Abstract: A method for electrically bonding tantalum thin film capacitor networks to other networks is described. A first non-conducting support member has a thin film tantalum capacitor mounted thereon. A second non-conducting support member has another component such as a resistor mounted thereon. The two non-conducting support members are placed in a back-to-back position so that the thin film tantalum capacitor and the other component are remote from each other. These two non-conducting support members are then bound together and dipped into a molten solder bath to form a solder coating on the metal elements of the completed network.

Abstract: A method of producing thin film tantalum capacitors having a tantalum thin film electrode mounted on a nonconducting support member is described. The tantalum electrode is doped with nitrogen to produce a nitrogen content in a range from the nitrogen content of .beta. tantalum to that for tantalum nitride. A tantalum pentoxide film with dielectric properties is grown on the tantlum electrode by oxidation. At least, the tantalum electrode and the dielectric are subjected to tempering. The dielectric is then covered with another electrode.