Abstract: The invention relates to an antenna diversity comprising a first and a second antenna element where the first antenna element is operated in an active mode whereas the second antenna element is operated in a parasitic mode. The present invention minimizes the amount of mismatch while still being able to maximize a predetermined signal quality criterion for the electromagnetic signal on the active path between the first antenna element and the transceiver. By providing a pre-selection unit 130 as well as a selection unit 140 for selecting an optimal adjustable impedance connected to the second antenna ensuring that the amount of said mismatch is below a predetermined threshold value and that simultaneously a predetermined quality criterion for the transceived electromagnetic signal is fulfilled best within the range determined by the allowable mismatch. The invention further relates to a method for operating such an antenna diversity.

Abstract: The invention relates to an antenna diversity comprising a first and a second antenna element one of which is operated in an active mode whereas the other one of which is operated in a parasitic mode. It is the object of the present invention to further minimize the amount of mismatch by still being able to maximize a predetermined signal quality criterion for the electromagnetic signal on the active path between the active antenna and the transceiver. This object is solved by a switching unit 120 for either operating the first antenna element in the parasitic mode and simultaneously operating the second antenna element in the active mode or vice versa and by providing a pre-selection unit 130 as well as a selection unit 140 for selecting an optimal configuration for the antenna diversity ensuring that the amount of said mismatch is below a predetermined threshold value and that simultaneously a predetermined quality criterion for the transceived electromagnetic signal is fulfilled best.

Abstract: A method of manufacturing a hybrid integrated circuit comprising a semiconductor element (1) and a piezoelectric filter (2), which are situated next to each other and connected to a carrier substrate (3). The semiconductor element comprises semiconductor regions (5, 6) which are formed in a silicon layer (13, 28); the piezoelectric filter comprises an acoustic resonator (8, 9, 10) which is situated on an acoustic reflector layer (7), which acoustic resonator comprises a layer of piezoelectric material (8), a first electrode (9) situated between the layer of piezoelectric material and the acoustic reflector layer, and a second electrode (10) which is situated on the opposite side of the piezoelectric layer and faces the first electrode. In the method, the semiconductor element is formed on the first side (11) of a silicon wafer (12, 25).

Abstract: A method of manufacturing a hybrid integrated circuit comprising a semiconductor element (1) and a piezoelectric filter (2), which are situated next to each other and connected to a carrier substrate (3). The semiconductor element comprises semiconductor regions (5, 6) which are formed in a silicon layer (13, 28); the piezoelectric filter comprises an acoustic resonator (8, 9, 10) which is situated on an acoustic reflector layer (7), which acoustic resonator comprises a layer of piezoelectric material (8), a first electrode (9) situated between the layer of piezoelectric material and the acoustic reflector layer, and a second electrode (10) which is situated on the opposite side of the piezoelectric layer and faces the first electrode. In the method, the semiconductor element is formed on the first side (11) of a silicon wafer (12, 25).

Abstract: A semiconductor device (1) with an operating frequency above 50 MHz comprises a body (2) composed of a soft ferrite material, which body (2) has a surface (3) to which a semiconductor element (4), a pattern of conductors (5,6) and a passive element in the form of a planar inductor (7) are fastened by means of a layer (8) of adhesive. In order to reduce the manufacturing costs of the semiconductor device without adversely affecting the performance of the semiconductor device performance, a soft ferrite material is applied having a ferromagnetic resonance frequency smaller than the operating frequency of the semiconductor device.