Patents by Inventor Willi R. Bohm

Willi R. Bohm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for the production of self-adjusted bipolar transistor structures having a reduced extrinsic base resistance
    Patent number: 4755476
    Abstract: Self-adjusted bipolar transistors having reduced extrinsic base resistance are produced by forming an emitterterminal from a polysilicon layer structure and etching free the polysilicon layer structure using the emitter layer structure as a mask. Sidewall insulating layers are provided with a metallically conductive layer. This layer is self-adjusting in relation to the emitter zone and surrounds the emitter in an annular formation. The structure improves the foursided base wiring around the emitter and is used in the production of highly integrated bipolar circuits.
    Type: Grant
    Filed: November 17, 1986
    Date of Patent: July 5, 1988
    Assignee: Siemens Aktiengesellschaft
    Inventors: Willi R. Bohm, Hans-Christian Schaber