Abstract: A substrate support assembly and method for controlling the temperature of a substrate within a process chamber with a temperature uniformity of +/?5° C. are provided. A substrate support assembly includes a thermally conductive body comprising an aluminum material, a substrate support surface on the surface of the thermally conductive body and adapted to support the large area glass substrate thereon, one or more heating elements embedded within the thermally conductive body, and one or more cooling channels embedded within the thermally conductive body and positioned around the one or more heating elements. A process chamber comprising the substrate support assembly of the invention is also provided.

Abstract: A temperature sensor for use in an infrared detector the temperature sensor comprising: a first resistor associated with a first thermal path having a first thermal conductivity between the first resistor and a substrate and a first temperature coefficient of resistance; a second resistor associated with a second thermal path having a second thermal conductivity between the second resistor and the substrate and a second temperature coefficient of resistance, and a measurement circuit responsive to changes in the resistance of the first and second resistors to estimate changes in temperature, and wherein at least one of (a) the first and second thermal conductivities are different or (b) the first and second temperature coefficients of resistance are different.

Abstract: An infrared sensor, comprising at least one pixel comprising a first sensor and a second sensor, wherein the first and second sensors are dissimilar.

Abstract: A few mode optical fiber comprising: a Ge-free core having an effective area Aeff of LP01 mode wherein 120 ?m2<Aeff<1000 ?m2 at 1550 nm, and a refractive index profile selected such that the core is capable of supporting the propagation and transmission of an optical signal with X number of LP modes at 1550 nm, X is an integer and 1<X?20, maximum refractive index delta of the core, ?0, wherein ?0.5%??0?0.08%; and, an annular cladding surrounding the core having a low index ring with a minimum refractive index delta ?rMIN, ?rMIN<?0 and ?rMIN??0.3 relative to pure SiO2, an outer cladding with a refractive index delta ?Outer-Clad, such that ?Outer-Clad>?rMIN; and |?0??Outer-Clad|>0.05%, the relative refractive index profile of the optical fiber is selected to provide attenuation of <0.18 dB/km at the 1550 nm, and LP11 cut off wavelength >1600 nm.

Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

Abstract: The disclosure relates to the use of culture media containing thyroid hormones or analogs thereof, and includes methods and uses thereof for embryo culture, embryo production, embryo maturation, improved survival of embryos and improved viability of embryos post cryopreservation.

Abstract: Transistors having improved breakdown voltages and methods of forming the same are provided herein. In one embodiment, a method of forming a transistor comprises the steps of: forming a drain and a source by doping a semiconductor with a first dopant type to form a first type of semiconductor, the drain and source being separated from one another, wherein the drain comprises a first drain region of a first dopant concentration adjacent a second drain region, such that at least a portion of the second drain region is positioned between the first drain region and the source, and further comprising forming an intermediate region by doping the semiconductor so as to form a second type of semiconductor intermediate the drain and source, the intermediate region spaced apart from the second drain region.

Abstract: A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.

Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.

Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

Abstract: A method of making fabrics and coatings in a camouflage pattern with a printed camouflage pattern ink layer covered by a temperature activated colour changing ink layer or layers printed in a camouflage pattern, which matches the pattern in the underlying printed camouflage fabric ink layer. The temperature activated colour changing ink layer changes colour state with a change of temperature to another colour state or a clear state, which reveals the colour state of the underlying printed camouflage fabric layer. The temperatures at which the temperature activated colour changing ink changes colour state occurs at a pre-determined temperature so that the camouflage pattern reveal the colour states and the characteristics of the foliage of the season to which the temperature corresponds.

Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.

Abstract: A fishing lure comprises a hook structure including a hook portion for engaging the mouth flesh of a fish, a shank portion connected to the hook portion, and a line securing portion for securing a line to the hook structure. The line securing portion forms an unsecured loop so that a portion of fishing line is movable into the eye of the loop without threading. The lure also comprises a body structure mounted on the hook structure. The body structure has an anchor notch formed thereon and configured to receiving a portion of a looped fishing line.

Abstract: A method for the determination of the amount of cholesterol in a sample is provided. The method typically provides a breakdown of the HDL and LDL cholesterol contents of the sample.

Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.

Abstract: A pedal simulator includes a cylinder mechanism for absorbing a fluid pressure generated in a pressurization chamber of a master cylinder by operating a brake pedal. The cylinder mechanism includes a housing, a piston slidably held in the housing and defining a fluid chamber for introducing a working fluid thereinto, and a plurality of spring members for urging the piston toward the fluid chamber. The housing includes an open end on an opposite side of the housing from the piston, and a lid member which covers the open end. The lid member is composed of a member separate and distinct from the housing. The lid member is provided with a damper made of a rubber member.

Abstract: Transistors having improved breakdown voltages and methods of forming the same are provided herein. In one embodiment, a method of forming a transistor comprises the steps of: forming a drain and a source by doping a semiconductor with a first dopant type to form a first type of semiconductor, the drain and source being separated from one another, wherein the drain comprises a first drain region of a first dopant concentration adjacent a second drain region, such that at least a portion of the second drain region is positioned between the first drain region and the source, and further comprising forming an intermediate region by doping the semiconductor so as to form a second type of semiconductor intermediate the drain and source, the intermediate region spaced apart from the second drain region.

Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.