Abstract: An exemplary embodiment of the present disclosure provides a device, a substrate and a doped material. The doped material comprises a group III metal nitride, and one of a p-type dopant or an n-type dopant. The doped material is disposed upon the substrate at a temperature below 1000° C. and comprises an increased dopant concentration. Also disclosed herein are methods for producing doped group III metal nitride produces comprising flowing a plasma comprising nitrogen from a remote plasma chamber into a growth chamber; introducing a group III metal and at least one of a p-type dopant or an n-type dopant into the growth chamber; and disposing, over a substrate at a temperature below about 1000° C., a conductive group III metal nitride product comprising an increased electrical carrier concentration.

Abstract: Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.

Abstract: Systems and methods for the rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.

Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.

Abstract: An effusion cell includes a crucible for containing material to be evaporated or sublimated, a delivery tube configured to deliver evaporated or sublimated material originating from the crucible into a chamber, a supply tube extending from the crucible, the supply tube located and configured to trap condensate originating from the evaporated or sublimated material and to deliver the condensate back to the crucible, and at least one heating element located and configured to heat material in the crucible so as to cause evaporation or sublimation of the material and flow of the evaporated or sublimated material through the delivery tube and out from the effusion cell. The effusion cell is configured such that the crucible can be filled with the material to be evaporated or sublimated without removing the effusion cell from the process vacuum chamber. Semiconductor substrate processing systems may include such effusion cells.

Abstract: A physical vapor deposition system includes a deposition chamber; a wafer support structure disposed within the deposition chamber and configured to support at least one wafer thereon, and at least one effusion cell disposed at least partially outside the deposition chamber and coupled to a wall of the deposition chamber. The at least one effusion cell is configured to generate physical vapor by evaporation or sublimation of material within the at least one effusion cell, and to inject the physical vapor into the deposition chamber through an aperture in the wall of the deposition chamber. The at least one effusion cell is configured such that the at least one effusion cell can be filled with the material to be evaporated or sublimated without removing the at least one effusion cell from the deposition chamber and without interrupting a deposition process performed using the deposition system.

Abstract: Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AlN, InN, GaN, InGaN, and AlInGaN.

Abstract: Systems and methods are disclosed for rapid growth of Group III metal nitrides using plasma assisted molecular beam epitaxy. The disclosure includes higher pressure and flow rates of nitrogen in the plasma, and the application of mixtures of nitrogen and an inert gas. Growth rates exceeding 8 ?m/hour can be achieved.

Abstract: Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AN, InN, GaN, InGaN, and AlInGaN.

Abstract: A physical vapor deposition system includes a deposition chamber; a wafer support structure disposed within the deposition chamber and configured to support at least one wafer thereon, and at least one effusion cell disposed at least partially outside the deposition chamber and coupled to a wall of the deposition chamber. The effusion cell is configured to generate physical vapor by evaporation or sublimation of material within the at least one effusion cell, and to inject the physical vapor into the deposition chamber through an aperture in the wall of the deposition chamber. The effusion cell is configured such that the effusion cell can be filled with the material to be evaporated or sublimated without removing the at least one effusion cell from the deposition chamber and without interrupting a deposition process performed using the deposition system.

Abstract: An effusion cell includes a crucible for containing material to be evaporated or sublimated, a delivery tube configured to deliver evaporated or sublimated material originating from the crucible into a chamber, a supply tube extending from the crucible, the supply tube located and configured to trap condensate originating from the evaporated or sublimated material and to deliver the condensate back to the crucible, and at least one heating element located and configured to heat material in the crucible so as to cause evaporation or sublimation of the material and flow of the evaporated or sublimated material through the delivery tube and out from the effusion cell. The effusion cell is configured such that the crucible can be filled with the material to be evaporated or sublimated without removing the effusion cell from the process vacuum chamber. Semiconductor substrate processing systems may include such effusion cells.

Abstract: Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AN, InN, GaN, InGaN, and AlInGaN.

Abstract: Metal oxide structures, devices, and fabrication methods are provided. In addition, applications of such structures, devices, and methods are provided. In some embodiments, an oxide material can include a substrate and a single-crystal epitaxial layer of an oxide composition disposed on a surface of the substrate, where the oxide composition is represented by ABO2 such that A is a lithium cation, B is a cation selected from the group consisting of trivalent transition metal cations, trivalent lanthanide cations, trivalent actinide cations, trivalent p-block cations, and combinations thereof, and O is an oxygen anion. The ABO2 can be a high purity ABO2, with less than 1 atom % each of sodium, carbon, boron, and fluorine. The ABO2 can be prepared by a liquid phase electro-epitaxy using a molten solution of a metal oxide and LiBO2.

Abstract: Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AlN, InN, GaN, InGaN, and AlInGaN.

Abstract: Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AlN, InN, GaN, InGaN, and AlInGaN.

Abstract: This invention relates to a high efficiency solar cell with a novel architecture. In one embodiment, the solar cell is comprised of a high energy gap cell stack and a dichroic mirror. The high energy gap cell stack is exposed to solar light before there is any splitting of the solar light into spectral components. Each cell in the high energy gap cell stack absorbs the light with photons of energy greater than or equal to its energy gap, i.e., the blue-green to ultraviolet portion of the solar light. Each cell in the high energy gap cell stack is transparent to and transmits light with photons of energy less than its energy gap. Spectral splitting is then performed by means of the dichroic mirror on the remaining light, i.e., the light transmitted by the high energy gap cell stack.

Abstract: A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0?x<1, 0<y?1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al1-x-yInxGayN/GaN; 0?x<1, 0<y?1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.

Abstract: This invention relates to a high efficiency solar cell with a novel architecture. In one embodiment, the solar cell is comprised of a high energy gap cell stack and a dichroic mirror. The high energy gap cell stack is exposed to solar light before there is any splitting of the solar light into spectral components. Each cell in the high energy gap cell stack absorbs the light with photons of energy greater than or equal to its energy gap, i.e., the blue-green to ultraviolet portion of the solar light. Each cell in the high energy gap cell stack is transparent to and transmits light with photons of energy less than its energy gap. Spectral splitting is then performed by means of the dichroic mirror on the remaining light, i.e., the light transmitted by the high energy gap cell stack.

Abstract: A light-emitting nitride/zinc oxide based compound semiconductor device of double heterostructure. The double-heterostructure includes a light-emitting layer formed of an Al1-x-yInxGayN; 0?x<1, 0<y?1, and x+y=0.1 to 1 compound semiconductor doped an impurity. Single or multi quantum well light-emitting active layers Al1-x-yInxGayN/GaN; 0?x<1, 0<y?1, and x+y=0.1 to 1 are positioned between p-type GaN and n-type ZnO substrates.

Abstract: Semiconductor devices formed by depositing III-nitride compounds on lithium niobate and/or lithium tantalate substrates are disclosed. Also disclosed, are semiconductor devices formed by depositing lithium niobate and/or lithium tantalate on III-Nitrides and Silicon Carbide substrates. The semiconductor devices provide good lattice matching characteristics between the substrate and the material that is deposited upon the substrate. The method of forming such semiconductor devices, which is also disclosed, enables fabrication of periodically-poled devices in a manner that is advantageous in comparison to existing technologies.