Abstract: An integrated pad and belt for polishing a surface comprising a belt integrated with a polishing pad that forms a seamless polishing surface.

Abstract: An apparatus for chemically mechanically planarizing a semiconductor wafer is disclosed having a continuous polishing strip with first side having a fixed abrasive surface and a second side opposite the first side. In one embodiment, a first drive roller holds a first end of the polishing strip, a second drive roller holds a second end of the polishing strip, and a pair of support rollers contacts the second side of the polishing strip on either end of a polishing strip support. A drive motor is operably connected to the first and second drive rollers for moving the polishing strip in a linear, bi-directional manner.

Abstract: A method for preparing a semiconductor wafer surface is provided which includes providing a plurality of source inlets and a plurality of source outlets and applying isopropyl alcohol (IPA) vapor gas through the plurality of source inlets to the wafer surface when the plurality of source inlets and outlets are in close proximity to the wafer surface. The method also includes applying a fluid through the plurality of source inlets to the wafer surface while applying the IPA vapor gas, and removing the applied IPA vapor gas and fluid from the wafer surface through the plurality of source outlets.

Abstract: A system is provided for use in semiconductor wafer cleaning operations. The cleaning system has a top cap and a bottom cap. The top cap seals on a top surface contact ring of a wafer, and the bottom cap seals on a bottom surface contact ring of the wafer. The wafer is held between the top cap and the bottom cap. An edge clean roller is used for cleaning an edge of the wafer. A drive roller is configured to rotate the wafer, the top cap, and the bottom cap. The edge clean roller rotates at a first velocity and the drive roller rotates at a second velocity so as to facilitate an edge cleaning of the wafer by the edge clean roller.

Abstract: A method for preparing a semiconductor wafer surface is provided which includes providing a plurality of source inlets and a plurality of source outlets and applying isopropyl alcohol (WPA) vapor gas through the plurality of source inlets to the wafer surface when the plurality of source inlets and outlets are in close proximity to the wafer surface. The method also includes applying a fluid through the plurality of source inlets to the wafer surface while applying the IPA vapor gas, and removing the applied IPA vapor gas and fluid from the wafer surface through the plurality of source outlets.

Abstract: An apparatus for chemically mechanically planarizing a semiconductor wafer is disclosed having a continuous polishing strip with first side having a fixed abrasive surface and a second side opposite the first side. In one embodiment, a first drive roller holds a first end of the polishing strip, a second drive roller holds a second end of the polishing strip, and a pair of support rollers contacts the second side of the polishing strip on either end of a polishing strip support. A drive motor is operably connected to the first and second drive rollers for moving the polishing strip in a linear, bi-directional manner.

Abstract: A wafer cleaner and dryer to be used in wafer manufacturing operations is provided. The wafer cleaner and dryer has a proximity head which moves toward a wafer surface to complete either a cleaning or a drying operation. The proximity head includes a plurality of source inlets where the plurality of source inlets generates a first pressure on a fluid film present on the wafer surface when the proximity head is in a first position that is close to the wafer surface. The proximity head also contains a plurality of source outlets which introduces a second pressure on the fluid film present on the wafer surface when the proximity head is in the first position. The first pressure generated by the plurality of source inlets is greater than the second pressure created by the plurality of source outlets so as to create a pressure difference where the pressure difference causes removal of the fluid film from the wafer surface.

Abstract: An apparatus for chemically mechanically planarizing a semiconductor wafer is disclosed having a continuous polishing strip with first side having a fixed abrasive surface and a second side opposite the first side. In one embodiment, a first drive roller holds a first end of the polishing strip, a second drive roller holds a second end of the polishing strip, and a pair of support rollers contacts the second side of the polishing strip on either end of a polishing strip support. A drive motor is operably connected to the first and second drive rollers for moving the polishing strip in a linear, bi-directional manner.

Abstract: A method and apparatus are disclosed for chemically-mechanically polishing and planarizing semiconductors. An apparatus includes first and second rollers connected by a tension belt. A polishing member is releasably attached to the first and second rollers. A method includes clamping a first portion of a continuous strip of polishing member to a first roller, clamping a second portion of the continuous strip to a second roller, applying a tension to the continuous strip and rotationally reciprocating the rollers while pressing a semiconductor wafer against the continuous strip.