Abstract: A system and method for transmitting seamless wireless data in real time are disclosed. The system includes a transmission device for transmitting wireless data to a reception device in real time. The transmission device includes a packet transmission unit, a communication efficiency detection unit, and a transmission cycle adjustment unit. The packet transmission unit transmits a data packet to the reception device. The communication efficiency detection unit detects communication efficiency of the packet transmission. The transmission cycle adjustment unit adjusts a cycle of the packet transmission according to the detected communication efficiency.

Abstract: A system and method for transmitting seamless wireless data in real time are disclosed. The system includes a transmission device for transmitting wireless data to a reception device in real time. The transmission device includes a packet transmission unit, a communication efficiency detection unit, and a transmission cycle adjustment unit. The packet transmission unit transmits a data packet to the reception device. The communication efficiency detection unit detects communication efficiency of the packet transmission. The transmission cycle adjustment unit adjusts a cycle of the packet transmission according to the detected communication efficiency.

Abstract: A complementary metal oxide semiconductor image sensor and a method for fabricating the same are disclosed, wherein a width of a depletion area of a photodiode is varied by variably applying a back bias voltage to a semiconductor substrate without using any color filter, thereby preventing a back bias voltage from influencing a transistor formed on the outside of a photodiode in a CMOS image sensor sensing optical color sensitivity of light rays irradiated to the photodiode.

Abstract: A CMOS image sensor and a method for detecting color sensitivity of red, green and blue light without using a color filter layer is disclosed, which includes a semiconductor substrate having an active region; a photodiode formed in the active region of the semiconductor substrate, and generating an optical electric charge in accordance with irradiation of light; an insulating interlayer formed on an entire surface of the semiconductor substrate; and a micro lens formed on the insulating interlayer in perpendicular to the photodiode, wherein, a back-bias voltage is applied to the semiconductor substrate to vary a width of a depletion area of the photodiode.