Abstract: A method for forming a semiconductor device includes providing a plurality of features in a layout, selecting critical features from the plurality of features, placing a first plurality of short-range dummy etch features in the layout at a first distance from the critical features to increase the feature density near the critical features, wherein each of the first plurality of short-range dummy etch features has a first width, removing at least one of the first plurality of short-range dummy etch features from the layout that will subsequently interfere with the electrical performance of at least one active feature so that a second plurality of short-range dummy etch features remains, and using the layout to pattern a layer on a semiconductor substrate.

Abstract: A semiconductor device (10) includes a photoresist layer (20) for patterning features on the semiconductor device (10) during manufacturing. After the photoresist layer (20) is deposited, the semiconductor device (10) is exposed to fluorine using a fluorination module (126). In one embodiment, the fluorine is applied via a plasma in the fluorination module (126). In other embodiments, the fluorine may be applied in other gaseous or liquid forms. Fluorinating the photoresist layer (20) functions to prevent slimming of the features when dimensions of the features are measured using a scanning electron microscope (SEM).