposed between the conducting line patterns.

Abstract: A semiconductor device having a trench in the side portion of a conducting line pattern and methods of forming the same. The semiconductor device provides a way of preventing an electrical short between the conducting line pattern and a landing pad adjacent to the conducting line pattern. There are disposed two conducting line patterns on a semiconductor substrate. Each of the conducting line patterns includes a conducting line and a conducting line capping layer pattern stacked thereon. Each of the conducting line patterns has a trench between the conducting line capping layer pattern and the conducting line. Conducting line spacers are formed between the conducting line patterns. One conducting line spacer covers a portion of a sidewall of one of the conducting line patterns, and the remaining conducting line spacer covers an entire sidewall of the remaining conducting line pattern. A landing pad is disposed between the conducting line patterns.