Abstract: A solar cell core is produced such that a charge separation and a charge transfer to an emitter and to a base located on a side of the solar cell that is opposite from the emitter are provided when there is incident light in a front side of the solar cell. An electrically conductive emitter-contact structure is produced in the form of contact fingers that are in direct electrical contact with the emitter. A solderable metallic emitter-terminal structure is produced in the form of conductor bars that are in direct electrical contact with the emitter-contact structures and transversely connect the contact fingers of the emitter-contact structure. The solderable metallic emitter-terminal structure is produced at least from nickel, a nickel alloy, tin and/or a tin alloy, and a solder or an electrically conductive strip arrangement covered with a solder is applied to this emitter-terminal structure.

Abstract: A process can be used for producing a thin layer solar cell module with a plurality of segments that are electrically connected in series and arranged on a common substrate. The process has steps for application of layers onto the substrate to form at least one electrode and one photoactive layer sequence and has steps for structuring the applied and/or to be applied layers to form the plurality of segments. At least one electrode and one photoactive layer sequence are applied before structuring steps are carried out.

Abstract: A process can be used for producing a thin layer solar cell module with a plurality of segments that are electrically connected in series and arranged on a common substrate. The process has steps for application of layers onto the substrate to form at least one electrode and one photoactive layer sequence and has steps for structuring the applied and/or to be applied layers to form the plurality of segments. At least one electrode and one photoactive layer sequence are applied before structuring steps are carried out.

Abstract: The invention concerns a process for producing a thin layer solar cell module with a plurality of segments that are electrically connected in series and arranged on a common substrate. The invention additionally concerns the corresponding thin layer solar cell modules and a production line that is suitable for conducting the production process. The process has steps for application of layers onto the substrate to form at least one electrode and one photoactive layer sequence and has steps for structuring the applied and/or to be applied layers to form the plurality of segments. At least one electrode and one photoactive layer sequence are applied before structuring steps are carried out.

Abstract: In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).

Abstract: Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point.

Abstract: The invention concerns a process for producing a thin layer solar cell module with a plurality of segments that are electrically connected in series and arranged on a common substrate. The invention additionally concerns the corresponding thin layer solar cell modules and a production line that is suitable for conducting the production process. The process has steps for application of layers onto the substrate to form at least one electrode and one photoactive layer sequence and has steps for structuring the applied and/or to be applied layers to form the plurality of segments. At least one electrode and one photoactive layer sequence are applied before structuring steps are carried out.

Abstract: A method for producing an electrical contact of an optoelectronic semiconductor chip (1), comprising providing a mirror layer (2), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer (3) over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer (5) over said protective layer; and providing a solder layer (8) over said layer sequence.

Abstract: A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).

Abstract: A radiation-emitting semiconductor chip having an absorbent brightness setting layer between a connection region and a current injection region and/or, as seen from the connection region, outside the current injection region on a front-side radiation coupling-out area of the semiconductor layer sequence. The brightness setting layer absorbs in a targeted manner part of the radiation generated in the semiconductor layer sequence. In another embodiment, a partly insulating brightness setting layer is arranged between the connection region and the active layer.

Abstract: A surface-emitting semiconductor laser component, in particular an electrically pumped semiconductor laser component, featuring emission in a vertical direction. The component is provided for the generation of laser radiation by means of an external optical resonator (4, 5). The component comprises a semiconductor body with a semiconductor layer sequence (2) having a lateral main direction of extension and an active zone (3) provided for generation of radiation. A radiation-transmissive contact layer (6) is arranged within the resonator and is electrically conductively connected to the semiconductor body.

Abstract: In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).

Abstract: A radiation-emitting semiconductor component having a semiconductor body (1), which has an active zone (2), in which, for the purpose of electrical contact connection, a patterned contact layer (3) is applied on a surface of the semiconductor body. Interspaces (4) are distributed over the contact layer (3) and are provided for the purpose of forming free areas (5) on the surface which are not covered by the contact layer (3). The free areas (5) are covered with a mirror (6). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.

Abstract: Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point.

Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Abstract: A surface-emitting semiconductor laser component, in particular an electrically pumped semiconductor laser component, featuring emission in a vertical direction. The component is provided for the generation of laser radiation by means of an external optical resonator (4, 5). The component comprises a semiconductor body with a semiconductor layer sequence (2) having a lateral main direction of extension and an active zone (3) provided for generation of radiation. A radiation-transmissive contact layer (6) is arranged within the resonator and is electrically conductively connected to the semiconductor body.

Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Abstract: A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).

Abstract: A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

Abstract: A method for producing an electrical contact of an optoelectronic semiconductor chip (1), comprising providing a mirror layer (2), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer (3) over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer (5) over said protective layer; and providing a solder layer (8) over said layer sequence.