Patents by Inventor William B. Gist, III

William B. Gist, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8570090
    Abstract: Electronic component protection power supply clamp circuits comprising a plurality of p-type channel metal-oxide-semiconductor (PMOS) and n-type channel metal-oxide-semiconductor (NMOS) transistors are described. These clamp circuits use a feedback latching circuit to retain an electrostatic discharge (ESD)-triggered state and efficiently conduct ESD current that has been diverted into the power supply, in order to dissipate ESD energy. The feedback latching circuit also maintains a clamp transistor in its off state if the clamp circuit powers up untriggered, thus enhancing the clamp circuit's immunity to noise during normal operation. Passive resistance initialization of key nodes to an untriggered state, as well as passive resistance gate input loading of a large ESD clamping transistor, further enhances the clamp circuit's immunity to false triggering.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: October 29, 2013
    Assignee: Advanced Micro Devices, Inc.
    Inventors: William B. Gist, III, Warren Anderson
  • Patent number: 8390360
    Abstract: Electronic component protection power supply clamp circuits comprising a plurality of p-type channel metal-oxide-semiconductor (PMOS) and n-type channel metal-oxide-semiconductor (NMOS) transistors are described. These clamp circuits use a feedback latching circuit to retain an electrostatic discharge (ESD)-triggered state and efficiently conduct ESD current that has been diverted into the power supply, in order to dissipate ESD energy. The feedback latching circuit also maintains a clamp transistor in its off state if the clamp circuit powers up untriggered, thus enhancing the clamp circuit's immunity to noise during normal operation. Passive resistance initialization of key nodes to an untriggered state, as well as passive resistance gate input loading of a large ESD clamping transistor, further enhances the clamp circuit's immunity to false triggering.
    Type: Grant
    Filed: January 12, 2011
    Date of Patent: March 5, 2013
    Assignee: Advanced Micro Devices, Inc.
    Inventors: William B. Gist, III, Warren R. Anderson
  • Publication number: 20120180008
    Abstract: Electronic component protection power supply clamp circuits comprising a plurality of p-type channel metal-oxide-semiconductor (PMOS) and n-type channel metal-oxide-semiconductor (NMOS) transistors are described. These clamp circuits use a feedback latching circuit to retain an electrostatic discharge (ESD)-triggered state and efficiently conduct ESD current that has been diverted into the power supply, in order to dissipate ESD energy. The feedback latching circuit also maintains a clamp transistor in its off state if the clamp circuit powers up untriggered, thus enhancing the clamp circuit's immunity to noise during normal operation. Passive resistance initialization of key nodes to an untriggered state, as well as passive resistance gate input loading of a large ESD clamping transistor, further enhances the clamp circuit's immunity to false triggering.
    Type: Application
    Filed: January 12, 2011
    Publication date: July 12, 2012
    Applicant: ADVANCED MICRO DEVICES, INC.
    Inventors: William B. Gist, III, Warren R. Anderson