Abstract: A process for producing high purity silicon semiconductor materials and mls by the thermal decomposition of a gaseous compound containing the silicon semiconductor material or metal passing over silicon carrier bodies heated by an external electrical power source. The silicon carrier bodies are arranged into groups coupled in parallel electrical connection across the power source during the start of the deposition process. An equal amount of electrical current is passed through each of the groups of the parallel connection to heat the carrier bodies to deposition temperature. The same current flows in each of the parallel carrier groups by using a current-divider inductor having a winding connected to each group.