Patents by Inventor Will Conley

Will Conley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming openings in a semiconductor device and a semiconductor device fabricated by the method
    Patent number: 8435874
    Abstract: A method of forming openings to a layer of a semiconductor device comprises forming a dielectric layer over the layer of the semiconductor device, and forming a mask over the dielectric layer. The mask comprises a plurality of mask openings arranged in a regular pattern extending over the dielectric layer and the plurality of mask openings include a plurality of first mask openings and a plurality of second mask openings, each of the plurality of first mask openings being greater in size than each of the plurality of second mask openings. The method further comprises reducing the size of the plurality of second mask openings such that each of the second mask openings is substantially closed and removing portions of the dielectric layer through the plurality of first mask openings to provide openings extending through the dielectric layer to the layer.
    Type: Grant
    Filed: January 23, 2008
    Date of Patent: May 7, 2013
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Scott Warrick, Massud Abubaker Aminpur, Will Conley, Lionel Riviere-Cazeaux
  • METHOD OF FORMING OPENINGS IN A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE FABRICATED BY THE METHOD
    Publication number: 20100291770
    Abstract: A method of forming openings to a layer of a semiconductor device comprises forming a dielectric layer over the layer of the semiconductor device, and forming a mask over the dielectric layer. The mask comprises a plurality of mask openings arranged in a regular pattern extending over the dielectric layer and the plurality of mask openings include a plurality of first mask openings and a plurality of second mask openings, each of the plurality of first mask openings being greater in size than each of the plurality of second mask openings. The method further comprises reducing the size of the plurality of second mask openings such that each of the second mask openings is substantially closed and removing portions of the dielectric layer through the plurality of first mask openings to provide openings extending through the dielectric layer to the layer.
    Type: Application
    Filed: January 23, 2008
    Publication date: November 18, 2010
    Inventors: Scott Warrick, Massud Abubaker Aminpur, Will Conley, Lionel Riviere-Cazeaux