Abstract: The invention relates to a semiconductor device comprising: i) a substrate (1) comprising an insulating layer (2), wherein the electrically insulating layer (2) comprises a recess (99), and ii) a first conductive wire (20). The first conductive wire (20) comprises a first conductive sub-layer (22) provided within the recess (99), and comprises a second conductive sub-layer (24) provided on the first conductive sub-layer (22) forming a shunt for the first conductive sub-layer (22), wherein the first conductive sub-layer (22) comprises tungsten and the second conductive sub-layer (24) comprises aluminum, wherein the first conductive sub-layer (22) and the second conductive sub-layer (24) are substantially planar, and wherein the second conductive sub-layer (24) has substantially the same pattern as the first conductive sub-layer (22). The invention provides a semiconductor device, wherein the charge transport problem is improved, while ensuring a large packing density and a full flat-topology.

Abstract: The invention relates to a semiconductor device comprising: i) a substrate (1) comprising an insulating layer (2), wherein the electrically insulating layer (2) comprises a recess (99), and ii) a first conductive wire (20). The first conductive wire (20) comprises a first conductive sub-layer (22) provided within the recess (99), and comprises a second conductive sub-layer (24) provided on the first conductive sub-layer (22) forming a shunt for the first conductive sub-layer (22), wherein the first conductive sub-layer (22) comprises tungsten and the second conductive sub-layer (24) comprises aluminum, wherein the first conductive sub-layer (22) and the second conductive sub-layer (24) are substantially planar, and wherein the second conductive sub-layer (24) has substantially the same pattern as the first conductive sub-layer (22). The invention provides a semiconductor device, wherein the charge transport problem is improved, while ensuring a large packing density and a full flat-topology.

Abstract: The image sensor comprises a semiconductor body (1) having gate electrodes (3, 4) at a surface (2), each gate electrode being combined with the semiconductor body (1) and an intermediate dielectric (14) so as to form a MOS capacitor (5), which gate electrodes (3, 4) include a portion (6) which is thinner than a surrounding zone (7), a photosensitive region (8) in the semiconductor body (1) being situated below each gate electrode (3, 4), said photosensitive region (8) being capable of absorbing electromagnetic radiation and converting said radiation to electric charge. The MOS capacitors (5) are arranged next to each other so as to form an array (9), with the gate electrodes (3, 4) in a row (10) electrically contacting each other, and the gate electrodes (3, 4) in a column (11) being mutually separated only by electrically insulating material (12). The image sensor has an improved photosensitivity, particularly for electromagnetic radiation with a short wavelength.

Abstract: The image sensor comprises a semiconductor body (1) having gate electrodes (3, 4) at a surface (2), each gate electrode being combined with the semiconductor body (1) and an intermediate dielectric (14) so as to form a MOS capacitor (5), which gate electrodes (3, 4) include a portion (6) which is thinner than a surrounding zone (7), a photosensitive region (8) in the semiconductor body (1) being situated below each gate electrode (3, 4), said photosensitive region (8) being capable of absorbing electromagnetic radiation and converting said radiation to electric charge. The MOS capacitors (5) are arranged next to each other so as to form an array (9), with the gate electrodes (3, 4) in a row (10) electrically contacting each other, and the gate electrodes (3, 4) in a column (11) being mutually separated only by electrically insulating material (12). The image sensor has an improved photosensitivity, particularly for electromagnetic radiation with a short wavelength.

Abstract: In a method of manufacturing a multilayer film consisting of a stack of primary soft-magnetic layers and secondary non-magnetic layers on a substrate by way of reactive sputtering, use is made of one type of target at least as regards composition for alternately depositing a primary and a secondary layer, which target is particularly made of an FeHf alloy. For performing a sputtering process, use is preferably made of a gas mixture of Ar and O2 in which the quantity of O2 in the gas mixture is controllable and is smaller for sputtering the soft-magnetic layers than for sputtering the non-magnetic layers.