Abstract: Apparatus for electrostatic clamping of a semiconductor wafer in a vacuum processing chamber wherein an ion beam is applied to the wafer. In a first embodiment, the apparatus includes an electrically conductive platen, a resilient, thermally-conductive dielectric layer affixed to the platen and one or more conductive wires positioned on the clamping surface. A clamping voltage is applied between the wires and the platen to firmly clamp the wafer against the clamping surface and depress the wires into the resilient dielectric layer. In a second embodiment, a three-phase wafer clamping apparatus includes a platen divided into three electrically isolated sections. One phase of a three-phase clamping voltage is connected to each of the platen sections. In the three-phase configuration, the wafer charging current is very small, and the clamping force is essentially constant. In a third embodiment, a six phase wafer clamping apparatus includes a platen having six symmetrically located electrodes.

Abstract: Apparatus for electrostatic clamping of a semiconductor wafer in a vacuum processing chamber wherein an ion beam is applied to the wafer. In a first embodiment, the apparatus includes an electrically conductive platen, a resilient, thermally-conductive dielectric layer affixed to the platen and one or more conductive wires positioned on the clamping surface. A clamping voltage is applied between the wires and the platen to firmly clamp the wafer against the clamping surface and depress the wires into the resilient dielectric layer. In a second embodiment, a three-phase wafer clamping apparatus includes a platen divided into three electrically isolated sections. One phase of a three-phase clamping voltage is connected to each of the platen sections. In the three-phase configuration, the wafer charging current is very small, and the clamping force is essentially constant. In a third embodiment, a six phase wafer clamping apparatus includes a platen having six symmetrically located electrodes.

Abstract: Apparatus for electrostatic clamping of a semiconductor wafer in a vacuum processing chamber wherein an ion beam is applied to the wafer. In a first embodiment, the apparatus includes an electrically conductive platen, a resilient, thermally-conductive dielectric layer affixed to the platen and one or more conductive wires positioned on the clamping surface. A clamping voltage is applied between the wires and the platen to firmly clamp the wafer against the clamping surface and depress the wires into the resilient dielectric layer. In a second embodiment, a three-phase wafer clamping apparatus includes a platen divided into three electrically isolated sections. One phase of a three-phase clamping voltage is connected to each of the platen sections. In the three-phase configuration, the wafer charging current is very small, and the clamping force is essentially constant. In a third embodiment, a six phase wafer clamping apparatus includes a platen having six symmetrically located electrodes.

Abstract: A heater for a thermionic cathode for producing an electron beam includes a central wide and a hollow cylindrical conductor with the wire disposed coaxially thereof. The wire and the cylindrical conductor are electrically connected at one end of the heater and at the other end include means for connecting to a power source. Equal electrical currents thus flow in opposite directions in the wire and the cylindrical conductor so that the magnetic fields produced thereby tending to deflect the electron beam cancel each other.

Abstract: This disclosure is concerned with the use of fine line converged electron beams of high aspect ratio for effecting physical, chemical, mechanical and other changes in the surface of objects, and also volume effects, including applications, for example, to semiconductor and other materials surface modification technology, annealing, welding, etching, polishing, cutting, curing and other surface and volume alteration.

Abstract: This disclosure is concerned with the use of fine line converged electron beams of high aspect ratio for effecting physical, chemical, mechanical and other changes in the surface of objects, and also volume effects, including applications, for example, to semiconductor and other materials surface modification technology, annealing, welding, etching, polishing, cutting, curing and other surface and volume alteration.

Abstract: This disclosure deals with novel techniques for generating longitudinal strips of energetic electron beams through concentric slotted constructions, being quite adaptable for the generation of multiple beams in different directions that are of very narrow angular transverse extent, as for purposes of line irradiation of articles passing the beams, though the techniques herein disclosed are also useful in other applications of electron beam irradiation.