Patents by Inventor William A. Lanford

William A. Lanford has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6057223
    Abstract: A copper conductor is formed which is included as a component in microelectronic devices. The conductor is formed by forming a metal layer on the surface of a microelectronic substrate, forming a copper layer on the metal layer, and annealing the metal and copper layers. The annealing step diffuses at least some of the metal layer through the copper layer to the surface thereof where the diffused metal forms a protective metal oxide at the surface of the copper layer. As a result, the metal oxide layer passivates the copper layer.
    Type: Grant
    Filed: February 10, 1998
    Date of Patent: May 2, 2000
    Assignee: The Research Foundation of State University of New York
    Inventors: William A. Lanford, Wei Wang, Peijun Ding
  • Patent number: 5959358
    Abstract: A process for preparing an oxidation resistant, electrically conductive copper layer on a substrate, and copper layers so formed, are disclosed. A copper layer is deposited onto the surface of a substrate, and subsequently annealed. The copper layer includes magnesium in an amount sufficient to form an inert magnesium oxide layer at the surface of the copper layer upon annealing.
    Type: Grant
    Filed: April 22, 1997
    Date of Patent: September 28, 1999
    Assignee: Research Foundation of State University of New York
    Inventors: William A. Lanford, Peijun Ding
  • Patent number: 5766379
    Abstract: A copper conductor is formed which is included as a component in microelectronic devices. The conductor is formed by forming a metal layer on the surface of a microelectronic substrate, forming a copper layer on the metal layer, and annealing the metal and copper layers. The annealing step diffuses at least some of the metal layer through the copper layer to the surface thereof where the diffused metal forms a protective metal oxide at the surface of the copper layer. As a result, the metal oxide layer passivates the copper layer.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: June 16, 1998
    Assignee: The Research Foundation of State University of New York
    Inventors: William A. Lanford, Wei Wang, Peijun Ding
  • Patent number: 5689112
    Abstract: Surface contamination of silicon wafers is detected by a combined beam-deflecting magnet and magnetic spectrometer system. Heavy ions are directed onto the surface of a silicon wafer through the beam-deflecting magnet, and ions back-scattered from contaminants in the surface of the wafer pass through the magnetic spectrometer onto a focal-plane detector. One or more Einzel lenses prevent ions back-scattered from the silicon in the wafer from reaching the detector.
    Type: Grant
    Filed: April 12, 1996
    Date of Patent: November 18, 1997
    Inventors: Harald A. Enge, William A. Lanford
  • Patent number: 5622608
    Abstract: A process for preparing an oxidation resistant, electrically conductive copper layer on a substrate, and copper layers so formed, are disclosed. A copper layer is deposited onto the surface of a substrate, and subsequently annealed. The copper layer includes magnesium in an amount sufficient to form an inert magnesium oxide layer at the surface of the copper layer upon annealing.
    Type: Grant
    Filed: May 5, 1994
    Date of Patent: April 22, 1997
    Assignee: Research Foundation of State University of New York
    Inventors: William A. Lanford, Peijun Ding