Abstract: There is disclosed a projector arranged to project a light pattern. The projector comprises a spatial light modulator and a light source. The spatial light modulator has an array of pixels arranged to display a phase pattern. The array of pixels may be a substantially planar array of pixels. Each pixel comprises liquid crystals having a director rotatable in a plane of rotation between a first direction and a second direction. The light source is arranged to illuminate the array of pixels with polarised light such that the light is spatially-modulated in accordance with the phase pattern to form the light pattern. It may be said that the light pattern corresponds to the phase pattern. The angle of incidence of the light on the array of pixels is greater than zero and the light is s-polarised. The first direction is parallel to the polarisation direction of the light. The second direction is in the plane of incidence.

Abstract: There is disclosed herein a liquid crystal on silicon spatial light modulator, “LCoS SLM”, device arranged for in-plane switching. The LCoS SLM device comprises: a silicon backplane (1501); a transparent substrate (1581); a liquid crystal layer (1571); an electrode structure (1505, 1507) and a reflective component (1561, 1551). The liquid crystal layer (1571) is interposed between the silicon backplane (1501) and the transparent substrate (1581). The electrode structure (1505, 1507) is formed on the silicon backplane (1501) for generating an electric field in the liquid crystal layer (1571). The electric field is substantially parallel to the silicon backplane (1501). The reflective component (1551, 1561) is opposing the transparent substrate (1581).

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.

Abstract: There is disclosed herein a liquid crystal on silicon spatial light modulator, “LCoS SLM”, device arranged for in-plane switching. The LCoS SLM device comprises: a silicon backplane (1501); a transparent substrate (1581); a liquid crystal layer (1571); an electrode structure (1505, 1507) and a reflective component (1561, 1551). The liquid crystal layer (1571) is interposed between the silicon backplane (1501) and the transparent substrate (1581). The electrode structure (1505, 1507) is formed on the silicon backplane (1501) for generating an electric field in the liquid crystal layer (1571). The electric field is substantially parallel to the silicon backplane (1501). The reflective component (1551, 1561) is opposing the transparent substrate (1581).

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.

Abstract: A photovoltaic device comprises a PIN structure in which a p-type hole transporting layer (2) is carried by a substrate (1) and a perovskite layer (3) and an n-type electron transporting layer (4) are arranged in sequence on the p-type layer. A light transmissive electrically conductive layer (9) is provided on top of the n-type electron transporting layer to form a light receiving top surface. Between the n-type electron transporting layer and the light transmissive conductive layer there is provided a structure comprising two inorganic electrically insulative layers (6, 8) having a layer of a conductive material (7) therebetween, wherein the two inorganic electrically insulative layers comprise a material having a band gap of greater than 4.5 eV and the layer of a conductive material comprises a material having a band gap of less than the band gap of the electrically insulative layers, wherein each electrically insulative layer forms a type-1 offset junction with the layer of conductive material.

Abstract: There is disclosed a projector arranged to project a light pattern. The projector comprises a spatial light modulator and a light source. The spatial light modulator has an array of pixels arranged to display a phase pattern. The array of pixels may be a substantially planar array of pixels. Each pixel comprises liquid crystals having a director rotatable in a plane of rotation between a first direction and a second direction. The light source is arranged to illuminate the array of pixels with polarised light such that the light is spatially-modulated in accordance with the phase pattern to form the light pattern. It may be said that the light pattern corresponds to the phase pattern. The angle of incidence of the light on the array of pixels is greater than zero and the light is s-polarised. The first direction is parallel to the polarisation direction of the light. The second direction is in the plane of incidence.

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.

Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metal cations M; one or more second cations A?; one or more first anions X and one or more second anions X?.

Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX 3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metalcations M; one or more second cations A?; one or more first anions X and one or more second anions X?.

Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metal cations M; one or more second cations A?; one or more first anions X and one or more second anions X?.

Abstract: An imaging device includes a projection optic arranged to form a virtual image of an object. The imaging device further includes a first diffuser positioned a first distance from the virtual projection optic and a second diffuser positioned a second distance from the virtual projection optic. The controller is arranged to control the first and second diffuser to make the real image visible on one of the diffusers.

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.

Abstract: A LCOS routing device, comprising: an optical input and plurality of optical outputs; a spatial light modulator (SLM) between said input and output, for displaying a kinoform; a data processor, configured to provide kinoform data for displaying said kinoform on said SLM. Said data processor inputs routing and calculates said kinoform data. Said data processor calculates kinoform data by: determining an initial phase pattern for said kinoform; calculating a replay field of said phase pattern; modifying an amplitude component of said replay field, retaining a phase component of said replay field to provide an updated replay field; performing a space-frequency transform on said updated replay field to determine an updated phase pattern for said kinoform; and repeating said calculating and updating of said replay field and said performing of said space-frequency transform until said kinoform for display is determined; and outputting said kinoform data for display on said LCOS SLM.

Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.

Abstract: This invention relates to methods and apparatus for routing light beams in telecommunications devices using holographic techniques, in particular by displaying kinoforms on Liquid Crystal on Silicon devices. At least one optical input to receives an input beam. A plurality of optical outputs and a spatial light modulator (SLM) on an optical path between said optical input and said optical outputs are provided, and a driver for said SLM to display a kinoform on said SLM diffracts said input beam into an output beam comprising a plurality of diffraction orders, wherein a routed one of said diffraction orders is directed to at least one selected said optical output; said apparatus is configured to modify a wavefront of said output beam to reduce a coupling of said output beam into said selected optical output; and said kinoform is adapted to compensate for said wavefront modification to compensate for said reduced coupling.

Abstract: There is provided a photovoltaic device that comprises a front electrode, a back electrode, and disposed between the front electrode and the back electrode, an electron transporter region comprising an electron transporter layer; a hole transporter region comprising a hole transporter layer, and a layer of perovskite semiconductor disposed between and in contact with the electron transporter layer and the hole transporter layer. The electron transporter region is nearest to the front electrode and the hole transporter region is nearest to the back electrode, and the electron transporter layer comprises any of a chalcogenide material and an organic material and has a thickness of at least 2 nm.

Abstract: A LCOS routing device, comprising: an optical input and plurality of optical outputs; a spatial light modulator (SLM) between said input and output, for displaying a kinoform; a data processor, configured to provide kinoform data for displaying said kinoform on said SLM. Said data processor inputs routing and calculates said kinoform data. Said data processor calculates kinoform data by: determining an initial phase pattern for said kinoform; calculating a replay field of said phase pattern; modifying an amplitude component of said replay field, retaining a phase component of said replay field to provide an updated replay field; performing a space-frequency transform on said updated replay field to determine an updated phase pattern for said kinoform; and repeating said calculating and updating of said replay field and said performing of said space-frequency transform until said kinoform for display is determined; and outputting said kinoform data for display on said LCOS SLM.