Abstract: Methods and systems for performing optical measurements of semiconductor structures while modulating both an electric field within one or more structures under measurement and the measurement light employed to measure the one or more structures are presented herein. Spectroscopic ellipsometry, spectroscopic reflectometry, and angle resolved spectroscopic reflectometry measurements are enhanced by modulation of the electric field of the structures under measurement. The modulation of the electric field changes the dielectric function of the materials under measurement. Measurements are performed with an enriched data set including measurement signals collected from one or more structures under time varying optical and electric field conditions. This reduces parameter correlation among floating measurement parameters and improves measurement accuracy.

Abstract: Asymmetry metrology is performed using at least a portion of Mueller matrix elements, including, e.g., the off-diagonal elements of the Mueller matrix. The Mueller matrix may be generated using, e.g., a spectroscopic or angle resolved ellipsometer that may include a rotating compensator. The Mueller matrix is analyzed by fitting at least a portion of the elements to Mueller matrix elements calculated using a rigorous electromagnetic model of the sample or by fitting the off-diagonal elements to a calibrated linear response. The use of the Mueller matrix elements in the asymmetry measurement permits, e.g., overlay analysis using in-chip devices thereby avoiding the need for special off-chip targets.

Abstract: The process of modeling a complex two-dimensional periodic structure is improved by selectively truncating the Fourier expansion used in the calculation of resulting scatter signature from the model. The Fourier expansion is selectively truncated by determining the contribution for each harmonic order in the Fourier transform of the permittivity function and retaining the harmonic orders with a contribution that is above a threshold. The Fourier space may be compressed so that only the selected harmonic orders are used, thereby reducing the required memory and calculation times. The compressed Fourier space may be used in a real-time analysis of a sample or to generate a library that is used in the analysis of a sample.

Abstract: Asymmetry metrology is performed using at least a portion of Mueller matrix elements, including, e.g., the off-diagonal elements of the Mueller matrix. The Mueller matrix may be generated using, e.g., a spectroscopic or angle resolved ellipsometer that may include a rotating compensator. The Mueller matrix is analyzed by fitting at least a portion of the elements to Mueller matrix elements calculated using a rigorous electromagnetic model of the sample or by fitting the off-diagonal elements to a calibrated linear response. The use of the Mueller matrix elements in the asymmetry measurement permits, e.g., overlay analysis using in-chip devices thereby avoiding the need for special off-chip targets.

Abstract: The process of modeling a complex two-dimensional periodic structure is improved by selectively truncating the Fourier expansion used in the calculation of resulting scatter signature from the model. The Fourier expansion is selectively truncated by determining the contribution for each harmonic order in the Fourier transform of the permittivity function and retaining the harmonic orders with a contribution that is above a threshold. The Fourier space may be compressed so that only the selected harmonic orders are used, thereby reducing the required memory and calculation times. The compressed Fourier space may be used in a real-time analysis of a sample or to generate a library that is used in the analysis of a sample.

Abstract: A normal incidence reflectometer includes a rotatable analyzer/polarizer for measurement of a diffracting structure. Relative rotation of the analyzer/polarizer with respect to the diffracting structure permits analysis of the diffracted radiation at multiple polarity orientations. A spectograph detects the intensity of the spectral components at different polarity orientations. Because the normal incidence reflectometer uses normally incident radiation and an analyzer/polarizer that rotates relative to the diffracting structure, or vice-versa, the orientation of the diffracting structure does not affect the accuracy of the measurement. Thus, the sample holding stage may use X, Y, and Z, as well as r-? type movement and there is no requirement that the polarization orientation of the incident light be aligned with the grating of the diffraction structure.

Abstract: A model of a sample with one or more films that overlie a complicated structure can be produced using a first portion that models the physical characteristics of the film(s) and a second portion that does not attempt to model the physical characteristics of the underlying structure, but instead models the affect of the underlying structure on incident light. By way of example, the second portion of the model may use a one-dimensional periodic pattern to model a complicated two-dimensional periodic pattern. A characteristic, such as thickness, of the film(s) may be measured using the model. The results may be verified by the linear relationship of ratios between a plurality of measured locations on the sample and associated locations on the sample that do not have the underlying structures.

Abstract: A normal incidence reflectometer includes a rotatable analyzer/polarizer, which permits measurement of a diffracting structure. Relative rotation of the analyzer/polarizer with respect to the diffracting structure permits analysis of the diffracted radiation at multiple polarity orientations. A spectograph detects the intensity of the spectral components at different polarity orientations. Because the normal incidence reflectometer uses normally incident radiation and an analyzer/polarizer that rotates relative to the diffracting structure, or vice-versa, the orientation of the diffracting structure does not affect the accuracy of the measurement. Thus, the sample holding stage may use X, Y, and Z, as well as r-? type movement and there is no requirement that the polarization orientation of the incident light be aligned with the grating of the diffraction structure.

Abstract: A process of modeling a diffracting structure with normally incident radiation and the radiation diffracted from the structure includes constructing an optical model of the diffracting structure and calculating spectral information for the optical model based on a plurality of diffracted orders using either the positive or negative of each of said plurality of diffracted orders and the zero order. The process may be used to measure a diffracting structure, in which spectral information from a diffraction structure is extracted and compared to the calculated extracted information. The optical model is adjusted and the spectral information recalculated until an adequate fit is found, at which time it is known that the optical model accurately describes the actual diffraction grating. The process may be used with any normally incident metrology device, such as a reflectometer, ellipsometer and scatterometer.

Abstract: A prealigner includes a light source and light detector that detects the position of the periphery of a substrate as a rotary chuck rotates the substrate. The prealigner includes a processor that receives and records the peripheral position of the substrate relative to the angular position of the substrate. The prealigner determines the center of the substrate by fitting a curve to the recorded data set, after eliminating any spikes in the data, e.g., caused by the notch or parts of the chuck. The center may then be easily and accurately determined using the amplitude and phase of the fitted curve. The position of the notch is determined by fitting a curve to the data set for the notch and determining the derivative of the curve. The mid-point of the notch and the offset error of the apex of the notch from the mid-point are calculated based on the derivative.

Abstract: An instrument and methods are used to determine film layer thicknesses, optical constant spectra, and elemental concentrations of a sample substrate overlaid with a single or multiple films. The instrument measures the sample substrate's absolute reflectance and ellipsometric parameters over a first set of wavelengths to determine film layer thicknesses and optical constants of the film layers over the first set of wavelengths. The instrument also measures the sample substrate's absolute reflectance or transmittance over a second set of wavelengths. Based on these measurements and analysis, the instrument determines at least one element's concentration in at least one film layer of the sample substrate.