Abstract: A catalytic reactor is provided comprising a plurality of first flow channels including a catalyst for a first reaction; a plurality of second flow channels arranged alternately with the first flow channels; adjacent first and second flow channels being separated by a divider plate (13a, 13b), and a distributed temperature sensor such as an optical fiber cable (19). The distributed temperature sensor may be located within the divider plate, or within one or 10 more of the flow channels.

Abstract: A catalytic reactor is provided comprising a plurality of first flow channels including a catalyst for a first reaction; a plurality of second flow channels arranged alternately with the first flow channels; adjacent first and second flow channels being separated by a divider plate (13a, 13b), and a distributed temperature sensor such as an optical fibre cable (19). The distributed temperature sensor may be located within the divider plate, or within one or 10 more of the flow channels.

Abstract: A semiconductor structure and method of manufacturing that has integrally-formed enhanced thermal management. During operation of a semiconductor device, electron flow between the source and the drain creates localized heat generation. A containment gap is formed by selectively removing a portion of the back side of the semiconductor device substrate directly adjacent to a localized heat generation area. A thermal management material is filled in the containment gap. This thermal management material enhances the thermal management of the semiconductor device by thermally coupling the localized heat generation area to a heat sink. The thermal management material may be a Phase Change Material (PCM) having a heat of fusion effective for absorbing heat generated in the localized heat generation area by the operation of the semiconductor device for reducing a peak operating temperature of the semiconductor device.

Abstract: A right and left hand retractable wheel carriage for a removable vehicle bench seat opposite end latching mechanism. Each carriage includes mounting brackets, caster brackets interconnected by a link, associated casters, and a suitable spring for urging the casters apart and into engagement with the vehicle floor to prevent the casters from rattling during operation of the vehicle. Once the seat's latching mechanism is released, the spring forces the casters into a vertical orientation to thereby lift the bench seat to facilitate manually rolling it out of the vehicle, and then along the ground or floor.

Abstract: Single crystals are conveniently produced by directional solidification of a liquid body under a pressurized atmosphere and, preferably, under a liquid encapsulating layer to minimize loss due to volatilization. Such fabrication entails a concern with internal stress in a grown crystal in the interest, e.g., of minimization of breakage of wafers cut from a crystal. According to the invention, minimization of stress is accomplished by means of a post-growth annealing step during which pressure is reduced substantially and, in particular, preferably to a pressure which does not exceed 50 percent of a pressure at which a constituent of the liquid body volatilizes.The method may be applied for producing single crystals of semiconductor materials as may be used as device substrates. In particular, the method is beneficial, e.g., for producing high-quality doped or undoped InP, GaP, and GaAs single crystals.

Abstract: Fabrication of single crystals of III-V semiconductor materials such as, e.g., indium phosphide by pulling from a melt may be hampered by twin formation. It has been discovered that twin formation is prevented by adjusting processing parameters such as, e.g., melt temperature, rotation rate, thermal gradients, and pull rate so as to limit rate of diameter enlargement of a boule. Specifically, diameter enlargement preferably does not exceed 0.3577 times the increase in length of a boule being pulled.

Abstract: Magnetic garnet compositions grown from a novel flux comprising a mixture of Li.sub.2 MoO.sub.4 and R.sub.2 (MoO.sub.4).sub.3 wherein R represents yttrium or a rare earth element having an atomic number from 62 to 71 have appropriate magnetic properties for use in bubble domain devices. Items produced are uniform in composition and may be of submicron thickness.