Abstract: An integrated circuit (IC) includes a heated portion. The heated portion/IC includes a substrate having a topside semiconductor surface having circuitry configured to provide a circuit function. A pre-metal dielectric (PMD) layer is on the topside semiconductor surface. A metal interconnect stack is on the PMD. A trim portion includes one or more temperature sensitive circuit components which affect a temperature behavior of the IC. The heated portion extends over and beyond an area of the trim portion having an integrated heating structure including at least a first heater formed from a metal interconnect level that includes a first plurality of winding segments which have a varying pitch. A heat spreader formed from a second metal interconnect layer is between trim portion and the first heater. Thermal plugs are lateral to the temperature sensitive circuit components and thermally couple the heat spreader to the topside semiconductor surface.

Abstract: Apparatus within power sourcing equipment and a method for determining whether a load within a powered device coupled to the power sourcing equipment via a cable is within an acceptable resistance range. If the load is within the acceptable resistance range, a voltage source is coupled to the load. In one embodiment one recharge interval is employed during which a capacitor is charged based, at least in part, on the voltage drop across the load and one discharge interval is employed during which a capacitor is discharged based, at least in part, on the voltage drop across the load. In a second embodiment, first and second recharge and discharge intervals are employed and prior to initiation of the recharge and discharge intervals, settling time periods are provided.

Abstract: Apparatus within power sourcing equipment and a method for determining whether a load within a powered device coupled to the power sourcing equipment via a cable is within an acceptable resistance range. If the load is within the acceptable resistance range, a voltage source is coupled to the load. In one embodiment one recharge interval is employed during which a capacitor is charged based, at least in part, on the voltage drop across the load and one discharge interval is employed during which a capacitor is discharged based, at least in part, on the voltage drop across the load. In a second embodiment, first and second recharge and discharge intervals are employed and prior to initiation of the recharge and discharge intervals, settling time periods are provided.

Abstract: A transformer isolated circuit for driving a semiconductor power switch includes a transformer which is driven with a high frequency Pulse Width Modulated (PWM) signal in such a way that the constantly present PWM carrier supplies the power needed for high gate current pulses, while different duty cycles determine the "on" or "off" state of the power device under control. Transformer saturation is prevented by sensing primary current and returning it to zero once per PWM cycle. Because of the high PWM carrier frequency used, the average transformer power is low, yet the secondary side is able to deliver high pulse currents for fast "on-off" switching of the gate of even the largest N- or P-channel device, without need for auxiliary power supplies. Also included are provisions for extremely fast output current limiting, for use where short circuit protection is necessary. Discussion of a monolithic implementation is included.