Abstract: The invention relates to a procedure applicable for drying substrate surfaces of a large number of materials, such as semiconductors, metals, plastics and, in particular, silicon. The silicon (1) is dipped into a liquid bath (2) and the silicon (1) is separated from the liquid (3), the liquid of the bath (2) consisting of an aqueous HF solution (3) with a concentration between 0.001 and 50%. By removing the silicon from the bath at a speed of between 0.1 cm/sec and 20 cm/sec, the bath liquid drains from the hydrophobic surface to provide a clean, dry substrate.

Abstract: The invention relates to a procedure applicable for drying substrate surfaces of a large number of materials, such as semiconductors, metals, plastics and, in particular, silicon. The silicon (1) is dipped into a liquid bath (2) and the silicon (1) is separated from the liquid (3), the liquid of the bath (2) consisting of an aqueous HF solution (3) with a concentration between 0.001 and 50%. By adding a gas mixture containing O.sub.2 /O.sub.3 immediately after the drying process is finished, the silicon surface is hydrophilized. By adding a gas mixture containing O.sub.2 /O.sub.3 during the drying process, cleaning takes place as the ozone enters the solution on the liquid surface.