Abstract: A substrate processing apparatus comprises a processing chamber and a gas supply portion configured in an upper portion of the processing chamber, for supplying the processing gas into the processing chamber. A plurality of substrate holding portions are configured in the processing chamber and located below the gas supply portion, for holding substrates. An exhaust portion is configured in a lower portion of the processing chamber, for exhausting gas from the processing chamber. The exhaust portion comprises a plurality of exhaust grooves, a plurality of exhaust flow channels and a shared main exhaust port. Each exhaust groove is configured with a substrate holding portion and two exhaust flow channels, to connect the exhaust groove to the main exhaust port. Wherein, the main exhaust port is located at a geometric center of a plurality of substrate holding portions, and the plurality of exhaust flow channels have the same exhaust volume.

Abstract: A gas supply apparatus and a substrate processing apparatus including the same are provided. The gas supply apparatus supplies a plurality groups of process gas to a substrate processing apparatus of which a plurality of wafers are placed in the inside. The gas supply apparatus includes a plurality of process gas supply units configured to supply the plurality groups of process gas; a process gas temporary reservoir including an inner space partitioned into a plurality of gas storage spaces isolated from each other, each of which configured to store one group of process gas supplied from one process gas supply unit and simultaneously supply the one group of process gas to the plurality of wafers.

Abstract: Disclosed is a film deposition device, having a substrate supporting component and comprising: a central shaft and a supporting base set on the top of the central shaft; a rotary shaft and a supporting ring set on the top of the rotary shaft, wherein the supporting ring is arranged around the supporting base, and the supporting base and the supporting ring are used for supporting a central area and an peripheral area of a substrate respectively; a first actuator connected to the rotary shaft for driving the supporting ring to rotate; a second actuator for driving the supporting ring and the supporting base to move relatively in a vertical direction; and a buffer portion for performing buffering when the substrate comes into contact with the supporting ring.

Abstract: Disclosed in the invention is a thin film deposition a device, comprising: a processing chamber; a gas supply assembly, which is arranged on the top wall of the processing chamber; a heating tray, which is arranged below the gas supply assembly for bearing and heating the substrate; a radio frequency source; and a rotating mechanism configured to control the rotation of the substrate, or the rotation of the heating tray, or control the synchronous rotation of the substrate and the heating tray, wherein the rotation shaft for rotation is perpendicular to and passing through the substrate. The radio frequency source is kept in an on state during rotation.