Abstract: A cleaving apparatus, system and method which inhibit damage to cleave edges of laser bars are described. The cleaving apparatus includes a cleaving device having a first and a second slope meeting at a solitary cleave line. The slopes are angled to provide a solitary cleave point at the cleave line. Preferably, the first slope is between zero and four degrees and the second slope is about twenty degrees above a support structure upon which the cleaving device is mounted. A source of air may optionally provide air directed at the cleave line to assist in cleaving the laser bars.

Abstract: An apparatus is provided for cleaving a laser bar into semiconductor chips. The apparatus includes a supporting structure on which a member slides. The apparatus also includes a pair of film layers. The laser bar is positioned between the film layers. A chamber is sealed to the top film layer. The chamber has an inlet through which gas is input. The movement of the member and the downward force caused by the buildup of gas pressure in the chamber induce cleaving of the laser bar at predetermined locations. The laser bar may have score marks at the predetermined locations to produce weak points. Pressure pulses may be coordinated with the movement of the member to break the laser bar at the desired locations.

Abstract: An apparatus and method for performing tests on laser chips that are not labor intensive and will not result in wasted parts should the laser chip fail the test is disclosed. A “bare” laser chip is subjected to a test in accordance with one embodiment by placing the laser chip on an insulating material with an embedded conducting contact through which the current to power the laser chip is passed. A cover plate provides a channel around the laser chip through which a jet of high pressure inert gas is passed to dissipate the self-heating of the laser chip that occurs during the test process. The laser chip is kept in place by physical pressure. In accordance with another embodiment, the temperature of the laser chip is measured and a thermoelectric cooler is used to cool the laser chip. The test on the “bare” laser chip eliminates the need to solder bond the laser chip to a carrier and attach wire bonds to the laser chip, thus reducing associated labor and parts costs.

Abstract: A system for adhering a plurality of parts to a support film is provided. The parts are positioned between a support base with a heater and a cover membrane. The cover membrane is located beneath a sealed chamber. The chamber has an inlet through which gas is input. A downward force caused by gas pressure in the chamber causes the cover membrane to contact the parts and presses the plurality of parts against the film. A heating device heats the film to cause the parts to adhere to the film.

Abstract: An apparatus and a method for non-contact cleaving a brittle, non-metallic solid material, such as semiconductor material, glass, quartz, ceramic or like material. A pulsating gas jet directs a jet of gas toward a support structure formed of a non-compliant material. The semiconductor material is positioned on the support structure between a pair of film layers. The semiconductor material is scored in at least one location on the material. A plastic buffer material is adhered to the support structure. The semiconductor material and the film layers are moved along the support structure until the score line is at a ledge of the support structure and underneath the source of gas. The jet of gas applies a sufficient force to cleave the semiconductor material as it passes off the ledge of the support structure, while minimizing vibration and/or turbulence. The buffer provides cushioning and inhibits the formation of fractures during the cleaving process.

Abstract: A method and apparatus are provided for automated cleaving of semiconductor laser bars into laser devices. The structures to be cleaved are sandwiched between two sheets of plastic film and, while supported on a stabilizing surface, are transported between the sheets in a direction perpendicular to scribe marks defining the sides of the laser devices. At one point, the film sheets with the structures between them pass over a raised breaker assembly on the stabilizing surface. A high pressure air source above the breaker assembly provides a blast of air towards each film sheet enclosed structure as it passes over the breaker assembly. This causes the structure to fracture or cleave along the scribe line. As the film sheet pass over the breaker assembly, the structure is cleaved at each successive scribe line. Thus, downstream of the breaker assembly, there are provided a series of separated devices between the two film sheets.

Abstract: A method of forming and growing a single crystal of a semiconductor compound comprising a Group II-VI or Group III-V compound is disclosed. The method comprises placing a single crystal seed of the semiconductor compound adjacent to a first reactant comprising a Group II or Group III element. A protective blanket, resulting from at least a second reactant of a Group VI or Group V element, is formed over the seed within a temperature zone to protect the seed from dissolution by the first reactant. The reactants are combined to form a melt at a first temperature within the temperature zone and to grow a single crystal from the melt on the seed at a second temperature within the temperature zone.

Abstract: A high-temperature reaction method is disclosed. The method comprises coupling an inductive heating coil to the contents of a reaction vessel, containing at least one conductive reactant with a coupling efficiency that is different than the coupling efficiency between the coil and the contents of the reaction vessel at the completion of the reaction. An alternating voltage is developed across the coil and the current flowing in the coil is monitored. Typically, the monitored current increases as the reaction proceeds until the reaction is completed whereupon a constant current value is obtained.