Patents by Inventor Wilhelm Kegel
Wilhelm Kegel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180366352Abstract: The invention relates to a method and to a device for the thermal treatment of substrates, in particular semiconductor wafers, and to a holding unit for substrates. In the method, in a process unit having a process chamber and having a plurality of radiation sources, one or more substrates are held in a box having a lower part and having a cover, wherein the lower part and the cover form a holding space for the substrate therebetween. Furthermore, the following steps are performed in the method: loading the box and the substrate into the process chamber and closing the process chamber; purging the holding space of the box with a purging gas and/or a process gas before the box and the substrate contained therein are heated to a desired process temperature in order to establish a desired atmosphere inside the box; and heating the box and the substrate contained therein to the desired process temperature by means of thermal radiation emitted by the radiation sources.Type: ApplicationFiled: December 2, 2016Publication date: December 20, 2018Inventors: Steffem Müller, Helmut Aschner, Thomas Keller, Wilhelm Kegel, Wilfried Lerch
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Patent number: 9711388Abstract: A substrate holder having a plate element for receiving a substrate includes at least one recess in a first side and spacers in the at least one recess. At least one opening is fluidly connected to the recess and is connectable to an external gas delivery/exhaust unit. At least one notch or channel radially surrounds the recess. At least one opening is fluidly connected to the notch or channel and is connectable to an external gas delivery/exhaust unit. A circumferential web radially surrounds the recess and is located between the recess and the notch or channel. A first circumferential contact surface is formed on the upper side of the web and radially surrounds the recess, such that a substrate abutting against the first contact surface forms an enclosed chamber with the recess. A second circumferential contact surface radially surrounds the notch or channel.Type: GrantFiled: November 11, 2013Date of Patent: July 18, 2017Assignee: Centrotherm Photovoltaics AGInventors: Johann Georg Reichart, Wilhelm Kegel, Günther Kummer, Reinhold Obst, Wilfried Lerch
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Publication number: 20160217982Abstract: Disclosed are a method and an apparatus for the detection of a plasma in a process chamber for the treatment of substrates. In the method, the pressure within the chamber is measured over a period of time using a pressure sensor, a sudden change in pressure is detected and an ignition or extinguishing of a plasma determined at least by means of the pressure change. The apparatus comprises a process chamber, for receiving at least one substrate, with at least one plasma generator, at least one pressure sensor which is situated so as to detect the pressure within the process chamber and output an output signal corresponding to the pressure, and at least one evaluation unit. The evaluation unit is capable of monitoring over a period of time an output signal from the pressure sensor and, on the basis of at least one sudden change in the output signal of the pressure sensor, of determining an ignition and/or an extinguishing of a plasma.Type: ApplicationFiled: August 22, 2014Publication date: July 28, 2016Inventors: Wilhelm Kegel, Wilfried Lerch, Jürgen Niess, Nicole Sacher
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Patent number: 9252011Abstract: A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.Type: GrantFiled: July 12, 2012Date of Patent: February 2, 2016Assignee: Centrotherm Photovoltaics AGInventors: Juergen Niess, Wilfried Lerch, Wilhelm Kegel, Alexander Gschwandtner
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Publication number: 20150294893Abstract: A substrate holder having a plate element for receiving a substrate.Type: ApplicationFiled: November 11, 2013Publication date: October 15, 2015Inventors: Johann Georg Reichart, Wilhelm Kegel, Günther Kummer, Reinhold Obst, Wilfried Lerch
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Publication number: 20140179117Abstract: A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.Type: ApplicationFiled: July 12, 2012Publication date: June 26, 2014Applicant: Centrotherm Thermal Solutions GmbH & Co. KGInventors: Jurgen Niess, Wilfried Lerch, Wilhelm Kegel, Alexander Gschwandtner
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Patent number: 7151060Abstract: A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.Type: GrantFiled: July 25, 2003Date of Patent: December 19, 2006Assignee: Mattson Thermal Products GmbHInventors: Georg Roters, Steffen Frigge, Sing Pin Tay, Yao Zhi Hu, Regina Hayn, Jens-Uwe Sachse, Erwin Schoer, Wilhelm Kegel
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Patent number: 7094637Abstract: During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.Type: GrantFiled: October 27, 2003Date of Patent: August 22, 2006Assignee: Infineon Technologies AGInventors: Olaf Storbeck, Wilhelm Kegel, Jens-Uwe Sachse, Michael Stadtmüller, Regina Hayn, Erwin Schoer, Georg Roters, Steffen Frigge
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Publication number: 20060105584Abstract: A device for thermally treating semiconductor wafers having at least one silicon layer to be oxidized and a metal layer, preferably a tungsten layer, which is not to be oxidized. The inventive device comprises the following: at least one radiation source; a treatment chamber receiving the substrate, with at least one wall part located adjacent to the radiation sources and which is substantially transparent for the radiation of said radiation source; and at least one cover plate between the substrate and the wall part of the treatment chamber located adjacent to the radiation sources, the dimensions of said cover plate being selected such that it fully covers the transparent wall part of the treatment chamber in relation to the substrate in order to prevent material, comprising a metal, metal oxide or metal hydroxide such as tungsten, tungsten oxide or tungsten hydroxide, from said substrate from becoming deposited on or evaporating onto the transparent wall part of the treatment chamber.Type: ApplicationFiled: July 25, 2003Publication date: May 18, 2006Inventors: Georg Roters, Steffen Frigge, Sing Tay, Yao Zhi Hu, Regina Hayn, Jens-Uwe Sachse, Erwin Schoer, Wilhelm Kegel
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Publication number: 20040121569Abstract: During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.Type: ApplicationFiled: October 27, 2003Publication date: June 24, 2004Inventors: Olaf Storbeck, Wilhelm Kegel, Jens-Uwe Sachse, Michael Stadtmuller, Regina Hayn, Erwin Schoer, Georg Roters, Steffen Frigge
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Patent number: 6706616Abstract: A method for controlling temperature of a semiconductor wafer in a process chamber includes heating the chamber from a starting temperature to a stabilizing temperature at a heating rate of approximately 12 degrees Celsius per second and maintaining the chamber at the stabilizing temperature for a selected stabilization period. The chamber is then heated from the stabilizing temperature to a process temperature at a heating rate of approximately 10 degrees Celsius per second. This process temperature is maintained for a selected processing period. After the period, the chamber is cooled to an exit temperature at a selected low cooling rate.Type: GrantFiled: January 14, 2002Date of Patent: March 16, 2004Assignee: Infineon Technologies AGInventors: Wilhelm Kegel, Thomas Schuster
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Patent number: 6699747Abstract: In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over the layer of silicon. The layer of silicon and the layer of the oxidizable metal are subsequently oxidized to form a layer of silicon oxide and metal oxide.Type: GrantFiled: November 18, 2002Date of Patent: March 2, 2004Assignee: Infineon Technologies AGInventors: Alexander Ruff, Wilhelm Kegel, Wolfram Karcher, Martin Schrems
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Publication number: 20030073283Abstract: In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over the layer of silicon. The layer of silicon and the layer of the oxidizable metal are subsequently oxidized to form a layer of silicon oxide and metal oxide.Type: ApplicationFiled: November 18, 2002Publication date: April 17, 2003Applicant: Infineon Technologies AGInventors: Alexander Ruf, Wilhelm Kegel, Wolfram Karcher, Martin Schrems
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Publication number: 20010030352Abstract: In a method for forming a trench capacitor a first layer of silicon oxide is deposited in a storage trench and a layer of silicon is deposited over the first layer by a chemical vapor deposition process. A layer of an oxidizable metal is deposited over the layer of silicon. The layer of silicon and the layer of the oxidizable metal are subsequently oxidized to form a layer of silicon oxide and metal oxide.Type: ApplicationFiled: February 28, 2001Publication date: October 18, 2001Inventors: Alexander Ruf, Wilhelm Kegel, Wolfram Karcher, Martin Schrems