Patents by Inventor Wilhelm Platow

Wilhelm Platow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12112918
    Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.
    Type: Grant
    Filed: October 4, 2023
    Date of Patent: October 8, 2024
    Assignee: Axcelis Technologies, Inc.
    Inventors: Wilhelm Platow, Neil Bassom
  • Publication number: 20240029998
    Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.
    Type: Application
    Filed: October 4, 2023
    Publication date: January 25, 2024
    Inventors: Wilhelm Platow, Neil Bassom
  • Patent number: 11823858
    Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.
    Type: Grant
    Filed: March 28, 2022
    Date of Patent: November 21, 2023
    Assignee: Axcelis Technologies, Inc.
    Inventors: Wilhelm Platow, Neil Bassom
  • Patent number: 11798775
    Abstract: An ion source has an arc chamber with a first end and a second end. A first cathode at the first end of the arc chamber has a first cathode body and a first filament disposed within the first cathode body. A second cathode at the second end of the arc chamber has a second cathode body and a second filament disposed within the second cathode body. A filament switch selectively electrically couples a filament power supply to each of the first filament and the second filament, respectively, based on a position of the filament switch. A controller controls the position of the filament switch to alternate the electrical coupling of the filament power supply between the first filament and the second filament for a plurality of switching cycles based on predetermined criteria. The predetermined criteria can be a duration of operation of the first filament and second filament.
    Type: Grant
    Filed: September 30, 2021
    Date of Patent: October 24, 2023
    Assignee: Axcelis Technologies, Inc.
    Inventors: Wilhelm Platow, Neil Bassom, Jonathan David
  • Publication number: 20230307210
    Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.
    Type: Application
    Filed: March 28, 2022
    Publication date: September 28, 2023
    Inventors: Wilhelm Platow, Neil Bassom
  • Publication number: 20230139138
    Abstract: An ion implantation system has an ion source to generate an ion beam, and a mass analyzer to define a first ion beam having desired ions at a first charge state. A first linear accelerator accelerates the first ion beam to a plurality of first energies. A charge stripper strips electrons from the desired ions defining a second ion beam at a plurality of second charge states. A first dipole magnet spatially disperses and bends the second ion beam at a first angle. A charge defining aperture passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus spatially focuses the second ion beam, defining a third ion beam. A second dipole magnet bends the third ion beam at a second angle. A second linear accelerator accelerates the third ion beam. A final energy magnet bends the third ion beam at a third angle, and wherein an energy defining aperture passes only the desired ions at a desired energy and charge state.
    Type: Application
    Filed: October 29, 2021
    Publication date: May 4, 2023
    Inventors: Wilhelm Platow, Shu Satoh, Neil Bassom
  • Publication number: 20230100805
    Abstract: An ion source has an arc chamber with a first end and a second end. A first cathode at the first end of the arc chamber has a first cathode body and a first filament disposed within the first cathode body. A second cathode at the second end of the arc chamber has a second cathode body and a second filament disposed within the second cathode body. A filament switch selectively electrically couples a filament power supply to each of the first filament and the second filament, respectively, based on a position of the filament switch. A controller controls the position of the filament switch to alternate the electrical coupling of the filament power supply between the first filament and the second filament for a plurality of switching cycles based on predetermined criteria. The predetermined criteria can be a duration of operation of the first filament and second filament.
    Type: Application
    Filed: September 30, 2021
    Publication date: March 30, 2023
    Inventors: Wilhelm Platow, Neil Bassom, Jonathan David
  • Patent number: 11545330
    Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: January 3, 2023
    Assignee: Axcelis Technologies, Inc.
    Inventors: Wilhelm Platow, Paul Silverstein, Neil Bassom, Marvin Farley, David Sporleder
  • Publication number: 20220367138
    Abstract: An ion source has an arc chamber having first and second ends and an aperture plate to enclose a chamber volume. An extraction aperture is disposed between the first and second ends. A cathode is near the first end of the arc chamber, and a repeller is near the second end. A generally U-shaped first bias electrode is on a first side of the extraction aperture within the chamber volume. A generally U-shaped second bias electrode is on a second side of the extraction aperture within the chamber volume, where the first and second bias electrodes are separated by a first distance proximate to the extraction aperture and a second distance distal from the extraction aperture. An electrode power supply provides a first and second positive voltage to the first and second bias electrodes, where the first and second positive voltages differ by a predetermined bias differential.
    Type: Application
    Filed: May 12, 2021
    Publication date: November 17, 2022
    Inventors: Wilhelm Platow, Paul Silverstein, Neil Bassom, Marvin Farley, David Sporleder
  • Patent number: 11244800
    Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: February 8, 2022
    Assignee: Axcelis Technologies, Inc.
    Inventors: Wilhelm Platow, Neil Bassom, Shu Satoh, Paul Silverstein, Marvin Farley
  • Publication number: 20210398765
    Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.
    Type: Application
    Filed: May 26, 2021
    Publication date: December 23, 2021
    Inventors: Wilhelm Platow, Neil Bassom, Shu Satoh, Paul Silverstein, Marvin Farley
  • Publication number: 20210398772
    Abstract: An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.
    Type: Application
    Filed: June 15, 2021
    Publication date: December 23, 2021
    Inventors: Shu Satoh, Wilhelm Platow
  • Patent number: 10573485
    Abstract: An electrode system for an ion source has a source electrode that defines a source aperture in an ion source chamber, and is coupled to a source power supply. A first ground electrode defines a first ground aperture that is electrically coupled to an electrical ground potential and extracts ions from the ion source. A suppression electrode is positioned downstream of the first ground electrode and defines a suppression aperture that is electrically coupled to a suppression power supply. A second ground electrode is positioned downstream of the suppression electrode and defines a second ground aperture. The first and second ground electrodes are fixedly coupled to one another and are electrically coupled to the electrical ground potential.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: February 25, 2020
    Assignee: Axcelis Technologies, Inc.
    Inventors: Wilhelm Platow, Edward Eisner, Bo Vanderberg, Neil Bassom, Michael Cristoforo, Joshua Abeshaus
  • Patent number: 8466431
    Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
    Type: Grant
    Filed: February 12, 2009
    Date of Patent: June 18, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: James S. Buff, Svetlana Radovanov, Bon-Woong Koo, Wilhelm Platow, Frank Sinclair, D. Jeffrey Lischer, Craig R. Chaney, Steven Borichevsky, Eric R. Cobb, Mayur Jagtap, Kenneth H. Purser, Victor Benveniste, Shardul S. Patel
  • Patent number: 7812321
    Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.
    Type: Grant
    Filed: June 11, 2008
    Date of Patent: October 12, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter Kurunczi, Rajesh Dorai, Costel Biloiu, Wilhelm Platow
  • Publication number: 20100200768
    Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.
    Type: Application
    Filed: February 12, 2009
    Publication date: August 12, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: JAMES BUFF, SVETLANA RADOVANOV, BON-WOONG KOO, WILHELM PLATOW, FRANK SINCLAIR, JEFFREY D. LISCHER, CRAIG CHANEY, STEVEN BORICHEVSKY, ERIC R. COBB, MAYUR JAGTAP, KENNETH PURSER, VICTOR M. BENVENISTE, SHARDUL S. PATEL
  • Patent number: 7723697
    Abstract: Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: May 25, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Alexander S. Perel, Wilhelm Platow, Craig Chaney, Frank Sinclair, Tyler Rockwell
  • Publication number: 20090309041
    Abstract: Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion source that operates in multiple modes such that a first mode is an arc-discharge mode and a second mode is an RF mode.
    Type: Application
    Filed: June 11, 2008
    Publication date: December 17, 2009
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Peter Kurunczi, Rajesh Dorai, Costel Biloiu, Wilhelm Platow
  • Publication number: 20090078883
    Abstract: Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.
    Type: Application
    Filed: September 21, 2007
    Publication date: March 26, 2009
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Alexander S. Perel, Wilhelm Platow, Craig Chaney, Frank Sinclair, Tyler Rockwell
  • Publication number: 20070056316
    Abstract: The present invention provides methods and apparatus for the production of liquids and vapors that are free of, or substantially free of, dissolved or trapped gases. In one embodiment, a liquid is placed in a sealed vessel and subjected to a temperature below the freezing point of the liquid for sufficient time to substantially, if not completely, turn the liquid into a solid. Concurrent with or subsequent to the cooling of the liquid, the interior of the vessel is subjected to a vacuum so as to evacuate all or substantially all of the gaseous atmosphere. Thereafter, the vessel is heated to a temperature above the melting point of the liquid, allowing the frozen material to return to its liquid form or sublimate to form a vapor.
    Type: Application
    Filed: November 5, 2004
    Publication date: March 15, 2007
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Wilhelm Platow, John Cracchiolo, Stanislav Todorov, Jaime Reyes