Abstract: A method involves determining failure in time rate for a circuit. The method may include obtaining circuit data regarding a circuit. The circuit may include a first wire segment and a second wire segment. The method may further include obtaining reliability data. The reliability data may describe a failure of the circuit over a pre-determined time period. The method may further include obtaining a thermal map. The method may further include determining a first failure rate for the first wire segment of the circuit. The first failure rate may be a probability that the first wire segment fails in a predetermined amount of time. The method may further include determining a second failure rate for the second wire segment of the circuit. The method may further include generating a model of the circuit. The model of the circuit may describe the first and the second failure rate of the circuit.

Abstract: A method involves determining failure in time rate for a circuit. The method may include obtaining circuit data regarding a circuit. The circuit may include a first wire segment and a second wire segment. The method may further include obtaining reliability data. The reliability data may describe a failure of the circuit over a pre-determined time period. The method may further include obtaining a thermal map. The method may further include determining a first failure rate for the first wire segment of the circuit. The first failure rate may be a probability that the first wire segment fails in a predetermined amount of time. The method may further include determining a second failure rate for the second wire segment of the circuit. The method may further include generating a model of the circuit. The model of the circuit may describe the first and the second failure rate of the circuit.

Abstract: A method involves determining failure in time rate for a circuit. The method may include obtaining circuit data regarding a circuit. The circuit may include a first wire segment and a second wire segment. The method may further include obtaining reliability data. The reliability data may describe a failure of the circuit over a pre-determined time period. The method may further include obtaining a thermal map. The method may further include determining a first failure rate for the first wire segment of the circuit. The first failure rate may be a probability that the first wire segment fails in a predetermined amount of time. The method may further include determining a second failure rate for the second wire segment of the circuit. The method may further include generating a model of the circuit. The model of the circuit may describe the first and the second failure rate of the circuit.

Abstract: A method for modeling electrostatic discharges. The method may include obtaining a circuit netlist for an integrated circuit. The circuit netlist may describe connection information for various electronic components within the integrated circuit. The method may further include obtaining, by removing a portion of the electronic components from the circuit netlist, a reduced netlist. The method may further include determining, using the reduced netlist, various circuit parameters regarding an electrostatic discharge event for the integrated circuit. The method may further include simulating, using the circuit parameters, a discharge path within the integrated circuit for the electrostatic discharge event.

Abstract: A method involves determining failure in time rate for a circuit. The method may include obtaining circuit data regarding a circuit. The circuit may include a first wire segment and a second wire segment. The method may further include obtaining reliability data. The reliability data may describe a failure of the circuit over a pre-determined time period. The method may further include obtaining a thermal map. The method may further include determining a first failure rate for the first wire segment of the circuit. The first failure rate may be a probability that the first wire segment fails in a predetermined amount of time. The method may further include determining a second failure rate for the second wire segment of the circuit. The method may further include generating a model of the circuit. The model of the circuit may describe the first and the second failure rate of the circuit.

Abstract: A method for modeling electrostatic discharges. The method may include obtaining a circuit netlist for an integrated circuit. The circuit netlist may describe connection information for various electronic components within the integrated circuit. The method may further include obtaining, by removing a portion of the electronic components from the circuit netlist, a reduced netlist. The method may further include determining, using the reduced netlist, various circuit parameters regarding an electrostatic discharge event for the integrated circuit. The method may further include simulating, using the circuit parameters, a discharge path within the integrated circuit for the electrostatic discharge event.

Abstract: A method for calculating voltage values in a power grid, including: obtaining a primary circuit representation (PCR) corresponding to the power grid and including: multiple nodes separated by multiple impedances; and an independent source connected to one node; identifying a high degree node; obtaining a modified circuit representation (MCR) by connecting, in the PCR, an auxiliary voltage source having an auxiliary voltage value to the high degree node, the MCR including a modified characteristic matrix and a modified source vector; calculating a modified state vector based on the modified characteristic matrix and the modified source vector; generating an admittance matrix based on the multiple impedances and the auxiliary voltage; obtaining an auxiliary voltage adjustment value using the admittance matrix; obtaining a primary state vector by adjusting the modified state vector using the admittance matrix and the auxiliary voltage adjustment value; and obtaining the voltage values from the primary state vect

Abstract: A system that simulates an integrated circuit is formed of a plurality of devices. The system initially performs a fundamental circuit simulation run using original parameters for the plurality of devices and an initial time step. The system generates one or more fundamental time steps from the fundamental circuit simulation run. The fundamental time steps are generated when changes that indicate state time derivatives during two or more successive integration steps are within a predetermined range. The system stores the one or more fundamental time steps as fundamental circuit events in an events queue, and updates the parameters for the plurality of devices based on the fundamental circuit events to generate one or more derivative circuits. The system then performs one or more derivative circuit simulation runs using the derivative circuits.

Abstract: A system that simulates an integrated circuit is formed of a plurality of devices. The system initially performs a fundamental circuit simulation run using original parameters for the plurality of devices and an initial time step. The system generates one or more fundamental time steps from the fundamental circuit simulation run. The fundamental time steps are generated when changes that indicate state time derivatives during two or more successive integration steps are within a predetermined range. The system stores the one or more fundamental time steps as fundamental circuit events in an events queue, and updates the parameters for the plurality of devices based on the fundamental circuit events to generate one or more derivative circuits. The system then performs one or more derivative circuit simulation runs using the derivative circuits.

Abstract: A method for a power grid configured to supply current to a plurality of elements of a circuit.

Abstract: A method for a power grid configured to supply current to a plurality of elements of a circuit.

Abstract: Method and system for determining electrical isomorphism between two electrical networks are disclosed. In one embodiment, the method includes representing the circuit as a hierarchically-arranged set of branches. The hierarchically-arranged set of branches including a first branch that includes a first electrical network and a second branch that includes a second electrical network, where the first and second branches are interconnected in the graph through a third branch at a higher hierarchical level in the graph than the first and second branches. Next, the method determines whether the first and second electrical networks are electrically isomorphic networks. If the first and second electrical networks are determined to be electrically isomorphic networks, the first and second electrical networks are represented with a single electrically isomorphic network. The method further includes simulating the first and second electrical networks using the single electrically isomorphic network.

Abstract: A subtractive suppression hybridization (SSH) assay and uses thereof are described. In particular, methods of identifying and isolating nucleic acid sequences, which are unique for a certain cell, tissue or organism are provided, wherein said unique nucleid acid sequences are related to for example diseases genes. More specifically, SSH assays for unique genomic DNA sequences and improved SSH assays that are combined with 2D gel electrophoresis techniques are provided. The presented methods are particular useful for the identification of genes involved in the development of various diseases, including cancer, hypertension and diabetes as well as for monitoring animals and food, for example for infection agents and other contaminants.

Abstract: A programmable device is formed from a field-effect transistor. Specifically, the present invention generally related to integrated circuit (IC) structures and more particularly, to an improved antifuse structure for use in programming redundant and customizable IC chips. The anti-fuse is NFET made of MOS material and formed at a face of a semiconductor layer having an n-type doped source, and drain region, and a p-type doped channel region separating the source and drain regions. The device is programmed by applying a high voltage to the NFET drain to form a hot spot located along the channel width of the drain and thereby forming a bridge, which now has less resistance than the surrounding channel material, to the NFET source.

Abstract: A programmable device is formed from a field-effect transistor. Specifically, the present invention generally related to integrated circuit (IC) structures and more particularly, to an improved antifuse structure for use in programming redundant and customizable IC chips. The anti-fuse is NFET made of MOS material and formed at a face of a semiconductor layer having an n-type doped source, and drain region, and a p-type doped channel region separating the source and drain regions. The device is programmed by applying a high voltage to the NFET drain to form a hot spot located along the channel width of the drain and thereby forming a bridge, which now has less resistance than the surrounding channel material, to the NFET source.