Patents by Inventor Willem Walrave

Willem Walrave has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5981389
    Abstract: Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.
    Type: Grant
    Filed: November 25, 1997
    Date of Patent: November 9, 1999
    Assignee: U.S. Philips Corporation
    Inventors: Teunis J. Vink, Willem Walrave
  • Patent number: 5883398
    Abstract: A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon with a concentration of less than 0.1 at. %. Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.
    Type: Grant
    Filed: November 25, 1997
    Date of Patent: March 16, 1999
    Assignee: U.S. Philips Corporation
    Inventors: Teunis J. Vink, Willem Walrave
  • Patent number: 5751016
    Abstract: A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon with a concentration of less than 0.1 at. %.Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.
    Type: Grant
    Filed: February 14, 1996
    Date of Patent: May 12, 1998
    Assignee: U.S. Philips Corporation
    Inventors: Teunis J. Vink, Willem Walrave
  • Patent number: 5689319
    Abstract: In an LCD internal reflections are reduced by giving the inner side of a metal pattern functioning, for example as a light shield (black matrix) a porous structure. The porous structure is obtained by means of a sputtering process in which the sputtering pressure is increased for providing the porous sub-layer, while the layer is etched and/or oxidized to obtain a satisfactory density.
    Type: Grant
    Filed: June 11, 1996
    Date of Patent: November 18, 1997
    Assignee: U.S. Philips Corporation
    Inventors: Teunis J. Vink, Willem Walrave
  • Patent number: 5592316
    Abstract: In an LCD internal reflections are reduced by giving the inner side of a metal pattern functioning, for example as a light shield (black matrix) a porous structure. The porous structure is obtained by means of a sputtering process in which the sputtering pressure is increased for providing the porous sub-layer, while the layer is etched and/or oxidized to obtain a satisfactory density.
    Type: Grant
    Filed: September 2, 1993
    Date of Patent: January 7, 1997
    Assignee: U.S. Philips Corporation
    Inventors: Teunis J. Vink, Willem Walrave