Abstract: The present invention relates to an image sensor and to an imaging system comprising such a sensor. According to the invention, the overall conversion curve describing the conversion between photon flux and digital number comprises a first region in which the conversion is essentially linear and a second region in which the conversion is essentially non-linear. According to the invention, the non-linearity of the second region is obtained by operating the photodiode of the image sensor in its non-linear range and by changing the gain associated with the conversion between pixel voltage and digital number.

Abstract: The present invention relates to an X-ray imaging system. The invention further relates to an X-ray sensor to be used in such system and to a method for manufacturing such sensors. According to the invention, the combination of a lower saturation dose and obtaining a plurality of image frames during a single exposure, can be used to form a final X-ray image having an improved dynamic range.

Abstract: The present invention relates to an image sensor and to an imaging system comprising such a sensor. According to the invention, the overall conversion curve describing the conversion between photon flux and digital number comprises a first region in which the conversion is essentially linear and a second region in which the conversion is essentially non-linear. According to the invention, the non-linearity of the second region is obtained by operating the photodiode of the image sensor in its non-linear range and by changing the gain associated with the conversion between pixel voltage and digital number.

Abstract: The present invention is related to a multi full-well pixel for a metal-oxide-semiconductor (MOS) active pixel image sensor. It is further related to a MOS active pixel image sensor comprising a plurality of such pixels. The invention is particularly related to active pixel image sensors realized in complementary MOS (CMOS) technology. According to the invention, a MOS capacitor is used as a switchable capacitor, wherein the gate electrode is connected to the voltage that is to be read out. Semiconductor-side contacts of the MOS capacitor are used to apply a switching control signal that allows the effective capacitance of the MOS capacitor to be selected and being radiation-hard for damaging X-ray radiation.

Abstract: A pixel circuit comprises a first capacitor, a photo diode and a switch. A voltage source generates a reference voltage to reset the pixel circuit. The pixel circuit is reset for a first reset time period by electrically coupling a cathode of the photo diode and a first capacitor terminal to the voltage source. The cathode is decoupled from the voltage source and the photo diode is exposed to light for an accumulation time period. After the accumulation time period, a first reference voltage is sampled. The cathode is then coupled, via the switch, to the first capacitor terminal for a selected transfer time period, during which a second signal voltage is sampled. After the selected transfer time period, a first signal voltage is sampled with the cathode decoupled. The pixel circuit is then reset for a second reset time period, after which a second reference voltage value is sampled.

Abstract: The invention relates to a semiconductor device comprising: i) a substrate (1) comprising an insulating layer (2), wherein the electrically insulating layer (2) comprises a recess (99), and ii) a first conductive wire (20). The first conductive wire (20) comprises a first conductive sub-layer (22) provided within the recess (99), and comprises a second conductive sub-layer (24) provided on the first conductive sub-layer (22) forming a shunt for the first conductive sub-layer (22), wherein the first conductive sub-layer (22) comprises tungsten and the second conductive sub-layer (24) comprises aluminum, wherein the first conductive sub-layer (22) and the second conductive sub-layer (24) are substantially planar, and wherein the second conductive sub-layer (24) has substantially the same pattern as the first conductive sub-layer (22). The invention provides a semiconductor device, wherein the charge transport problem is improved, while ensuring a large packing density and a full flat-topology.

Abstract: The present invention relates to an X-ray imaging system. The invention further relates to an X-ray sensor to be used in such system and to a method for manufacturing such sensors. According to the invention, the combination of a lower saturation dose and obtaining a plurality of image frames during a single exposure, can be used to form a final X-ray image having an improved dynamic range.

Abstract: The present invention is related to a multi full-well pixel for a metal-oxide-semiconductor (MOS) active pixel image sensor. It is further related to a MOS active pixel image sensor comprising a plurality of such pixels. The invention is particularly related to active pixel image sensors realized in complementary MOS (CMOS) technology. According to the invention, a MOS capacitor is used as a switchable capacitor, wherein the gate electrode is connected to the voltage that is to be read out. Semiconductor-side contacts of the MOS capacitor are used to apply a switching control signal that allows the effective capacitance of the MOS capacitor to be selected and being radiation-hard for damaging X-ray radiation.

Abstract: A pixel circuit comprises a first capacitor,a photo diode and a switch. A voltage source generates a reference voltage to reset the pixel circuit. The pixel circuit is reset for a first reset time period by electrically coupling a cathode of the photo diode and a first capacitor terminal to the voltage source. The cathode is decoupled from the voltage source and the photo diode is exposed to light for an accumulation time period. After the accumulation time period,a first reference voltage is sampled. The cathode is then coupled, via the switch, to the first capacitor terminal for a selected transfer time period, during which a second signal voltage is sampled. After the selected transfer time period, a first signal voltage is sampled with the cathode decoupled. The pixel circuit is then reset for a second reset time period, after which a second reference voltage value is sampled.

Abstract: The invention relates to a method of reading out a CMOS image sensor. The method includes setting a pixel (Pxl) in a first mode (SS) and resetting the pixel (Pxl) so the predefined voltage (V-ref) is set over the photo-diode (Dde) and the first capacitance (C_low). The method further includes collecting charge carriers that reduce the pixel potential (Vp) on the photo-diode (Dde). The method further includes reading out the pixel (Pxl) while in the first mode (SS) and a second mode (LS), and storing the pixel potential (Vp). The method further includes resetting the pixel (Pxl) such that the predefined voltage (V_ref) is over the photo-diode (Dde), the first capacitance (C_low), and the second capacitance (C_high). The method further includes reading out the pixel (Pxl) while in the second mode (LS) and the first mode (SS), and storing the pixel potential (Vp).

Abstract: The invention relates to a semiconductor device comprising: i) a substrate (1) comprising an insulating layer (2), wherein the electrically insulating layer (2) comprises a recess (99), and ii) a first conductive wire (20). The first conductive wire (20) comprises a first conductive sub-layer (22) provided within the recess (99), and comprises a second conductive sub-layer (24) provided on the first conductive sub-layer (22) forming a shunt for the first conductive sub-layer (22), wherein the first conductive sub-layer (22) comprises tungsten and the second conductive sub-layer (24) comprises aluminum, wherein the first conductive sub-layer (22) and the second conductive sub-layer (24) are substantially planar, and wherein the second conductive sub-layer (24) has substantially the same pattern as the first conductive sub-layer (22). The invention provides a semiconductor device, wherein the charge transport problem is improved, while ensuring a large packing density and a full flat-topology.

Abstract: The invention relates to a method of reading out a CMOS image sensor. The respective pixels having a first mode and a second mode.

Abstract: Disclosed are embodiments of a semiconductor device comprising a semiconductor body with a semiconductor image sensor comprising a two-dimensional matrix of picture elements, each picture element comprising a radiation-sensitive element coupled to MOS field effect transistors for reading the radiation-sensitive elements, wherein a semiconductor region is sunken in the surface of the body having the same conductivity type as the body and having an increased doping concentration, the semiconductor region being disposed between the radiation-sensitive elements of neighboring picture elements.

Abstract: A method of scanning pixels, each pixel including a photodiode and a sense node formed in the substrate, including a transfer gate coupled between the photodiode and the sense node, and including a memory gate coupled between the photodiode and the transfer gate. The method switches a control signal, connected to a memory gate electrode of all pixels, alternately between a first voltage and a second voltage that is intermediate between the first voltage and a substrate voltage. The first voltage transfers all photo charge in each photodiode into the respective memory gate. The second voltage both (1) holds all photo charge already transferred into the memory gate and (2) blocks further transfer of photo charges into each memory gate. The method further includes reading out photo charge from the memory gate on a row-by-row basis while the control signal is at the second voltage.

Abstract: The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with a plurality of active pixels arranged in rows and columns each pixel comprising a pinned photodiode and a plurality of transistors for operating the pixel in the image forming process and including reset means. According to the invention the semiconductor device comprises also precharge means by which the photodiode can be precharged by a fixed amount of charge carriers after it has been reset by the reset means. In this way the sensors has a highly linear response, in particular at low light/radiation level, and a very low noise. The sensor is very suitable for X-ray/medical applications.

Abstract: A method of scanning pixels, each pixel including a photodiode and a sense node formed in the substrate, including a transfer gate coupled between the photodiode and the sense node, and including a memory gate coupled between the photodiode and the transfer gate. The method switches a control signal, connected to a memory gate electrode of all pixels, alternately between a first voltage and a second voltage that is intermediate between the first voltage and a substrate voltage. The first voltage transfers all photo charge in each photodiode into the respective memory gate. The second voltage both (1) holds all photo charge already transferred into the memory gate and (2) blocks further transfer of photo charges into each memory gate. The method further includes reading out photo charge from the memory gate on a row-by-row basis while the control signal is at the second voltage.

Abstract: The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with an active region having viewed in projection first sides and second sides perpendicular to the first sides said active region comprising a matrix of active pixels arranged in rows and columns, each pixel having a photosensitive region, the device further comprising a plurality of circuit elements for operating the pixel in the image forming process, the plurality of circuit elements comprising a first set of circuit elements for read-out of the columns and a second set of circuit elements for controlling the rows. According to the invention a first part of the plurality of circuit elements is positioned outside the matrix along one of the first sides and a second part of the plurality of circuit elements is positioned within the matrix of active pixels remote from the second sides.

Abstract: The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with an active region having viewed in projection first sides and second sides perpendicular to the first sides said active region comprising a matrix of active pixels arranged in rows and columns, each pixel having a photosensitive region, the device further comprising a plurality of circuit elements for operating the pixel in the image forming process, the plurality of circuit elements comprising a first set of circuit elements for read-out of the columns and a second set of circuit elements for controlling the rows. According to the invention a first part of the plurality of circuit elements is positioned outside the matrix along one of the first sides and a second part of the plurality of circuit elements is positioned within the matrix of active pixels remote from the second sides.

Abstract: The invention relates to a semiconductor device with a semiconductor body (12) with an image sensor comprising a two-dimensional matrix of pixels (1) each comprising a radiation-sensitive element (2) with a charge accumulating semiconductor region (2A) and coupled to a number of MOS field effect transistors (3), in which in the semiconductor body (12) an isolation region (4) is sunken for the separation of neighboring pixels (1) underneath which a further semiconductor region (5) with an enlarged doping concentration is formed. According to the invention the further semiconductor region (5) is sunken in the surface of the semiconductor body (12) and wider than the isolation region (4).

Abstract: The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with a plurality of active pixels arranged in rows and columns each pixel comprising a pinned photodiode and a plurality of transistors for operating the pixel in the image forming process and including reset means. According to the invention the semiconductor device comprises also precharge means by which the photodiode can be precharged by a fixed amount of charge carriers after it has been reset by the reset means. In this way the sensors has a highly linear response, in particular at low light/radiation level, and a very low noise. The sensor is very suitable for X-ray/medical applications.