Abstract: A method for measuring the resistance or conductivity between two or more conductors which are placed against a semiconductor element, the conductors are placed either in contact with the top surface or one conductor is placed in contact with the top surface and the other conductor is in the form of a large ohmic contact applied to the bottom surface of the semiconductor element. In order to bring the contact resistance between the top conductor(s) and the element to, and hold it at, a predetermined value during measuring, the conductor(s) are held at a constant distance and/or under constant pressure relative to the semiconductor element by use of a scanning proximity microscope. The top conductor may have a boron implanted diamond tip. The carrier profile of the semiconductor element is determined from previously derived calibration curves.