Patents by Inventor William Arthur Stanton

William Arthur Stanton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Inverted variable resistance memory cell and method of making the same
    Patent number: 8263962
    Abstract: An inverted variable resistance memory cell and a method of fabricating the same. The memory cell is fabricated by forming an opening in an insulating layer deposited over a semiconductor substrate, etching the top portion of the opening to have a substantially hemispherical-shape, forming a metal layer in the opening, and overlying a variable resistance material over the metal layer.
    Type: Grant
    Filed: April 9, 2010
    Date of Patent: September 11, 2012
    Assignee: Micron Technology, Inc.
    Inventor: William Arthur Stanton
  • INVERTED VARIABLE RESISTANCE MEMORY CELL AND METHOD OF MAKING THE SAME
    Publication number: 20100193765
    Abstract: An inverted variable resistance memory cell and a method of fabricating the same. The memory cell is fabricated by forming an opening in an insulating layer deposited over a semiconductor substrate, etching the top portion of the opening to have a substantially hemispherical-shape, forming a metal layer in the opening, and overlying a variable resistance material over the metal layer.
    Type: Application
    Filed: April 9, 2010
    Publication date: August 5, 2010
    Inventor: William Arthur Stanton
  • Inverted variable resistance memory cell and method of making the same
    Patent number: 7718533
    Abstract: An inverted variable resistance memory cell and a method of fabricating the same. The memory cell is fabricated by forming an opening in an insulating layer deposited over a semiconductor substrate, etching the top portion of the opening to have a substantially hemispherical-shape, forming a metal layer in the opening, and overlying a variable resistance material over the metal layer.
    Type: Grant
    Filed: May 8, 2007
    Date of Patent: May 18, 2010
    Assignee: Micron Technology, Inc.
    Inventor: William Arthur Stanton
  • Inverted variable resistance memory cell and method of making the same
    Publication number: 20080277641
    Abstract: An inverted variable resistance memory cell and a method of fabricating the same. The memory cell is fabricated by forming an opening in an insulating layer deposited over a semiconductor substrate, etching the top portion of the opening to have a substantially hemispherical-shape, forming a metal layer in the opening, and overlying a variable resistance material over the metal layer.
    Type: Application
    Filed: May 8, 2007
    Publication date: November 13, 2008
    Inventor: William Arthur Stanton