Abstract: In an arrangement for providing a layer of semiconductor material on a flat side of a substrate from a solution which contains the semiconductor material, the substrate is provided in a recess of a substrate holder which closes the lower side of the reservoir containing the solution. By a relative displacement of the reservoir relative to the substrate holder, the flat side of the substrate is moved below or away from the solution present in the reservoir. The flat side of the substrate is brought to a desired height relative to the lower side of the reservoir, and solution from the reservoir is provided on the substrate. When the reservoir is removed relative to the substrate, a quantity of solution at an adjustable height is left on the substrate.

Abstract: A method of manufacturing a semiconductor device having a monocrystalline substrate and a plurality of epitaxial layers successively deposited on the substrate is disclosed. The device is manufactured by successively contacting the substrate with solutions which are previously saturated by contact with a plurality of auxiliary substrates, in a process in which the monocrystalline substrate, the auxiliary substrates and the solutions are cooled before the layers are deposited. The method includes the steps of contacting a first auxiliary substrate with a first solution, contacting a second auxiliary substrate with this first solution while simultaneously contacting the first auxiliary substrate with a second solution, contacting the monocrystalline substrate with the first solution to deposit a first layer thereon while simultaneously contacting a second auxiliary substrate with the second solution, and then contacting the monocrystalline with the second solution to deposit a second layer thereon.

Abstract: The invention relates to a method in which a system of layers with a contact layer of gallium arsenide is formed epitaxially. In a second epitaxy treatment a layer of gallium aluminum arsenide is formed selectively. In order not to form the latter layer on the contact layer of gallium arsenide, the latter is shielded from gallium aluminum arsenide by means of a masking layer having a composition which differs from that of the layer to be provided selectively, so that the masking layer can afterwards be removed selectively.

Abstract: In a method of providing a layer of semiconductor material on a flat side of a substrate from a solution which contains the semiconductor material, the substrate is provided in a recess of a substrate holder which closes the lower side of a reservoir containing the solution. By a relative displacement of the reservoir relative to the substrate holder, the said flat side of the substrate is moved below or away from the solution present in the reservoir. The flat side of the substrate is brought at a desired height relative to the lower side of the reservoir, solution from the reservoir is provided on the substrate and when the reservoir is removed relative to the substrate a quantity of solution of an adjustable height is left on the substrate.