Patents by Inventor Wickramanayaka Sunil

Wickramanayaka Sunil has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing a metal gate on a high-k dielectric film
    Patent number: 7655549
    Abstract: A method to improve a high-k dielectric film and metal gate interface in the fabrication of a MOSFET by depositing a metal gate on a high-k dielectric, the method includes annealing a substrate with a high-k dielectric film deposited thereon in a thermal annealing module and depositing a metal gate material on the annealed substrate in a metal gate deposition module, wherein the annealing step and the depositing step are carried out consecutively without a vacuum break.
    Type: Grant
    Filed: February 6, 2006
    Date of Patent: February 2, 2010
    Assignee: Canon Anelva Corporation
    Inventors: Wickramanayaka Sunil, Motomu Kosuda, Naoki Yamada, Naomu Kitano
  • SUBSTRATE TREATING SYSTEM FOR DEPOSITING A METAL GATE ON A HIGH-K DIELECTRIC FILM AND IMPROVING HIGH-K DIELECTRIC FILM AND METAL GATE INTERFACE
    Publication number: 20090178621
    Abstract: An apparatus to improve high-k dielectric film and metal gate interface in the fabrication of MOSFET by depositing a metal gate on a high-k dielectric comprising an annealing step annealing a substrate with high-k dielectric film deposited thereon in a thermal annealing module and a depositing step depositing a metal gate material on said annealed substrate in a metal gate deposition module, characterized that said annealing step and depositing step are carried out consecutively without a vacuum break.
    Type: Application
    Filed: March 9, 2009
    Publication date: July 16, 2009
    Applicant: CANON ANELVA CORPORATION
    Inventors: Wickramanayaka Sunil, Motomu Kosuda, Naoki Yamada, Naomu Kitano
  • Method for depositing a metal gate on a high-k dielectric film and improving high-k dielectric film and metal gate interface, and a substrate treating system
    Publication number: 20060194396
    Abstract: A method to improve a high-k dielectric film and metal gate interface in the fabrication of a MOSFET by depositing a metal gate on a high-k dielectric, the method includes annealing a substrate with a high-k dielectric film deposited thereon in a thermal annealing module and depositing a metal gate material on the annealed substrate in a metal gate deposition module, wherein the annealing step and the depositing step are carried out consecutively without a vacuum break.
    Type: Application
    Filed: February 6, 2006
    Publication date: August 31, 2006
    Applicant: CANON ANELVA CORPORATION
    Inventors: Wickramanayaka Sunil, Motomu Kosuda, Naoki Yamada, Naomu Kitano