Abstract: Initial source shapes for source mask optimization are determined based on a layout of the lithographic mask. In one approach, a layout of a lithographic mask is received. Different sections of the lithographic mask, referred to as clips, are selected. These clips are applied to a machine learning model which infers source shapes from the clips. The inferred source shapes are used as the initial source shapes for source mask optimization.

Abstract: Initial source shapes for source mask optimization are determined based on a layout of the lithographic mask. In one approach, a layout of a lithographic mask is received. Different sections of the lithographic mask, referred to as clips, are selected. These clips are applied to a machine learning model which infers source shapes from the clips. The inferred source shapes are used as the initial source shapes for source mask optimization.

Abstract: Masks for microlithography apparatus, methods for making such masks, and methods for exposing photosensitive materials to form arrays of microfeatures on semiconductor wafers using such masks. In one embodiment, a method of making a mask comprises forming a mask layer on a substrate and identifying a first opening in the mask layer corresponding to a first feature site at which an intensity of the radiation at a focal zone is less than the intensity of the radiation at the focal zone for a second feature site corresponding to a second opening in the mask. The second opening is adjacent or at least proximate the first opening. The method can further include forming a first surface at the first opening and a second surface at the second opening such that radiation passing through the second opening constructively interferes with radiation passing through the first opening at the focal zone.

Abstract: The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.

Abstract: Methods and systems for lithographic simulation and verification comprising a process in the frequency domain or in the spatial domain of calculating intensity at a location (x, y) for a number of defocus values. In addition, evaluating the intensity calculation result to determine if the intensity level will result in the mask pattern being written onto a wafer. The verification process may be calculated in the spatial domain or in the frequency domain. The calculations may be done such that full focus window calculations may be obtained by isolating the defocus parameter “z” in the calculations.

Abstract: Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of a rectangular target geometry may comprise predicting a contour of an image to be produced in an optical proximity correction simulation of a target geometry. The target geometry may comprise a plurality of line segments, each line segment of the plurality having one evaluation point defined thereon. The method may further comprise shifting at least one evaluation point to an associated point on the predicted contour of the image.

Abstract: Several embodiments of photolithography systems and associated methods of selective die exposure are disclosed herein. In one embodiment, a method for exposing a microelectronic substrate in a photolithography system includes producing an illumination radiation from a radiation source and identifying a field on the microelectronic substrate to be exposed. The field is partitioned into a first region discrete from a second region. The method further includes inhibiting the illumination radiation to expose the first region while simultaneously exposing the second region to the illumination radiation.

Abstract: Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of a rectangular target geometry may comprise predicting a contour of an image to be produced in an optical proximity correction simulation of a target geometry. The target geometry may comprise a plurality of line segments, each line segment of the plurality having one evaluation point defined thereon. The method may further comprise shifting at least one evaluation point to an associated point on the predicted contour of the image.

Abstract: Masks for microlithography apparatus, methods for making such masks, and methods for exposing photosensitive materials to form arrays of microfeatures on semiconductor wafers using such masks. In one embodiment, a method of making a mask comprises forming a mask layer on a substrate and identifying a first opening in the mask layer corresponding to a first feature site at which an intensity of the radiation at a focal zone is less than the intensity of the radiation at the focal zone for a second feature site corresponding to a second opening in the mask. The second opening is adjacent or at least proximate the first opening. The method can further include forming a first surface at the first opening and a second surface at the second opening such that radiation passing through the second opening constructively interferes with radiation passing through the first opening at the focal zone.

Abstract: Methods are disclosed for defining evaluation points for use in optical proximity correction of a rectangular target geometry. A method for defining evaluation points for use in optical proximity correction of a rectangular target geometry may comprise predicting a contour of an image to be produced in an optical proximity correction simulation of a target geometry. The target geometry may comprise a plurality of line segments, each line segment of the plurality having one evaluation point defined thereon. The method may further comprise shifting at least one evaluation point to an associated point on the predicted contour of the image.

Abstract: The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.

Abstract: Masks for microlithography apparatus, methods for making such masks, and methods for exposing photosensitive materials to form arrays of microfeatures on semiconductor wafers using such masks. In one embodiment, a method of making a mask comprises forming a mask layer on a substrate and identifying a first opening in the mask layer corresponding to a first feature site at which an intensity of the radiation at a focal zone is less than the intensity of the radiation at the focal zone for a second feature site corresponding to a second opening in the mask. The second opening is adjacent or at least proximate the first opening. The method can further include forming a first surface at the first opening and a second surface at the second opening such that radiation passing through the second opening constructively interferes with radiation passing through the first opening at the focal zone.

Abstract: The invention includes semiconductor constructions containing optically saturable absorption layers. An optically saturable absorption layer can be between photoresist and a topography, with the topography having two or more surfaces of differing reflectivity relative to one another. The invention also includes methods of patterning photoresist in which a saturable absorption layer is provided between the photoresist and a topography with surfaces of differing reflectivity, and in which the differences in reflectivity are utilized to enhance the accuracy with which an image is photolithographically formed in the photoresist.

Abstract: Masks for microlithography apparatus, methods for making such masks, and methods for exposing photosensitive materials to form arrays of microfeatures on semiconductor wafers using such masks. In one embodiment, a method of making a mask comprises forming a mask layer on a substrate and identifying a first opening in the mask layer corresponding to a first feature site at which an intensity of the radiation at a focal zone is less than the intensity of the radiation at the focal zone for a second feature site corresponding to a second opening in the mask. The second opening is adjacent or at least proximate the first opening. The method can further include forming a first surface at the first opening and a second surface at the second opening such that radiation passing through the second opening constructively interferes with radiation passing through the first opening at the focal zone.

Abstract: Methods and systems for lithographic simulation and verification comprising a process in the frequency domain or in the spatial domain of calculating intensity at a location (x, y) for a number of defocus values. In addition, evaluating the intensity calculation result to determine if the intensity level will result in the mask pattern being written onto a wafer. The verification process may be calculated in the spatial domain or in the frequency domain. The calculations may be done such that full focus window calculations may be obtained by isolating the defocus parameter “z” in the calculations.

Abstract: Imager pixel arrays and methods for forming imager pixel arrays. An image sensor pixel includes a photosensor and a waveguide grating resonance filter formed over the photosensor. The waveguide grating resonance filter is configured to pass light to the photosensor in a wavelength band and to block light outside of the wavelength band. The waveguide grating resonance filter includes a grating material having a first refractive index and arranged in a grating pattern with a grating pitch, and has an effective refractive index that is a function of the first refractive index. A combination of the grating pitch and the effective refractive index is selected to correspond to the wavelength band.

Abstract: Masks for microlithography apparatus, methods for making such masks, and methods for exposing photosensitive materials to form arrays of microfeatures on semiconductor wafers using such masks. In one embodiment, a method of making a mask comprises forming a mask layer on a substrate and identifying a first opening in the mask layer corresponding to a first feature site at which an intensity of the radiation at a focal zone is less than the intensity of the radiation at the focal zone for a second feature site corresponding to a second opening in the mask. The second opening is adjacent or at least proximate the first opening. The method can further include forming a first surface at the first opening and a second surface at the second opening such that radiation passing through the second opening constructively interferes with radiation passing through the first opening at the focal zone.

Abstract: Methods and systems for lithographic simulation and verification comprising a process in the frequency domain or in the spatial domain of calculating intensity at a location (x, y) for a number of defocus values. In addition, evaluating the intensity calculation result to determine if the intensity level will result in the mask pattern being written onto a wafer. The verification process may be calculated in the spatial domain or in the frequency domain. The calculations may be done such that full focus window calculations may be obtained by isolating the defocus parameter “z” in the calculations.

Abstract: Several embodiments of photolithography systems and associated methods of selective die exposure are disclosed herein. In one embodiment, a method for exposing a microelectronic substrate in a photolithography system includes producing an illumination radiation from a radiation source and identifying a field on the microelectronic substrate to be exposed. The field is partitioned into a first region discrete from a second region. The method further includes inhibiting the illumination radiation to expose the first region while simultaneously exposing the second region to the illumination radiation.

Abstract: A method and structure for optimizing an optical lithography illumination source may include a shaped diffractive optical element (DOE) interposed between the illuminator and a lens during the exposure of a photoresist layer over a semiconductor wafer. The DOE may, in some instances, increase depth of focus, improve the normalized image log-slope, and improve pattern fidelity. The DOE is customized for the particular pattern to be exposed. Description and depiction of a specific DOE for a specific pattern is provided. Additionally, a pupilgram having a particular pattern, and methods for providing a light output which forms the pupilgram, are disclosed.