Patents by Inventor William A. Thore

William A. Thore has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for controlled growth of silicon carbide and structures produced by same
    Patent number: 9048166
    Abstract: A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: June 2, 2015
    Assignee: Cree, Inc.
    Inventors: Robert Tyler Leonard, Hudson M. Hobgood, William A. Thore
  • Method for controlled growth of silicon carbide and structures produced by same
    Patent number: 8377806
    Abstract: A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: February 19, 2013
    Assignee: Cree, Inc.
    Inventors: Robert Tyler Leonard, Hudson M. Hobgood, William A. Thore
  • METHOD FOR CONTROLLED GROWTH OF SILICON CARBIDE AND STRUCTURES PRODUCED BY SAME
    Publication number: 20110266556
    Abstract: A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.
    Type: Application
    Filed: April 28, 2010
    Publication date: November 3, 2011
    Applicant: Cree, Inc.
    Inventors: Robert Tyler Leonard, Hudson M. Hobgood, William A. Thore