Abstract: A method for bonding a pair of silicon wafers (2,3) together to form a semiconductor wafer (1) wherein an interface surface (5) of one of the silicon wafers (3) is pretreated by an ion implantation or diffusion process prior to bonding of the silicon wafers (2,3). The method includes subjecting the pretreated interface surface (5) to an initial anneal step at approximately 700° C. for 60 minutes for recrystallising the interface surface, and then subjecting both interface surfaces (4,5) to two cleaning steps with respective first and second cleaning solutions, neither of which contain sulphuric acid. The first cleaning solution comprises hydrogen peroxide, ammonia and water, while the second cleaning solution comprises hydrofluoric acid and water. The respective interface surfaces (4,5) are rinsed with water after each cleaning step, and the silicon wafers (2,3) are bonded by anneal bonding at a temperature of the order of 1,150° C. for approximately 60 minutes.

Abstract: A method for bonding a pair of silicon wafers (2, 3) together to form a semiconductor wafer (1) wherein an interface surface (5) of one of the silicon wafers (3) is pretreated by an ion implantation or diffusion process prior to bonding of the silicon wafers (2, 3). The method includes subjecting the pretreated interface surface (5) to an initial anneal step at approximately 700° C. for 60 minutes for recrystallising the interface surface, and then subjecting both interface surfaces (4, 5) to two cleaning steps with respective first and second cleaning solutions, neither of which contain sulphuric acid. The first cleaning solution comprises hydrogen peroxide, ammonia and water, while the second cleaning solution comprises hydrofluoric acid and water. The respective interface surfaces (4, 5) are rinsed with water after each cleaning step, and the silicon wafers (2, 3) are bonded by anneal bonding at a temperature of the order of 1,150° C. for approximately 60 minutes.

Abstract: An integrated circuit with an interface between a semiconductor layer (having a selected region) and a second layer has a barrier with a gettering effect that 1) substantially circumscribes the selected region and 2) extends to the interface. Despite the fact that its gettering effect extends to the interface, the barrier does not penetrate the second layer.

Abstract: A semiconductor substrate (1) comprising an SOI (2) formed therein. The semiconductor substrate (1) comprises first and second wafers (4,6) which are directly bonded together along a bond interface (9). Prior to bonding the wafers (4,6), a portion (15) of the second wafer (6) is ion implanted to form a p+ region for facilitating selective etching thereof to form a buried cavity (16), in which a buried insulating layer is subsequently formed under a portion (10) of the first wafer (4) for forming the SOI (2). After bonding of the first and second wafers (4,6) a communicating opening (20) is etched through the first wafer (4) to the bond interface (9), and the selectively etchable portion (15) is etched through the communicating opening (20) to form the buried cavity (16). The buried cavity (16) is then filled with deposited oxide to form the buried insulating layer (11).

Abstract: A method for forming an isolation filled trench (25) in a silicon layer (21) of an SOI structure (20). The trench (25) is relieved adjacent its open mouth (30) in order to displace the commencement of bridging of the trench (25) with the filling material, to a level (36) well below a first surface (27) of the silicon layer (21) for in turn displacing voids (35) from the open mouth (30) into the trench (25) below the level (36). The trench may be relieved by forming tapered portions (40) in the side wells (29) adjacent the open mouth (30), and/or by relieving one or more lining layers (32) in the trench (25) adjacent the open mouth (30) to form tapered portion (52) and (53). Instead of relieving the trench (25) by tapering the side walls (29) relieving recesses may be formed into the first surface (27) of the silicon layer (21) adjacent the open mouth (30).

Abstract: A method for bonding a pair of silicon wafers (2,3) together to form a semiconductor wafer (1) wherein an interface surface (5) of one of the silicon wafers (3) is pretreated by an ion implantation or diffusion process prior to bonding of the silicon wafers (2,3). The method includes subjecting the pretreated interface surface (5) to an initial anneal step at approximately 700° C. for 60 minutes for recrystallising the interface surface, and then subjecting both interface surfaces (4,5) to two cleaning steps with respective first and second cleaning solutions, neither of which contain sulphuric acid. The first cleaning solution comprises hydrogen peroxide, ammonia and water, while the second cleaning solution comprises hydrofluoric acid and water. The respective interface surfaces (4,5) are rinsed with water after each cleaning step, and the silicon wafers (2,3) are bonded by anneal bonding at a temperature of the order of 1,150° C. for approximately 60 minutes.

Abstract: A programmable system for controlling the refrigeration of a transportable container is provided. The system is programmed by insertion of a card into the control system so as cause a control program to be transferred from the card to a memory within the control system.

Abstract: An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.

Abstract: An article of manufacture which is a combination container, cigarette lighter, candle holder, and the like; the container being suitable to hold liquids, powders, cigarettes or other substances, and the article being made in either of various different models so to suit specific various applications, and wherein the container are all decorated by removable decorative inserts mounted within the container.