Patents by Inventor William Allan Lane

William Allan Lane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230280330
    Abstract: Embodiments of the disclosure provide various nanogap sensor designs (e.g., horizontal nanogap sensors, vertical nanogap sensors, arrays of multiple nanogap sensors, various arrangements for making electrical connections to the electrodes of nanogap sensors, etc.), as well as various methods which may be used to fabricate at least some of the proposed sensors. The nanogap sensors proposed herein may operate as molecular sensors to help identify chemical species through electrical measurements using at least a pair of electrodes separated by a nanogap.
    Type: Application
    Filed: April 28, 2023
    Publication date: September 7, 2023
    Inventors: Christophe ANTOINE, Himanshu JAIN, Matthew Thomas CANTY, Christina B. MCLOUGHLIN, Daniel Joseph LUCEY, Sinead Maire MCDERMOTT, Stephen O'BRIEN, Bernard STENSON, Shane GEARY, William Allan LANE, Michael COLN, Mark Daniel de Leon ALEA
  • Patent number: 11740226
    Abstract: Embodiments of the disclosure provide various nanogap sensor designs (e.g., horizontal nanogap sensors, vertical nanogap sensors, arrays of multiple nanogap sensors, various arrangements for making electrical connections to the electrodes of nanogap sensors, etc.), as well as various methods which may be used to fabricate at least some of the proposed sensors. The nanogap sensors proposed herein may operate as molecular sensors to help identify chemical species through electrical measurements using at least a pair of electrodes separated by a nanogap.
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: August 29, 2023
    Assignee: ANALOG DEVICES INTERNATIONAL UNLIMITED COMPANY
    Inventors: Christophe Antoine, Himanshu Jain, Matthew Thomas Canty, Christina B. McLoughlin, Daniel Joseph Lucey, Sinead Maire McDermott, Stephen O'Brien, Bernard Stenson, Shane Geary, William Allan Lane, Michael Coln, Mark De Leon Alea
  • Publication number: 20220146449
    Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.
    Type: Application
    Filed: January 26, 2022
    Publication date: May 12, 2022
    Inventors: Alfonso Berduque, Helen Berney, William Allan Lane, Raymond J. Speer, Brendan Cawley, Donal McAuliffe, Patrick Martin McGuinness
  • Publication number: 20220126300
    Abstract: The present disclosure relates to a microfabricated thermal platform. The platform is formed over a substrate, which may for example be a silicon wafer, and which may form part of the platform. The substrate is coated in a thermally-insulating material, which may be an organic polymer such, as polyimide or SU8. The thermally-insulating material may have a predetermined thermal conductivity, which is dependent on thickness, geometry and processing. The surface of the thermally-insulating material may include an arrangement of thermal sites, with each site having a reaction plate (or thermal plate) over which chemical reactions may occur. A heating element may be positioned beneath each reaction plate. The thermal platform may have a plurality of such thermal sites arranged over the upper surface of the thermally-insulating material. However, it will be appreciated that in practice, there could be a single thermal site.
    Type: Application
    Filed: June 22, 2020
    Publication date: April 28, 2022
    Inventors: Christophe Antoine, Helen Berney, Bernard Stenson, Ramji Sitaraman Lakshmana, William Allan Lane, Himanshu Jain, Christina B. McLoughlin, Shane Geary, Michael C.W. Coln, Donal McAuliffe
  • Patent number: 11268927
    Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: March 8, 2022
    Assignee: Analog Devices International Unlimited Company
    Inventors: Alfonso Berduque, Helen Berney, William Allan Lane, Raymond J. Speer, Brendan Cawley, Donal McAuliffe, Patrick Martin McGuinness
  • Publication number: 20200256842
    Abstract: Embodiments of the disclosure provide various nanogap sensor designs (e.g., horizontal nanogap sensors, vertical nanogap sensors, arrays of multiple nanogap sensors, various arrangements for making electrical connections to the electrodes of nanogap sensors, etc.), as well as various methods which may be used to fabricate at least some of the proposed sensors. The nanogap sensors proposed herein may operate as molecular sensors to help identify chemical species through electrical measurements using at least a pair of electrodes separated by a nanogap.
    Type: Application
    Filed: October 8, 2018
    Publication date: August 13, 2020
    Applicant: Analog Devices Global Unlimited Company
    Inventors: Christophe ANTOINE, Himanshu JAIN, Matthew Thomas CANTY, Christina B. McLOUGHLIN, Daniel Joseph LUCEY, Sinead Maire McDERMOTT, Stephen O'BRIEN, Bernard STENSON, Shane GEARY, William Allan LANE, Michael COLN, Mark De Leon ALEA
  • Patent number: 10620151
    Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: April 14, 2020
    Assignee: Analog Devices Global
    Inventors: Alfonso Berduque, Helen Berney, William Allan Lane, Raymond J. Speer, Brendan Cawley, Donal Mcauliffe, Patrick Martin McGuinness
  • Patent number: 10597286
    Abstract: A monolithic vapor chamber heat dissipating device uses a phase change liquid and one or more wicks to dissipate heat from a heat-generating system. The phase change liquid and one or more wicks may be directly coupled to the heat-generating system, or may be coupled to an intermediate evaporator substrate. The phase change liquid vaporizes as it absorbs heat from the heat-generating system. When the vapor rises and encounters a condenser substrate, the vapor condenses and transfers the heat to the condenser substrate. The condensed vapor is drawn by gravity and the one or more wicks to the phase change liquid coupled to the heat-generating system.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: March 24, 2020
    Assignee: Analog Devices Global
    Inventors: Baoxing Chen, William Allan Lane, Marc T. Dunham
  • Patent number: 10468484
    Abstract: A modified bipolar transistor is provided which can provide improved gain, Early voltage, breakdown voltage and linearity over a finite range of collector voltages. It is known that the gain of a transistor can change with collector voltage. This document teaches a way of reducing this variation by providing structures for the depletion regions with the device to preferentially deplete with. As a result the transistor's response can be made more linear.
    Type: Grant
    Filed: May 21, 2014
    Date of Patent: November 5, 2019
    Assignee: Analog Devices Global
    Inventors: Edward John Coyne, William Allan Lane, Seamus P. Whiston
  • Publication number: 20190195825
    Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.
    Type: Application
    Filed: August 29, 2017
    Publication date: June 27, 2019
    Applicant: ANALOG DEVICES GLOBAL
    Inventors: Alfonso Berduque, Helen Berney, William Allan Lane, Raymond J. Speer, Brendan Cawley, Donal McAuliffe, Patrick Martin McGuinness
  • Patent number: 10288582
    Abstract: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.
    Type: Grant
    Filed: January 12, 2016
    Date of Patent: May 14, 2019
    Assignee: Analog Devices Global
    Inventors: Helen Berney, William Allan Lane, Patrick Martin McGuinness, Thomas G. O'Dwyer
  • Patent number: 10224474
    Abstract: An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer that are connected in series while alternating between the p-type and the n-type thermoelectric elements. The integrated circuit may include first and second substrates each having formed thereon a plurality of thermoelectric legs of a respective type of thermoelectric material. The first and second thermoelectric substrates also may have respective conductors, each coupled to a base of an associated thermoelectric leg and forming a mounting pad for coupling to a thermoelectric leg of the counterpart substrate.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: March 5, 2019
    Assignee: Analog Devices, Inc.
    Inventors: Jane Cornett, Baoxing Chen, William Allan Lane, Patrick M. McGuinness, Helen Berney
  • Publication number: 20190039883
    Abstract: A monolithic vapor chamber heat dissipating device uses a phase change liquid and one or more wicks to dissipate heat from a heat-generating system. The phase change liquid and one or more wicks may be directly coupled to the heat-generating system, or may be coupled to an intermediate evaporator substrate. The phase change liquid vaporizes as it absorbs heat from the heat-generating system. When the vapor rises and encounters a condenser substrate, the vapor condenses and transfers the heat to the condenser substrate. The condensed vapor is drawn by gravity and the one or more wicks to the phase change liquid coupled to the heat-generating system.
    Type: Application
    Filed: August 1, 2017
    Publication date: February 7, 2019
    Applicant: Analog Devices Global
    Inventors: Baoxing Chen, William Allan Lane, Marc T. Dunham
  • Patent number: 10148263
    Abstract: A combined isolator and power switch is disclosed. Such devices are useful in isolating low voltage components such as control compilers from motors or generators working at high voltages. The combined isolator and power switch includes circuits to transfer internal power from its low voltage side to the switch driver circuits on the high voltage side. The combined isolator and switch is compact and easy to use.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: December 4, 2018
    Assignee: Analog Devices Global Unlimited Company
    Inventors: Edward John Coyne, Patrick Martin McGuinness, William Allan Lane, Laurence O'Sullivan
  • Patent number: 10043792
    Abstract: An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device.
    Type: Grant
    Filed: November 8, 2016
    Date of Patent: August 7, 2018
    Assignee: Analog Devices, Inc.
    Inventors: Edward John Coyne, Patrick Martin McGuinness, Paul Malachy Daly, Bernard Patrick Stenson, David J. Clarke, Andrew David Bain, William Allan Lane
  • Patent number: 9960336
    Abstract: An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer that are connected in series while alternating between the p-type and the n-type thermoelectric elements. The integrated circuit may include first and second substrates each having formed thereon a plurality of thermoelectric legs of a respective type of thermoelectric material. The first and second thermoelectric substrates also may have respective conductors, each coupled to a base of an associated thermoelectric leg and forming a mounting pad for coupling to a thermoelectric leg of the counterpart substrate.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: May 1, 2018
    Assignee: Analog Devices, Inc.
    Inventors: Jane Cornett, Baoxing Chen, William Allan Lane, Patrick M. McGuinness, Helen Berney
  • Publication number: 20180059044
    Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.
    Type: Application
    Filed: August 30, 2016
    Publication date: March 1, 2018
    Inventors: Alfonso Berduque, Helen Berney, William Allan Lane, Raymond J. Speer, Brendan Cawley, Donal Mcauliffe, Patrick Martin McGuinness
  • Publication number: 20170279444
    Abstract: A combined isolator and power switch is disclosed. Such devices are useful in isolating low voltage components such as control compilers from motors or generators working at high voltages. The combined isolator and power switch includes circuits to transfer internal power from its low voltage side to the switch driver circuits on the high voltage side. The combined isolator and switch is compact and easy to use.
    Type: Application
    Filed: July 21, 2016
    Publication date: September 28, 2017
    Inventors: Edward John Coyne, Patrick Martin McGuinness, William Allan Lane, Lawrence O'Sullivan
  • Patent number: 9748466
    Abstract: An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer. The p-type thermoelectric elements and the n-type thermoelectric elements may be connected in series while alternating between the p-type and the n-type thermoelectric elements.
    Type: Grant
    Filed: May 9, 2014
    Date of Patent: August 29, 2017
    Assignee: Analog Devices, Inc.
    Inventors: Baoxing Chen, Patrick M. McGuinness, William Allan Lane, Jane Cornett
  • Publication number: 20170199148
    Abstract: An integrated ion-sensitive probe is provided. In an example, an ion-sensitive probe can include a semiconductor substrate and a first passive electrode attached to the semiconductor substrate. The first passive electrode can be configured to contact a solution and to provide a first electrical voltage as function of a concentration of an ion within the solution. In certain examples, a passive reference electrode can be co-located on the semiconductor substrate. In some examples, processing electronics can be integrated on the semiconductor substrate.
    Type: Application
    Filed: January 12, 2016
    Publication date: July 13, 2017
    Inventors: Helen Berney, William Allan Lane, Patrick Martin McGuinness, Thomas G. O'Dwyer