Abstract: The invention is an optical waveguide device and a method for forming the device which provides enhanced stability. The device includes a pyroelectric substrate such as lithium niobate where the bulk resistivity of at least a portion of the substrate is reduced to 1013 ohm cm or less by heating the substrate in a reducing atmosphere. This causes the substrate to be less susceptible to temperature variants which can otherwise result in dc bias drift and variation.

Abstract: It has been found that through the use of ferrocene or iron pentacarbonyl based compounds, it is possible to produce semi-insulating epitaxial layers of indium phosphide-based compounds by an MOCVD process. Resistivities up to 1×109 ohm-cm have been achieved as compared to resistivities on the order of 5×103 ohm-cm for other types of semi-insulating epitaxial indium phosphide.

Abstract: An integrated laser/modulator (“ILM”) operating with reduced chirping is formed on a single semiconductor substrate. A reduction in chirping and any resultant wavelength dispersion is realized by precisely controlling the length of a window region incorporated in the ILM in order to isolate the ILM's active regions from any residual reflections.

Abstract: An integrated laser/modulator ("ILM") operating with reduced chirping is formed on a single semiconductor substrate. A reduction in chirping and any resultant wavelength dispersion is realized by precisely controlling the length of a window region incorporated in the ILM in order to isolate the ILM's active regions from any residual reflections.

Abstract: The invention is a photodetector device and a lightguide circuit incorporating the device. The photodetector device includes a semiconductor region for absorbing light which is incident on an edge surface of the device. The region above the absorbing region is narrow at the edge and fans out in the direction of light propagation in the device.

Abstract: It has been discovered that plastic deformation of a wafer of light-emitting semiconductor material during processing creates areas of poor radiative efficiency known as large dark spot (LDS) defects. An improved technique for lapping is described which alleviates stress and substantially reduces the initiation and propagation of such defects. Conventionally, wafers are affixed to a mounting plate by coating the plate with wax or some other appropriate adhesive and then applying pressure. The improvement comprises interposing a spacer between the mounting plate and the wafer. The spacer is capable of accommodating surface irregularities and particulates while maintaining substrate planarity.

Abstract: A high efficiency solar cell having n-type aluminum arsenide grown on a p-type gallium arsenide substrate and protected by a layer of anodic oxide. The aluminum arsenide is deposited by vapor phase epitaxy by reacting high purity arsine, hydrogen chloride and aluminum at approximately 1000.degree.C in an all-alumina reactor tube system. The aluminum arsenide layer is protected from deterioration by first anodizing it in pure water and phosphoric acid at pH 2.0 with a current density of 2-8 milliamperes per square centimeter at room temperature. Second, the anodic oxide so formed is annealed at about 450.degree.C for at least twenty minutes in dry nitrogen. The oxide layer also acts as an antireflective coating. A portion of the oxide layer is etched away to expose a region of the aluminum arsenide to which an electrical contact is applied. The other contact is made to the substrate.