Abstract: An integrated transistor device has reverse bias breakdown protection for both the base-collector PN junction and the base-emitter PN junction. The base-emitter PN junction is protected by means of a diode effectively in parallel relation therewith, and the base-collector PN junction is protected by means of a protective region which provides a punch-through mode of operation.

Abstract: A non-destructive test apparatus includes current limiting means whose current conducting level is set according to the transistor characteristics under test. The current limiting means is in series with the collector-emitter electrodes of the transistor under test. A test voltage is placed across the series-connected current limiting means and test transistor. The test transistor is rendered non-conductive in accordance with the characteristics being tested. If the transistor enters a voltage breakover region known as "snap-back," destructive failure of the transistor is imminent causing a change in voltage across the current limiting means. Upon this change in voltage being sensed, destructive power is directed away from the transistor under test.

Abstract: A knee prosthesis comprising upper and lower metal members each having an extension adapted to fit into the narrow cavity of the adjacent femur and tibia the member being interconnected with one member entering the body of the other member in which there are half bearing members, the lower member being capable of rotating about the axis of the body and also, to a predetermined extent about the axis at right angles thereto.