Patents by Inventor Wil-Liam Jo

Wil-Liam Jo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change memory device having phase change material layer containing phase change nano particles
    Patent number: 8049202
    Abstract: A phase change memory device including a phase change material layer having phase change nano particles and a method of fabricating the same are provided. The phase change memory device may include a first electrode and a second electrode facing each other, a phase change material layer containing phase change nano particles interposed between the first electrode and the second electrode and/or a switching device electrically connected to the first electrode. The phase change material layer may include an insulating material.
    Type: Grant
    Filed: March 6, 2009
    Date of Patent: November 1, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoon-Ho Khang, Wil-Liam Jo, Dong-Seok Suh
  • Phase change memory device having phase change material layer containing phase change nano particles and method of fabricating the same
    Publication number: 20090278108
    Abstract: A phase change memory device including a phase change material layer having phase change nano particles and a method of fabricating the same are provided. The phase change memory device may include a first electrode and a second electrode facing each other, a phase change material layer containing phase change nano particles interposed between the first electrode and the second electrode and/or a switching device electrically connected to the first electrode. The phase change material layer may include an insulating material.
    Type: Application
    Filed: March 6, 2009
    Publication date: November 12, 2009
    Inventors: Yoon-Ho Khang, Wil-Liam Jo, Dong-Seok Suh
  • Phase change memory device having phase change material layer containing phase change nano particles and method of fabricating the same
    Publication number: 20060121391
    Abstract: A phase change memory device including a phase change material layer having phase change nano particles and a method of fabricating the same are provided. The phase change memory device may include a first electrode and a second electrode facing each other, a phase change material layer containing phase change nano particles interposed between the first electrode and the second electrode and/or a switching device electrically connected to the first electrode.
    Type: Application
    Filed: December 2, 2005
    Publication date: June 8, 2006
    Inventors: Yoon-Ho Khang, Wil-Liam Jo, Dong-Seok Suh