Patents by Inventor Wie NI

Wie NI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190341486
    Abstract: A semiconductor device includes: a substrate; a drift region formed on a main surface of the substrate; a well region formed in a main surface of the drift region; a source region formed in the well region; a gate groove formed from the main surface of the drift region in a perpendicular direction while being in contact with the source region, the well region, and the drift region; a drain region formed in the main surface of the drift region; a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween; a protection region formed on a surface of the gate insulating film facing the drain region; and a connection region formed in contact with the well region and the protection region.
    Type: Application
    Filed: May 30, 2016
    Publication date: November 7, 2019
    Applicant: NISSAN MOTOR CO.,LTD.
    Inventors: Wie NI, Tetsuya HAYASHI, Yasuaki HAYAMI, Ryota TANAKA